Abstract: A method of improving selectivity of a metal in a selective deposition process. A pre-treatment process for the metal modifies the metal surface, and includes first reducing the metal to remove organic contamination from the metal followed by oxidation of the metal to allow a monolayer of a metal oxide to grow on the surface. This modification of the metal allows inhibitor molecules to adsorb on the metal oxide monolayer to improve selectivity.

Abstract: Methods and apparatuses for selectively depositing silicon oxide on a silicon oxide surface relative to a silicon nitride surface are described herein. Methods involve pre-treating a substrate surface using ammonia and/or nitrogen plasma and selectively depositing silicon oxide on a silicon oxide surface using alternating pulses of an aminosilane silicon precursor and an oxidizing agent in a thermal atomic layer deposition reaction without depositing silicon oxide on an exposed silicon nitride surface.

Abstract: Methods are provided for conducting a deposition on a semiconductor substrate by selectively depositing a material on the substrate. The substrate has a plurality of substrate materials, each with a different nucleation delay corresponding to the material deposited thereon. Specifically, the nucleation delay associated with a first substrate material on which deposition is intended is less than the nucleation delay associated with a second substrate material on which deposition is not intended according to a nucleation delay differential, which degrades as deposition proceeds. A portion of the deposited material is etched to reestablish the nucleation delay differential between the first and the second substrate materials. The material is further selectively deposited on the substrate.

Abstract: A method is provided, including the following operations: simultaneously applying an organosilyl chloride inhibitor and a Lewis base to a surface of a substrate, the organosilyl chloride inhibitor being configured to adsorb onto dielectric regions of the surface of the substrate; performing a plurality of cycles of an ALD process to deposit a metal oxide onto the surface of the substrate; wherein the applying of the organosilyl chloride inhibitor and the Lewis base prevents the ALD process from depositing the metal oxide onto the dielectric regions of the surface of the substrate.

Abstract: Methods are provided for conducting a deposition on a semiconductor substrate by selectively depositing a material on the substrate. The substrate has a plurality of substrate materials, each with a different nucleation delay corresponding to the material deposited thereon. Specifically, the nucleation delay associated with a first substrate material on which deposition is intended is less than the nucleation delay associated with a second substrate material on which deposition is not intended according to a nucleation delay differential, which degrades as deposition proceeds. A portion of the deposited material is etched to reestablish the nucleation delay differential between the first and the second substrate materials. The material is further selectively deposited on the substrate.

Abstract: A method of improving selectivity of a metal in a selective deposition process. A pre-treatment process for the metal modifies the metal surface, and includes first reducing the metal to remove organic contamination from the metal followed by oxidation of the metal to allow a monolayer of a metal oxide to grow on the surface. This modification of the metal allows inhibitor molecules to adsorb on the metal oxide monolayer to improve selectivity.

Abstract: The present inventors have conceived of a multi-stage process gas delivery system for use in a substrate processing apparatus. In certain implementations, a first process gas may first be delivered to a substrate in a substrate processing chamber. A second process gas may be delivered, at a later time, to the substrate to aid in the even dosing of the substrate. Delivery of the first process gas and the second process gas may cease at the same time or may cease at separate times.

Abstract: Methods and apparatuses for selectively growing metal-containing hard masks are provided herein. Methods include providing a substrate having a pattern of spaced apart features, each feature having a top horizontal surface, filling spaces between the spaced apart features with carbon-containing material to form a planar surface having the top horizontal surfaces of the features and carbon-containing material, selectively depositing a metal-containing hard mask on the top horizontal surfaces of the features relative to the carbon-containing material, and selectively removing the carbon-containing material relative to the metal-containing hard mask and features.

Abstract: Methods and apparatuses for selectively depositing silicon nitride on silicon surfaces relative to silicon oxide surfaces and selectively depositing silicon nitride on silicon oxide surfaces relative to silicon surfaces are provided herein. Methods involve blocking one surface while leaving another surface unblocked and selectively depositing silicon nitride on the unblocked surface. The blocked surface may include an organic moiety having an Si—C bond. The method may include blocking one of an exposed hydroxyl-terminated silicon-containing surface and an exposed hydrogen-terminated silicon-containing surface of the substrate. Apparatuses include a process chamber having a pedestal, an outlet, and a controller for providing instructions for causing delivery of a semiconductor substrate to the pedestal, causing introduction of a silicon-containing precursor and causing introduction of a nitrogen-containing reactant without igniting a plasma.

Abstract: Methods and apparatuses for selectively depositing silicon nitride on exposed surfaces of a substrate having hydroxyl end groups relative to exposed surfaces having S—H bonds are provided herein. Techniques involve providing a transition metal-containing reactant or a non-hydride aluminum-containing gas to the substrate to form a transition metal-containing or an aluminum-containing moiety on an exposed surface having hydroxyl end groups and selectively depositing silicon nitride on the surface using alternating pulses of an aminosilane and a hydrazine by thermal atomic layer deposition catalyzed by the transition metal-containing or aluminum-containing moiety on the exposed surface having hydroxyl end groups relative to an exposed surface having S—H bonds.

Abstract: Methods of and apparatuses for processing a metal oxide film are provided. Methods involve (a) exposing the metal oxide film to a boron halide reactant and igniting a first plasma with a first bias power to modify a surface of the metal oxide film, and (b) exposing the modified surface of the metal oxide film to a second plasma at a second bias power and for a duration sufficient to remove the modified surface without sputtering. Methods also involve (c) selectively depositing a metal oxide material on the metal oxide film to fill crevices within the metal oxide film.

Abstract: Methods and apparatuses for selectively depositing silicon oxide on a silicon oxide surface relative to a silicon nitride surface are described herein. Methods involve pre-treating a substrate surface using ammonia and/or nitrogen plasma and selectively depositing silicon oxide on a silicon oxide surface using alternating pulses of an aminosilane silicon precursor and an oxidizing agent in a thermal atomic layer deposition reaction without depositing silicon oxide on an exposed silicon nitride surface.

Abstract: It will be understood that in some embodiments, nitrogen-containing ligands bonded to the silicon may not necessarily be identical to another nitrogen-containing ligand bonded to the same silicon atom. For example, in some embodiments, R1 and R2 may be different alkyl ligands. In some embodiments, a first NR1R2 ligand attached to a silicon atom may not be the same as or have the same alkyl ligands as another NR1R2 ligand attached to the same silicon atom. As noted above, R1 and R2 may be any alkyl ligand.

Abstract: Provided are methods for the selective deposition of material on a sidewall surface of a patterned feature. In some embodiments, the methods involve providing a substrate having a feature recessed from a surface of the substrate. The feature has a bottom and a sidewall which extends from the bottom. A conformal film is deposited on the feature using an atomic layer deposition (ALD) process. The conformal film deposited on the bottom is modified by exposing the substrate to directional plasma such that the conformal film on the bottom is less dense than the conformal film on the sidewall. The modified conformal film deposited on the bottom of the feature is preferentially etched. Also provided are methods for the selective deposition on a horizontal surface of a patterned feature.

Abstract: The present inventors have conceived of a multi-stage process gas delivery system for use in a substrate processing apparatus. In certain implementations, a first process gas may first be delivered to a substrate in a substrate processing chamber. A second process gas may be delivered, at a later time, to the substrate to aid in the even dosing of the substrate. Delivery of the first process gas and the second process gas may cease at the same time or may cease at separate times.

Abstract: Methods and apparatuses for selectively depositing silicon-containing dielectric or metal-containing dielectric material on silicon or metal surfaces selective to silicon oxide or silicon nitride materials are provided herein. Methods involve exposing the substrate to an acyl chloride which is reactive with the silicon oxide or silicon nitride material where deposition is not desired to form a ketone structure that blocks deposition on the silicon oxide or silicon nitride material. Exposure to the acyl chloride is performed prior to deposition of the desired silicon-containing dielectric material or metal-containing dielectric material.

Abstract: Methods and apparatuses for selectively depositing silicon oxide on a silicon oxide surface relative to a silicon nitride surface are described herein. Methods involve pre-treating a substrate surface using ammonia and/or nitrogen plasma and selectively depositing silicon oxide on a silicon oxide surface using alternating pulses of an aminosilane silicon precursor and an oxidizing agent in a thermal atomic layer deposition reaction without depositing silicon oxide on an exposed silicon nitride surface.

Abstract: Efficient integrated sequential deposition of alternating layers of dielectric and conductor, for example oxide/metal or metal nitride, e.g., SiO2/TiN, in a single tool, and even in a single process chamber enhances throughput without compromising quality when directly depositing a OMOM stack with many layers. Conductor and dielectric film deposition of a stack of at least 20 conductor/dielectric film pairs in the same processing tool or chamber, without breaking vacuum between the film depositions, such that there is no substantial cross-contamination between the conductor and dielectric film depositions, can be achieved.

Abstract: Process and apparatus for forming a negative patterning mask in the context of EUV patterning uses a selective deposition process to deposit a metal oxide or metal nitride thin film in a feature defined in an EUV resist to prepare a negative image for patterning. The method to produce the “negative” image does not involve an etch back step and therefore accommodates the small resist budget. The material forming the “negative” image is significantly more etch resistant than resist which eliminates the need for an additional hard mask transfer layer.

Abstract: Methods are provided for conducting a deposition on a semiconductor substrate by selectively depositing a material on the substrate. The substrate has a plurality of substrate materials, each with a different nucleation delay corresponding to the material deposited thereon. Specifically, the nucleation delay associated with a first substrate material on which deposition is intended is less than the nucleation delay associated with a second substrate material on which deposition is not intended according to a nucleation delay differential, which degrades as deposition proceeds. A portion of the deposited material is etched to reestablish the nucleation delay differential between the first and the second substrate materials. The material is further selectively deposited on the substrate.