Abstract: A magnetoresistance device has an MgO (magnesium oxide) layer provided between a first ferromagnetic layer and a second ferromagnetic layer. The device is manufactured by forming a film of the MgO layer in a film forming chamber. A substance whose getter effect with respect to an oxidizing gas is large is adhered to surfaces of components provided in the chamber for forming the MgO layer. The substance having a large getter effect is a substance whose value of oxygen gas adsorption energy is 145 kcal/mol or higher. Ta (tantalum), in particular, is preferable as a substance which constitutes the magnetoresistance device.

Abstract: The present invention provides a substrate processing apparatus capable of suppressing mutual contamination and/or damage of the insides of ion beam generators arranged opposite each other via a substrate, and a magnetic recording medium manufacturing method. A substrate processing apparatus according to an embodiment of the present invention includes a first ion beam generator that applies an ion beam to one surface to be processed of a substrate, and a second ion beam generator that applies an ion beam to another surface to be processed, which are arranged opposite each other via the substrate, and a first grid in the first ion beam generator, and a second grid in the second ion beam generator are configured so as to be asymmetrical to each other.

Abstract: A magnetoresistive device has an MgO (magnesium oxide) layer provided between a first ferromagnetic layer and a second ferromagnetic layer. The device is manufactured by forming a film of the MgO layer in a film forming chamber. A substance whose getter effect with respect to an oxidizing gas is large is adhered to surfaces of components provided in the chamber for forming the MgO layer. The substance having a large getter effect is a substance whose value of oxygen gas adsorption energy is 145 kcal/mol or higher. Ta (tantalum), in particular, is preferable as a substance which constitutes the magnetoresistive device.

Abstract: The present invention provides a substrate processing apparatus capable of suppressing mutual contamination and/or damage of the insides of ion beam generators arranged opposite each other via a substrate, and a magnetic recording medium manufacturing method. A substrate processing apparatus according to an embodiment of the present invention includes a first ion beam generator that applies an ion beam to one surface to be processed of a substrate W, and a second ion beam generator that applies an ion beam to another surface to be processed, which are arranged opposite each other via the substrate W, and an area of a first grid in the first ion beam generator, and an area of a second grid in the second ion beam generator, each area corresponding to an opening of the substrate W, are occluded.

Abstract: There are comprised a load chamber (51) for carrying in a wafer from outside, an unload chamber (53) for carrying out a wafer to outside, and a plurality of conveyance chambers (54a, 54b, 54c) and a plurality of process modules (52a, 52b) connected in series between the load chamber and the unload chamber. The conveyance chambers and the process modules are connected alternately and the plurality of conveyance chambers includes a first end conveyance chamber (54a) connected to the load chamber, a second end conveyance chamber (54c) connected to the unload chamber, and another one or a plurality of intermediate conveyance chambers (54b).

Abstract: A magnetoresistive device has an MgO (magnesium oxide) layer provided between a first ferromagnetic layer and a second ferromagnetic layer. The device is manufactured by forming a film of the MgO layer in a film forming chamber. A substance whose getter effect with respect to an oxidizing gas is large is adhered to surfaces of components provided in the chamber for forming the MgO layer. The substance having a large getter effect is a substance whose value of oxygen gas adsorption energy is 145 kcal/mol or higher. Ta (tantalum), in particular, is preferable as a substance which constitutes the magnetoresistive device.

Abstract: An embodiment of the invention provides a magnetoresistance element with an MR ratio higher than that of the related art and a method of manufacturing the same. A magnetoresistance element includes a substrate, a first crystalline ferromagnetic layer, a tunnel barrier layer, a second crystalline ferromagnetic layer, a nonmagnetic intermediate layer, and a third crystalline ferromagnetic layer. The first ferromagnetic layer is made of an alloy containing Co atoms, Fe atoms, and B atoms. The tunnel barrier layer includes a crystalline magnesium oxide layer or a crystalline boron magnesium oxide layer. The second ferromagnetic layer is made of an alloy containing Co atoms and B atoms or an alloy containing Co atoms and Fe atoms. The third ferromagnetic layer is made of an alloy containing Ni atoms and Fe atoms.

Abstract: A structure is provided in which a load lock chamber (51) for carrying in an unprocessed wafer from outside and carrying out a processed wafer to outside, a first end conveyance chamber (54a) to be connected to the load lock chamber, at least one intermediate conveyance chamber (54b), a plurality of sets of a pair of process modules (52a, 52b) provided adjacent to each other and capable of independent processing, and a second end conveyance chamber (54c) disposed at the end part on the opposite side of the load lock chamber are connected in series. Each set of process modules (52a, 52b, 52c and 52d) is arranged one by one between the first end conveyance chamber and the intermediate conveyance chamber, between the intermediate conveyance chambers, and between the intermediate conveyance chamber and the second end conveyance chamber, respectively.

Abstract: An embodiment of the invention provides a magnetoresistance element with an MR ratio higher than that of the related art. A magnetoresistance element includes a first crystalline ferromagnetic layer, a tunnel barrier layer, and a second crystalline ferromagnetic layer. Each of the three layers has a polycrystalline structure including an aggregate of columnar crystals. The tunnel barrier layer is a layer of a metal oxide containing B atoms and Mg atoms. The content of B atoms in the tunnel barrier layer is at least 30 atomic %.

Abstract: This application discloses a method and apparatus for manufacturing a magnetoresistive multilayer film having a structure where an antiferromagnetic layer, a pinned-magnetization layer, a nonmagnetic spacer layer and a free-magnetization layer are laminated on a substrate in this order. A film for the antiferromagnetic layer is deposited by sputtering as oxygen gas is added to a gas for the sputtering. A film for an extra layer interposed between the substrate and the antiferromagnetic layer is deposited by sputtering as oxygen gas is added to a gas for the sputtering. The film for the antiferromagnetic layer is deposited by sputtering as a gas mixture of argon and another gas of larger atomic number than argon is used.

Abstract: There are comprised a load chamber (51) for carrying in a wafer from outside, an unload chamber (53) for carrying out a wafer to outside, and a plurality of conveyance chambers (54a, 54b, 54c) and a plurality of process modules (52a, 52b) connected in series between the load chamber and the unload chamber. The conveyance chambers and the process modules are connected alternately and the plurality of conveyance chambers includes a first end conveyance chamber (54a) connected to the load chamber, a second end conveyance chamber (54c) connected to the unload chamber, and another one or a plurality of intermediate conveyance chambers (54b).

Abstract: A structure is provided in which a load lock chamber (51) for carrying in an unprocessed wafer from outside and carrying out a processed wafer to outside, a first end conveyance chamber (54a) to be connected to the load lock chamber, at least one intermediate conveyance chamber (54b), a plurality of sets of a pair of process modules (52a, 52b) provided adjacent to each other and capable of independent processing, and a second end conveyance chamber (54c) disposed at the end part on the opposite side of the load lock chamber are connected in series. Each set of process modules (52a, 52b, 52c and 52d) is arranged one by one between the first end conveyance chamber and the intermediate conveyance chamber, between the intermediate conveyance chambers, and between the intermediate conveyance chamber and the second end conveyance chamber, respectively.

Abstract: This application discloses a method and apparatus for manufacturing a magnetoresistive multilayer film having a structure where an antiferromagnetic layer, a pinned-magnetization layer, a nonmagnetic spacer layer and a free-magnetization layer are laminated on a substrate in this order. A film for the antiferromagnetic layer is deposited by sputtering as oxygen gas is added to a gas for the sputtering. A film for an extra layer interposed between the substrate and the antiferromagnetic layer is deposited by sputtering as oxygen gas is added to a gas for the sputtering. The film for the antiferromagnetic layer is deposited by sputtering as a gas mixture of argon and another gas of larger atomic number than argon is used.

Abstract: A structure is provided in which a load lock chamber (51) for carrying in and out a wafer, a first conveyance module (53a) having a first conveyance mechanism (54a), a first process module (52a), a second conveyance module (53b) having a second conveyance mechanism (54b), and a second process module (52b) are sequentially connected in series. A wafer (55) is conveyed between the load lock chamber and the first process module by the first conveyance mechanism and conveyed between the first process module and the second process module by the second conveyance mechanism.

Abstract: The present invention provides a substrate processing apparatus capable of suppressing mutual contamination and/or damage of the insides of ion beam generators arranged opposite each other via a substrate, and a magnetic recording medium manufacturing method. A substrate processing apparatus according to an embodiment of the present invention includes a first ion beam generator that applies an ion beam to one surface to be processed of a substrate, and a second ion beam generator that applies an ion beam to another surface to be processed, which are arranged opposite each other via the substrate, and a first grid in the first ion beam generator, and a second grid in the second ion beam generator are configured so as to be asymmetrical to each other.

Abstract: The present invention provides a substrate processing apparatus capable of suppressing mutual contamination and/or damage of the insides of ion beam generators arranged opposite each other via a substrate, and a magnetic recording medium manufacturing method. A substrate processing apparatus according to an embodiment of the present invention includes a first ion beam generator that applies an ion beam to one surface to be processed of a substrate W, and a second ion beam generator that applies an ion beam to another surface to be processed, which are arranged opposite each other via the substrate W, and an area of a first grid in the first ion beam generator, and an area of a second grid in the second ion beam generator, each area corresponding to an opening of the substrate W, are occluded.

Abstract: A method for manufacturing a magnetoresistive multilayer film. An antiferromagnetic layer, a pinned-magnetization layer, a nonmagnetic spacer layer and a free-magnetization layer are laminated on a substrate in this order. A film for the antiferromagnetic layer is deposited by a sputtering process as oxygen gas is added to a gas for sputtering. A film for an extra layer interposed between the substrate and the antiferromagnetic layer is deposited by a sputtering process as oxygen gas is added to a gas for sputtering. A film for the antiferromagnetic layer is deposited by a sputtering process with a gas mixture of argon and another gas of larger atomic number than argon.

Abstract: A method of manufacturing a magnetoresistance effect element having a high MR ratio even with a low RA and an apparatus of the same are provided. The magnetoresistance effect element having an MgO (magnesium oxide) layer provided between a ferromagnetic layer and a second ferromagnetic layer is manufactured by forming a film of the MgO layer in a film forming chamber in which a substance whose getter effect with respect to the oxidizing gas such as oxygen or water is large is adhered to the surfaces of components (an inner wall 37 of a film forming chamber in the interior of a first film forming chamber 21, inner walls of an adhesion preventing shield 36, a partitioning plate 22, a shutter or the like) provided in the chamber for forming the MgO layer. The substance having a large getter effect must simply be a substance whose value of oxygen gas adsorption energy is 145 kcal/mol or higher and, in particular, Ta (tantalum) as a substance which constitutes the magnetoresistance effect element is preferable.

Abstract: A sputtering apparatus according to the present invention includes a substrate holding means for holding substrates and gas introducing routes having a plurality of gas jetting ports arranged at a plurality of places surrounding the substrates, and characterized in that at least one of the gas introducing routes is provided with a gas introduction connecting port, and the number of gas jetting ports provided in at least one of the gas introducing routes with the gas introduction connecting port is smaller than the number of gas jetting ports provided in the other gas introducing routes without the gas introduction connecting ports, or an aperture of each of the gas jetting ports provided in at least one of the gas introducing routes with the gas introduction connecting port is smaller than an aperture of each of the gas jetting ports provided in the other gas introducing routes without the gas introduction connecting ports.

Abstract: This application discloses a magnetoresistive multilayer film having the structure where an antiferromagnetic layer, a pinned-magnetization layer, a non-magnetic spacer layer and a free-magnetization layer are laminated in this order. An opposite-side layer is provided on the side of the antiferromagnetic layer opposite to the pined-magnetization layer. The opposite-side layer has components of nickel and chromium. An atomic numeral ratio of chromium in the opposite-side layer is preferably not less than 41% and not more than 70%, more preferably not less than 43%.