Abstract: Methods are provided for using masking techniques and plasma etching techniques to dice a compound semiconductor wafer into dies. Using these methods allows compound semiconductor die to be obtained that have smooth side walls, a variety of shapes and dimensions, and a variety of side wall profiles. In addition, by using these techniques to perform the dicing operations, the locations of features of the die relative to the side walls are ascertainable with certainty such that one or more of the side walls can be used as a passive alignment feature to precisely align one or more of the die with an external device.

Abstract: Methods are provided for using masking techniques and plasma etching techniques to dice a compound semiconductor wafer into dies. Using these methods allows compound semiconductor die to be obtained that have smooth side walls, a variety of shapes and dimensions, and a variety of side wall profiles. In addition, by using these techniques to perform the dicing operations, the locations of features of the die relative to the side walls are ascertainable with certainty such that one or more of the side walls can be used as a passive alignment feature to precisely align one or more of the die with an external device.

Abstract: A opto-electronic device includes a semiconductor device and a non-imaging optical concentrator on a surface of the semiconductor device. The semiconductor device has a substrate and a photodetector formed on a surface of the substrate. The non-imaging optical concentrator has a peripheral surface extending around a central region of the active area of the photodetector. The non-imaging optical concentrator redirects at least a portion of incoming light into the active area.

Abstract: Methods are provided for using masking techniques and plasma etching techniques to dice a compound semiconductor wafer into dies. Using these methods allows compound semiconductor die to be obtained that have smooth side walls, a variety of shapes and dimensions, and a variety of side wall profiles. In addition, by using these techniques to perform the dicing operations, the locations of features of the die relative to the side walls are ascertainable with certainty such that one or more of the side walls can be used as a passive alignment feature to precisely align one or more of the die with an external device.

Abstract: A process for the preparation of hermetically sealed electronically active microstructures involves the preparation of a plurality of microstructures and associated conductive paths and lead bond areas on a single wafer such that areas surrounding the microstructures are maintained in a planar condition. A second wafer having a plurality of microstructure-receiving cavities is placed atop the first wafer and fusion or anodically bonded. The microstructures are preferably connected to lead bond pads which lie outside the surround, the second wafer also having bond pad accessing through-holes to facilitate bonding electrical leads to the devices after sawing from the wafer. The lead-connected devices may be further encapsulated by injection molding, potting, or other conventional encapsulative packaging techniques.

Abstract: A hermetic seal for an electronic component has a cap having a base portion with laterally extending walls. The laterally extending walls define a main chamber therebetween. A cavity is formed in the end of the laterally extending walls to define a secondary chamber and divide the end of the laterally extending walls into a first area and second area. The cap is hermetically sealed to the base at the first and second areas of the laterally extending walls so that the secondary chamber and the main chamber are separately hermetically sealed.

Abstract: A (GaAs-resident) application specific monolithic microwave integrated circuit (ASMMIC) is fabricated through the use of footprints that include a portion of the metallization through which the circuit components within the wafer are to be interconnected. The metallization is a three layers structure, the first two layers of which include strategically arranged reactance circuit components (MIM) capacitors. A first of the three metal layers is formed on a first surface of the substrate which contains a plurality of semiconductor device regions and conductive material for ohmic contact to the regions, so that portions of the first metal layer are in ohmic contact with the conductive material. The first metal layer provides the bottom plate of the MIM capacitors. A dielectric layer, which serves as the dielectric insulator of the MIM capacitors, is formed on second portions of the first metal layer.

Abstract: A (GaAs-resident) application specific monolithic microwave integrated circuit (ASMMIC) is fabricated through the use of footprints that include a portion of the metallization through which the circuit components within the wafer are to be interconnected. The metallization is a three layers structure, the first two layers of which include strategically arranged reactance circuit components (MIM) capacitors. A first of the three metal layers is formed on a first surface of the substrate which contains a plurality of semiconductor device regions and conductive material for ohmic contact to the regions, so that portions of the first metal layer are in ohmic contact with the conductive material. The first metal layer provides the bottom plate of the MIM capacitors. A dielectric layer, which serves as the dielectric insulator of the MIM capacitors, is formed on second portions of the first metal layer.

Abstract: An air lifting vehicle includes, inter alia, a main frame containing an engine, a helicopter-type rotor driven by the engine, a rear located propeller which provides torque compensation for the rotor as well as yaw control for the vehicle, and a pilot's cabin. Attached to the frame through a plurality of outwardly extending truss members is a keel structure which includes a circular truss section essentially coaxial with and positioned above the rotor and other generally triangular or rounded triangular truss sections attached fore and aft of the circular truss section. Balloon members including fore and aft generally triangular Forlanini envelope sections are secured to the keel and laced together at the center to define a circular opening or duct above the rotor. A pair of forward thrusting propellers are driven by an auxiliary engine carried in the frame and are gimbaled in the elevational plane for pitch control of the vehicle.