Abstract: An apparatus for obtaining ion energy distribution, IED, measurements in a plasma processing system, in one example, comprising a substrate for placement in the plasma processing system and exposed to the plasma, an ion energy analyser disposed in the substrate for measuring the ion energy distribution at the substrate surface during plasma processing, the analyser comprising a first conductive grid, a second conductive grid, a third conductive grid, a fourth conductive grid, and a collection electrode, each grid separated by an insulation layer, a battery power supply and control circuitry, integrated in the substrate, for supplying and controlling voltage to each of the grids and the collector of the ion energy analyser; wherein at least one insulation layer includes a peripheral portion which is of reduced thickness with respect to the remaining portion of the insulation layer.

Abstract: A system for non-invasive sensing of radio-frequency current spectra. In one example, the system comprises a plasma processing chamber, a plasma generator, and a shunt connector having a resistor therein. In one example, the shunt connector is attached across an opening in a ground-return path between the chamber and the generator.

Abstract: Methods of operating an apparatus to obtain ion energy distribution measurements in a plasma processing system are described.

Abstract: A matching unit controller working in combination with a matching unit for a plasma processing machine is described. In one example, the controller has a master controller application and acts as a local master in the matching unit. In one example, the controller gathers data from the input and output sensors and feeds the data to an intelligent algorithm. In one example, the output from the algorithm is used to set the matching unit capacitor positions. In one example, the controller also has a slave controller application to communicate with a master controller of the plasma processing machine.

Abstract: An apparatus for obtaining ion energy distribution, IED, measurements in a plasma processing system, in one example, comprising a substrate for placement in the plasma processing system and exposed to the plasma, an ion energy analyser disposed in the substrate for measuring the ion energy distribution at the substrate surface during plasma processing, the analyser comprising a first conductive grid, a second conductive grid, a third conductive grid, a fourth conductive grid and a collection electrode, each grid separated by an insulation layer, a battery power supply and control circuitry, integrated in the substrate, for supplying and controlling voltage to each of the grids and the collector of the ion energy analyser; and a high voltage generating circuit.

Abstract: An apparatus for obtaining ion energy distribution, TED, measurements in a plasma processing system, in one example, comprising a substrate for placement in the plasma processing system and exposed to the plasma, an ion energy analyser disposed in the substrate for measuring the ion energy distribution at the substrate surface during plasma processing, the analyser comprising a first conductive grid, a second conductive grid, a third conductive grid, a fourth conductive grid, and a collection electrode, each grid separated by an insulation layer, a battery power supply and control circuitry, integrated in the substrate, for supplying and controlling voltage to each of the grids and the collector of the ion energy analyser; wherein at least one insulation layer includes a peripheral portion which is of reduced thickness with respect to the remaining portion of the insulation layer.

Abstract: A system for monitoring a condition in an enclosed plasma processing space (102). The system comprises a sensor (338), arranged to be provided within the enclosed plasma processing space, for sensing a condition in the enclosed plasma processing space and a modulation circuit (342), connected to the sensor, and arranged to modulate an output of the sensor to provide a modulated signal. The system further comprises a first transmission line coupler (330) arranged to be disposed within the enclosed plasma processing space. The first transmission line coupler (546) is connected to the modulation circuit and is arranged to couple the modulated signal to a transmission line, which is arranged to deliver energy into the enclosed plasma space.

Abstract: A system for monitoring a condition in an enclosed plasma processing space (102). The system comprises a sensor (338), arranged to be provided within the enclosed plasma processing space, for sensing a condition in the enclosed plasma processing space and a modulation circuit (342), connected to the sensor, and arranged to modulate an output of the sensor to provide a modulated signal. The system further comprises a first transmission line coupler (330) arranged to be disposed within the enclosed plasma processing space. The first transmission line coupler (546) is connected to the modulation circuit and is arranged to couple the modulated signal to a transmission line, which is arranged to deliver energy into the enclosed plasma space.

Abstract: An optical sensor having a sapphire body is disclosed. A hollow in the sapphire body defines a surface which is used as a surface of a Fabry-Perot cavity. Interferometry is used to detect changes in the length of the Fabry-Perot cavity, and hence changes in, for example, the temperature or pressure of an environment in which the sensor is placed.