Abstract: Nozzles and method of making the same are disclosed. The disclosed nozzles have an inlet face and a three-dimensional outlet face opposite the inlet face. The nozzles may have one or more nozzle through-holes extending from the inlet face to the outlet face. Fuel injectors containing the nozzle are also disclosed. Methods of making and using nozzles and fuel injectors are further disclosed.

Abstract: Nozzles and method of making the same are disclosed. The disclosed nozzles have a non-coined three-dimensional inlet face and an outlet face opposite the inlet face. The nozzles may have one or more nozzle through-holes extending from the inlet face to the outlet face. Fuel injectors containing the nozzle are also disclosed. Methods of making and using nozzles and fuel injectors are further disclosed.

Abstract: Nozzles and method of making the same are disclosed. The disclosed nozzles have a non-coined three-dimensional inlet face and an outlet face opposite the inlet face. The nozzles may have one or more nozzle through-holes extending from the inlet face to the outlet face. Fuel injectors containing the nozzle are also disclosed. Methods of making and using nozzles and fuel injectors are further disclosed.

Abstract: Nozzles and method of making the same are disclosed. The disclosed nozzles have at least one nozzle through-hole therein, wherein the at least one nozzle through-hole has (i) a single inlet opening along an inlet face and multiple outlet openings along an outlet face or (ii) multiple inlet openings along an inlet face and a single outlet opening along an outlet face. Fuel injectors containing the nozzle are also disclosed. Methods of making and using nozzles and fuel injectors are further disclosed.

Abstract: Nozzles and method of making the same are disclosed. The disclosed nozzles have at least one nozzle through-hole therein, wherein the at least one nozzle through-hole exhibits a coefficient of discharge, CD, of greater than about 0.50. Fuel injectors containing the nozzle are also disclosed. Methods of making and using nozzles and fuel injectors are further disclosed.

Abstract: An assembly includes a dielectric layer in contact with a semiconductor layer. The dielectric layer includes a crosslinked polymeric material having isocyanurate groups, wherein the dielectric layer is free of zirconium oxide particles. The semiconductor layer includes a non-polymeric organic semiconductor material, and is substantially free of electrically insulating polymer. Electronic components and devices including the assembly are also disclosed.

Abstract: Compositions such as photoresists and microfabrication processes are provided that can produce high-fidelity microfabricated structures. The provided photoresists can have reduced swelling during the development phase and can give tight tolerances for products, such as microneedles, that can be used, for example, in the medical field. The provided compositions include a photoresist, a photoinitiator system dispersed in the photoresist, and a polymer-tethered nanoparticle dispersed in the photoresist. The photoresist can be a negative photoresist and the photoinitiator system can include a two-photoinitiator system. The polymer-tethered nanoparticle can include an acrylic polymer and, in some embodiments, can include poly(methyl methacrylate). The nanoparticles can include silica.

Abstract: A plasma hydrogenated region in the dielectric layer of a semiconductor thin film transistor (TFT) structure improves the stability of the TFT. The TFT is a multilayer structure including an electrode, a dielectric layer disposed on the electrode, and a metal oxide semiconductor on the dielectric. Exposure of the dielectric layer to a hydrogen containing plasma prior to deposition of the semiconductor produces a plasma hydrogenated region at the semiconductor-dielectric interface. The plasma hydrogenated region incorporates hydrogen which decreases in concentration from semiconductor/dielectric interface into the bulk of one or both of the dielectric layer and the semiconductor layer.

Abstract: An assembly includes a dielectric layer in contact with a semiconductor layer. The dielectric layer includes a cross-linked polymeric material having isocyanurate groups, wherein the dielectric layer is free of zirconium oxide particles. The semiconductor layer includes a non-polymeric organic semiconductor material, and is substantially free of electrically insulating polymer. Electronic components and devices including the assembly are also disclosed.

Abstract: Compositions that contain an organic semiconductor dissolved in a solvent mixture are described. More specifically, the solvent mixture includes an alkane having 9 to 16 carbon atoms in an amount equal to 1 to 20 weight percent and an aromatic compound in an amount equal to 80 to 99 weight percent. The semiconductor material is dissolved in the solvent mixture in an amount equal to at least 0.1 weight percent based on a total weight of the composition. Methods of making a semiconductor device using the compositions to form a semiconductor layer are also described.

Abstract: A plasma hydrogenated region in the dielectric layer of a semiconductor thin film transistor (TFT) structure improves the stability of the TFT. The TFT is a multilayer structure including an electrode, a dielectric layer disposed on the electrode, and a metal oxide semiconductor on the dielectric. Exposure of the dielectric layer to a hydrogen containing plasma prior to deposition of the semiconductor produces a plasma hydrogenated region at the semiconductor-dielectric interface. The plasma hydrogenated region incorporates hydrogen which decreases in concentration from semiconductor/dielectric interface into the bulk of one or both of the dielectric layer and the semiconductor layer.

Abstract: Compositions that contain an organic semiconductor dissolved in a solvent mixture are described. More specifically, the solvent mixture includes an alkane having 9 to 16 carbon atoms in an amount equal to 1 to 20 weight percent and an aromatic compound in an amount equal to 80 to 99 weight percent. The semiconductor material is dissolved in the solvent mixture in an amount equal to at least 0.1 weight percent based on a total weight of the composition. Methods of making a semiconductor device using the compositions to form a semiconductor layer are also described.