Abstract: The disclosed technology generally relates dielectric materials, and more particularly to a combination of co-fireable dielectric materials that can be attached to each other without the use of adhesives. In an aspect, a composite article comprises a magnetic portion comprising a nickel zinc ferrite. The composite article additionally comprises a non-magnetic portion contacting the magnetic portion, the non-magnetic portion comprising a spinel-structured oxide comprising Mg2-xAl2xTi1-xO4 and having a dielectric constant between about 7 and 14, wherein 0<x?1.

Abstract: Disclosed herein are embodiments of low temperature co-fireable dielectric materials which can be used in conjunction with high dielectric materials to form composite structures, in particular for isolators and circulators for radiofrequency components. Embodiments of the low temperature co-fireable dielectric materials can be scheelite or garnet structures, for example barium tungstate. Adhesives and/or glue is not necessary for the formation of the isolators and circulators.

Abstract: A computer-implemented method for gathering, organizing, and utilizing information about users utilizing a gaming or other interface can include generating, at a computing device having one or more processors, a customized user interface for each of a plurality of users. The customized user interface can present a series of questions to its associated user. The method can further include ingesting answers from each of the plurality of users and associating each user with his/her answers to form a user profile. A machine learning algorithm can be utilized to identify groupings of the plurality of users. Each particular grouping can include users whose user profile is in some manner more similar to the user profiles of other users in the particular grouping than to the user profiles of users in other groupings. The method can also include adapting the customized user interface for each user based on the user profiles.

Abstract: A hoisting system including a hoisting apparatus and a connector. The connector including a first part and a second part, one of which is suspended from the hoisting apparatus and the other secured to the load. Each of the first and second parts includes corresponding curved surface that enclose a cylindrical volume. The curved surface of the second part being coaxial but spaced from one another, wherein one of the first part or the second part is provided with a plurality of pins which are spaced around a circumference of and extend radially from the curved surface of the one of the first part or the second part. The curved surface of the other one of the first part or the second part is provided with an indexing channel and a plurality of entry channels.

Abstract: Provided herein are methods and compositions for the detection of silent carriers of chromosomal deletion alleles in a human subject using haploid cells (e.g., sperm cells or egg cells) derived from the subject. The methods provided herein allow for the detection of silent (2+0) carriers of SMA, where the individual has a deletion of the SMN1 gene on one chromosome 5 homolog and two or more copies of the SMN1 gene on the other chromosome 5 homolog.

Abstract: Disclosed are embodiments of making a barium magnesium tantalate. The method can include providing barium magnesium tantalate and incorporating one of Ba2MgWO6, Ba8LiTa5WO24, Ba8LiTa5WO24, Ba2MgWO6, Ba3LaTa3O12, Ba8LiTa5WO24, BaLaLiWO6, Ba4Ta2WO12, Ba2La2MgW2O12, BaLaLiWO6, Sr3LaTa3O12, and SrLaTaO12 into the barium magnesium tantalate to form a solid solution having a high Q value.

Abstract: Disclosed herein are embodiments of an enhanced resonant frequency hexagonal ferrite material and methods of manufacturing. The hexagonal ferrite material can be Y-phase hexagonal ferrite material, such as those including strontium. In some embodiments, oxides consistent with the stoichiometry of Sr3Co2Fe24O41, SrFe12O19 or CoFe2O4 can be used form an enhanced hexagonal ferrite material.

Abstract: An integrated microstrip circulator comprises a dielectric substrate having an aperture, a ferrite disc secured within the aperture in the dielectric substrate, metallization on upper surfaces of the dielectric substrate and the ferrite disc, and surface mount contacts disposed on lower surfaces of the dielectric substrate and the ferrite disc and in electrical communication with the metallization on the upper surfaces of the dielectric substrate and the ferrite disc.

Abstract: Disclosed herein are ceramic materials, such as bismuth substituted garnets, which can have high curie temperatures and high dielectric constants. In certain implementations, indium can be incorporated into the ceramic to improve certain properties and to avoid calcium compensation. The ceramic materials disclosed herein can be particular advantageous for below resonance applications.

Abstract: Embodiments disclosed herein relate to using cobalt (Co) to fine tune the magnetic properties, such as permeability and magnetic loss, of nickel-zinc ferrites to improve the material performance in electronic applications. The method comprises replacing nickel (Ni) with sufficient Co+2 such that the relaxation peak associated with the Co+2 substitution and the relaxation peak associated with the nickel to zinc (Ni/Zn) ratio are into near coincidence. When the relaxation peaks overlap, the material permeability can be substantially maximized and magnetic loss substantially minimized. The resulting materials are useful and provide superior performance particularly for devices operating at the 13.56 MHz ISM band.

Abstract: Embodiments of synthetic garnet materials having advantageous properties, especially for below resonance frequency applications, are disclosed herein. In particular, embodiments of the synthetic garnet materials can have high Curie temperatures and dielectric constants while maintaining low magnetization. These materials can be incorporated into isolators and circulators, such as for use in telecommunication base stations.

Abstract: An acoustic wave device is disclosed. The acoustic wave device can include a substrate, an interdigital transducer electrode disposed on the substrate, and a temperature compensation layer over the interdigital transducer electrode. The IDT electrode includes a lower layer, an upper layer, and a buffer layer disposed between the lower layer and the upper layer. A modulus of elasticity of the buffer layer is less than a modulus of elasticity of the upper layer. The buffer layer is configured to release stress between the lower layer and the upper layer caused due to a difference between a coefficient of thermal expansion of the lower layer and a coefficient of thermal expansion of the upper layer.

Abstract: There is provided assemblies for combining a group of laser sources into a combined laser beam. There is further provided a blue diode laser array that combines the laser beams from an assembly of blue laser diodes. There are provided laser processing operations and applications using the combined blue laser beams from the laser diode arrays and modules.

Abstract: Aspects of this disclosure relate to an acoustic wave device with a piezoelectric layer that includes a wurtzite structure. The wurtzite structure can include aluminum nitride and silicon carbide. Related piezoelectric layers, acoustic wave filters, radio frequency modules, wireless communication devices, and methods are disclosed.

Abstract: Aspects of this disclosure relate to an acoustic wave device with a silicon oxycarbide layer over a trap rich layer. The acoustic wave device can include a piezoelectric layer over the silicon oxycarbide. The acoustic wave device can be a surface acoustic wave device in certain applications. The acoustic wave device can be a bulk acoustic wave device in some other applications. Related acoustic wave filters, radio frequency modules, wireless communication devices, and methods are disclosed.

Abstract: Aspects of this disclosure relate to an acoustic wave device with a temperature compensation layer that includes silicon oxycarbide. The temperature compensation layer can be in physical contact with at least a portion of a piezoelectric layer of the acoustic wave device. The acoustic wave device can be a surface acoustic wave device in certain applications. The acoustic wave device can be a bulk acoustic wave device in some other applications. Related acoustic wave filters, radio frequency modules, wireless communication devices, and methods are disclosed.

Abstract: Embodiments of synthetic garnet materials having advantageous properties, especially for below resonance frequency applications, are disclosed herein. In particular, embodiments of the synthetic garnet materials can have high Curie temperatures and dielectric constants while maintaining low magnetization. These materials can be incorporated into isolators and circulators, such as for use in telecommunication base stations.

Abstract: Aspects of this disclosure relate to an acoustic wave device with a piezoelectric layer that includes a wurtzite structure. The wurtzite structure can include a group 2 element and have a high acoustic velocity. For example, the wurtzite structure can include a carbide and the group 2 element can be carbon of the carbide. The high acoustic velocity can be over 10,000 meters per second. Related piezoelectric layers, acoustic wave filters, radio frequency modules, wireless communication devices, and methods are disclosed.

Abstract: A temperature compensated surface acoustic wave device is disclosed. The temperature compensated surface acoustic wave device can include a piezoelectric layer, an interdigital transducer electrode over the piezoelectric layer, and a temperature compensation layer over the interdigital transducer electrode. The interdigital transducer electrode includes a first layer, a second layer over the first layer, and a buffer layer between the first layer and the second layer. A thermal conductivity of the second layer is greater than a thermal conductivity of the buffer layer. The buffer layer can be a titanium layer. A thickness of the buffer layer can be in a range of 20 nm to 200 nm, or in a range of 5% to 30% of a thickness of the interdigital transducer electrode.

Abstract: Disclosed herein are embodiments of an enhanced resonant frequency hexagonal ferrite material and methods of manufacturing. The hexagonal ferrite material can be Y-phase strontium hexagonal ferrite material. In some embodiments, strontium can be substituted out for a trivalent or tetravalent ion composition including potassium, thereby providing for advantageous properties.