Abstract: The present invention relates to solid forms of (S)—N-(4-cyano-3-(trifluoromethyl)phenyl)-3-(4-cyanophenoxy)-2-hydroxy-2-methylpropanamide and process for producing the same.

Abstract: A Flash memory card is disclosed comprising a substrate, a Flash memory die on top of the substrate, a controller die on top of the Flash memory die, and an interposer coupled to with the controller die and on top of the Flash memory die wherein the interposer results in substantial reduced wire bonding to the substrate. The interposer can surround or be placed side by side with the controller die. A system and method in accordance with the present invention achieves the following objectives: (1) takes advantage of as large of a Flash memory die as possible, to increase the density of the Flash card by reducing the number of wire bond pads on the substrate and enabling insertion of the largest die possible that can fit inside a given card interior boundary; (2) more efficiently stacks Flash memory dies to increase density of the Flash card; and (3) has a substantially less number of bonding wires to the substrate as possible, to improve production yield.

Abstract: A memory card comprising a substrate, a memory die on top of the memory die, a controller die on top of the memory die; and a interposer surrounding the controller die and on top of the memory die wherein the interposer allows for wire bonding to the substrate to be minimized. A system and method in accordance with the present invention achieves the following objectives: (1) increase the density of the Flash card by reducing the number of wire bond pads on the substrate and enabling insertion of the largest die possible that can fit inside a given card interior boundary; (2) more efficiently stacks Flash memory dies when stacking is necessary, to increase density of the Flash card; (3) has only a few necessary signal I/O bonding wires to the substrate to improve production yield.

Abstract: A Flash memory card is disclosed comprising a substrate, a Flash memory die on top of the substrate, a controller die on top of the Flash memory die, and an interposer coupled to with the controller die and on top of the Flash memory die wherein the interposer results in substantial reduced wire bonding to the substrate. The interposer can surround or be placed side by side with the controller die. A system and method in accordance with the present invention achieves the following objectives: (1) takes advantage of as large of a Flash memory die as possible, to increase the density of the Flash card by reducing the number of wire bond pads on the substrate and enabling insertion of the largest die possible that can fit inside a given card interior boundary; (2) more efficiently stacks Flash memory dies to increase density of the Flash card; and (3) has a substantially less number of bonding wires to the substrate as possible, to improve production yield.

Abstract: Apparatus comprising a thin film transistor having passivation layer disposed adjacent to a second surface of said channel layer, wherein said passivation layer comprises one or more wide-bandgap dielectric materials.

Abstract: A high level Operational Support System (OSS) framework provides the infrastructure and analytical system to enable all applications and systems to be managed dynamically at runtime regardless of platform or programming technology. Applications are automatically discovered and managed. Java applications have the additional advantage of auto-inspection (through reflection) to determine their manageability. Resources belonging to application instances are associated and managed with that application instance. This provides operators the ability to not only manage an application, but its distributed components as well. They are presented as belonging to a single application instance node that can be monitored, analyzed, and managed. The OSS framework provides the platform-independent infrastructure that heterogeneous applications require to be monitored, controlled, analyzed and managed at runtime.

Abstract: A request scheduling method is provided in a request accessing system having a processing unit, an upstream unit coupled to the processing unit, a downstream unit coupled to the processing unit and the upstream unit, and at least one endpoint device coupled to the upstream unit and the downstream unit, wherein the endpoint device asserts at least one request to the upstream unit. The request scheduling method includes: transmitting the request to a processing unit while the request is a non-peer-to-peer request, and transmitting the request to a downstream unit while the request is a peer-to-peer request; wherein if the request is a peer-to-peer and posted request and there is a previous asserted request which is peer-to-peer and non-posted request and the previous asserted request has a latency exceeds a predetermined time, transmitting the request earlier than the previous asserted request to the downstream unit.

Abstract: A Flash memory card is disclosed comprising a substrate, a Flash memory die on top of the substrate, a controller die on top of the Flash memory die, and an interposer coupled to with the controller die and on top of the Flash memory die wherein the interposer results in substantial reduced wire bonding to the substrate. The interposer can surround or be placed side by side with the controller die. A system and method in accordance with the present invention achieves the following objectives: (1) takes advantage of as large of a Flash memory die as possible, to increase the density of the Flash card by reducing the number of wire bond pads on the substrate and enabling insertion of the largest die possible that can fit inside a given card interior boundary; (2) more efficiently stacks Flash memory dies to increase density of the Flash card; and (3) has a substantially less number of bonding wires to the substrate as possible, to improve production yield.

Abstract: A semiconductor device can include a channel including a zinc-indium oxide film.

Abstract: A semiconductor device can include a channel including a zinc-indium oxide film.

Abstract: A semiconductor device can include a channel including a zinc-indium oxide film.

Abstract: Embodiments of methods, apparatuses, devices, and/or systems for forming a passivation layer are described.

Abstract: A semiconductor device can include a channel including a zinc-indium oxide film.