Patents by Inventor David J. Cooperberg
David J. Cooperberg has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 10403475Abstract: A tunable multi-zone injection system for a plasma processing system for plasma processing of substrates such as semiconductor wafers. The injector can include an on-axis outlet supplying process gas at a first flow rate to a central zone and off-axis outlets supplying the same process gas at a second flow rate to an annular zone surrounding the central zone. The arrangement permits modification of gas delivery to meet the needs of a particular processing regime by allowing independent adjustment of the gas flow to multiple zones in the chamber. In addition, compared to consumable showerhead arrangements, a removably mounted gas injector can be replaced more easily and economically.Type: GrantFiled: May 4, 2015Date of Patent: September 3, 2019Assignee: LAM RESEARCH CORPORATIONInventors: David J. Cooperberg, Vahid Vahedi, Douglas Ratto, Harmeet Singh, Neil Benjamin
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Publication number: 20150235811Abstract: A tunable multi-zone injection system for a plasma processing system for plasma processing of substrates such as semiconductor wafers. The injector can include an on-axis outlet supplying process gas at a first flow rate to a central zone and off-axis outlets supplying the same process gas at a second flow rate to an annular zone surrounding the central zone. The arrangement permits modification of gas delivery to meet the needs of a particular processing regime by allowing independent adjustment of the gas flow to multiple zones in the chamber. In addition, compared to consumable showerhead arrangements, a removably mounted gas injector can be replaced more easily and economically.Type: ApplicationFiled: May 4, 2015Publication date: August 20, 2015Applicant: LAM RESEARCH CORPORATIONInventors: David J. Cooperberg, Vahid Vahedi, Douglas Ratto, Harmeet Singh, Neil Benjamin
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Patent number: 9051647Abstract: A tunable multi-zone injection system for a plasma processing system for plasma processing of substrates such as semiconductor wafers. The system includes a plasma processing chamber, a substrate support for supporting a substrate within the processing chamber, a dielectric member having an interior surface facing the substrate support, the dielectric member forming a wall of the processing chamber, a gas injector fixed to part of or removably mounted in an opening in the dielectric window, the gas injector including a plurality of gas outlets supplying process gas at adjustable flow rates to multiple zones of the chamber, and an RF energy source such as a planar or non-planar spiral coil which inductively couples RF energy through the dielectric member and into the chamber to energize the process gas into a plasma state.Type: GrantFiled: October 23, 2009Date of Patent: June 9, 2015Assignee: Lam Research CorporationInventors: David J. Cooperberg, Valid Vahedi, Douglas Ratto, Harmeet Singh, Neil Benjamin
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Publication number: 20140261803Abstract: A gas chamber contains upper and lower chamber bodies forming a cavity, a heating chuck for a wafer, a remote gas source, and an exhaust unit. Gas is injected into the cavity through channels in an injector. Each channel has sections that are bent with respect to each other at a sufficient angle to substantially eliminate entering light rays entering the channel from exiting the channel without reflection. The channels have funnel-shaped nozzles at end points proximate to the chuck. The injector also has thermal expansion relief slots and small gaps between the injector and mating surfaces of the chamber and gas source. The temperature of the injector is controlled by a cooling liquid in cooling channels and electrical heaters in receptacles of the injector. The upper chamber body is funnel-shaped and curves downward at an end of the upper chamber body proximate to the chuck.Type: ApplicationFiled: March 15, 2013Publication date: September 18, 2014Inventors: Ing-Yann Wang, Jaroslaw W. Winniczek, David J. Cooperberg, Erik A. Edelberg, Robert P. Chebi
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Patent number: 8425682Abstract: A gas chamber contains upper and lower chamber bodies forming a cavity, a heating chuck for a wafer, a remote gas source, and an exhaust unit. Gas is injected into the cavity through channels in an injector. Each channel has sections that are bent with respect to each other at a sufficient angle to substantially eliminate entering light rays entering the channel from exiting the channel without reflection. The channels have funnel-shaped nozzles at end points proximate to the chuck. The injector also has thermal expansion relief slots and small gaps between the injector and mating surfaces of the chamber and gas source. The temperature of the injector is controlled by a cooling liquid in cooling channels and electrical heaters in receptacles of the injector. The upper chamber body is funnel-shaped and curves downward at an end of the upper chamber body proximate to the chuck.Type: GrantFiled: September 21, 2012Date of Patent: April 23, 2013Assignee: Lam Research CorporationInventors: Ing-Yann Wang, Jaroslaw W. Winniczek, David J. Cooperberg, Erik A. Edelberg, Robert P. Chebi
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Patent number: 8298336Abstract: A gas chamber contains upper and lower chamber bodies forming a cavity, a heating chuck for a wafer, a remote gas source, and an exhaust unit. Gas is injected into the cavity through channels in an injector. Each channel has sections that are bent with respect to each other at a sufficient angle to substantially eliminate entering light rays entering the channel from exiting the channel without reflection. The channels have funnel-shaped nozzles at end points proximate to the chuck. The injector also has thermal expansion relief slots and small gaps between the injector and mating surfaces of the chamber and gas source. The temperature of the injector is controlled by a cooling liquid in cooling channels and electrical heaters in receptacles of the injector. The upper chamber body is funnel-shaped and curves downward at an end of the upper chamber body proximate to the chuck.Type: GrantFiled: April 1, 2005Date of Patent: October 30, 2012Assignee: Lam Research CorporationInventors: Ing-Yann Wang, Jaroslaw W. Winniczek, David J. Cooperberg, Erik A. Edelberg, Robert P. Chebi
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Publication number: 20100041238Abstract: A tunable multi-zone injection system for a plasma processing system for plasma processing of substrates such as semiconductor wafers. The system includes a plasma processing chamber, a substrate support for supporting a substrate within the processing chamber, a dielectric member having an interior surface facing the substrate support, the dielectric member forming a wall of the processing chamber, a gas injector fixed to part of or removably mounted in an opening in the dielectric window, the gas injector including a plurality of gas outlets supplying process gas at adjustable flow rates to multiple zones of the chamber, and an RF energy source such as a planar or non-planar spiral coil which inductively couples RF energy through the dielectric member and into the chamber to energize the process gas into a plasma state.Type: ApplicationFiled: October 23, 2009Publication date: February 18, 2010Applicant: Lam Research CorporationInventors: David J. Cooperberg, Vahid Vahedi, Douglas Ratto, Harmeet Singh, Neil Benjamin
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Publication number: 20030070620Abstract: A tunable multi-zone injection system for a plasma processing system for plasma processing of substrates such as semiconductor wafers. The system includes a plasma processing chamber, a substrate support for supporting a substrate within the processing chamber, a dielectric member having an interior surface facing the substrate support, the dielectric member forming a wall of the processing chamber, a gas injector fixed to part of or removably mounted in an opening in the dielectric window, the gas injector including a plurality of gas outlets supplying process gas at adjustable flow rates to multiple zones of the chamber, and an RF energy source such as a planar or non-planar spiral coil which inductively couples RF energy through the dielectric member and into the chamber to energize the process gas into a plasma state.Type: ApplicationFiled: December 21, 2001Publication date: April 17, 2003Inventors: David J. Cooperberg, Vahid Vahedi, Douglas Ratto, Harmeet Singh, Neil Benjamin