Patents by Inventor David J. Giuliani

David J. Giuliani has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Barrier height voltage reference
    Patent number: 4170818
    Abstract: A barrier height voltage reference includes two field-effect transistors which are substantially identical except for their gate-to-channel potential barrier characteristics and which are biased to carry equal drain currents at equal drain voltages. The resulting difference in potential between the gate contacts of the two field effect transistors produces a voltage reference which is substantially independent of operating point, supply potential, and temperature.
    Type: Grant
    Filed: October 3, 1977
    Date of Patent: October 16, 1979
    Assignee: Hewlett-Packard Company
    Inventors: Morley C. Tobey, Jr., David J. Giuliani, Peter B. Ashkin
  • Barrier height voltage reference
    Patent number: 4068134
    Abstract: A barrier height voltage reference includes two field-effect transistors which are substantially identical except for their gate-to-channel potential barrier characteristics and which are biased to carry equal drain currents at equal drain voltages. The resulting difference in potential between the gate contacts of the two field effect transistors produces a voltage reference which is substantially independent of operating point, supply potential, and temperature.
    Type: Grant
    Filed: April 7, 1976
    Date of Patent: January 10, 1978
    Assignee: Hewlett-Packard Company
    Inventors: Morley C. Tobey, Jr., David J. Giuliani, Peter B. Ashkin
  • Flat-band voltage reference
    Patent number: 3975648
    Abstract: A flat-band voltage reference includes two insulated-gate field-effect transistors, hereinafter IGFETs, which are substantially identical except for their flat-band voltage characteristics and which are biased to carry equal drain currents at equal drain voltages. The resulting difference in potential between the gate contacts of the IGFETs produces a voltage reference which is substantially independent of variances in operating points, supply potentials, and temperature.
    Type: Grant
    Filed: June 16, 1975
    Date of Patent: August 17, 1976
    Assignee: Hewlett-Packard Company
    Inventors: Morley C. Tobey, Jr., David J. Giuliani, Peter B. Ashkin