Abstract: Poly alkanolamines formed as the reaction products of secondary or tertiary alkanolamines, C8-C24 fatty acids, and shorter chain organic acids are provided, which serve as excellent petroleum/water emulsion breakers for water-in-oil emulsions and reverse oil-in-water emulsions. The polymers are preferably prepared using a reaction mixture of triethanolamine, tall oil fatty acids, and acetic acid.

Abstract: Improved emulsion breakers in the form of polyol acrylate polymers in water/oil emulsions have relatively high polymer contents and low inversion viscosities. The emulsion breakers can be prepared by mixing together acrylate monomer, polyol, water, liquid petroleum product, and emulsifier, followed by homogenization of the mixture; the latter is then subjected to free radical polymerization to polymerize the polyol and monomer in situ within the mixture.

Abstract: Poly alkanolamines formed as the reaction products of secondary or tertiary alkanolamines, C8-C24 fatty acids, and shorter chain organic acids are provided, which serve as excellent petroleum/water emulsion breakers for water-in-oil emulsions and reverse oil-in-water emulsions. The polymers are preferably prepared using a reaction mixture of triethanolamine, tall oil fatty acids, and acetic acid.

Abstract: Methods of synthesizing polymers including repeat units of the formula comprise the step of polymerizing repeat units of the formula in the presence of a free radical catalyst, where each R and each M is separately and independently selected from the group consisting of H, C1-C12 straight or branched chain alkyl, aryl, amine, amide, and ester groups, halides, and mixtures thereof, and n ranges from about 2-15.

Abstract: Improved anti-corrosion systems or products are disclosed containing individual epoxy and curing agent fractions dispersed in low VOC ester-containing dispersants. Preferably, the epoxy fraction is a conventional epoxy resin, whereas the curing agent is an imidazoline. The dispersant advantageously includes a mixture of carboxylic acid esters, such as alkyl glutarate, succinate, and adipate esters.

Abstract: Improved anti-corrosion systems or products are disclosed containing individual epoxy and curing agent fractions dispersed in low VOC ester-containing dispersants. Preferably, the epoxy fraction is a conventional epoxy resin, whereas the curing agent is imidazoline. the dispersant includes a mixture of carboxylic acid esters advantageously including glutarate, succinate, and adipate esters.

Abstract: Improved anti-corrosion systems or products are disclosed containing individual epoxy and curing agent fractions dispersed in low VOC ester-containing dispersants. Preferably, the epoxy fraction is a conventional epoxy resin, whereas the curing agent is an imidazoline. The dispersant advantageously includes a mixture of carboxylic acid esters, such as alkyl glutarate, succinate, and adipate esters.

Abstract: A system and method are disclosed for restricting process fluid flow within a showerhead assembly which includes a process chamber (12) with a showerhead assembly (20) disposed therein. The showerhead assembly (20) has a blocking assembly (24) disposed within the showerhead assembly (20) for restricting the flow of process fluid within the showerhead assembly (20). Restricting the flow of process fluid within the showerhead effectively restricts the flow of process fluid exiting a center portion (30) of showerhead assembly (20), directed at a substrate wafer (16) disposed within the process chamber (12).

Abstract: A semiconductor processing apparatus (10) is disclosed which includes a process chamber (12) and at least one substrate support (18) disposed within the process chamber (12) operable to support a substrate wafer (20). The semiconductor processing apparatus includes at least one showerhead assembly (14) disposed within the process chamber (12) facing the substrate support (18) and has a showerhead plate (16). The showerhead plate (16) has a plurality of passageways (17) extending therethrough for directing process fluid toward a substrate wafer (20) disposed on the substrate support (18). A blocking assembly (21) is disposed within the process chamber (12), the blocking assembly has an active position (32) between the showerhead assembly (14) and the substrate support (18) to restrict the flow of process fluid between the showerhead assembly (14) and the substrate support (18).

Abstract: A system and method are disclosed for restricting process fluid flow within a showerhead assembly which includes a process chamber (12) with a showerhead assembly (20) disposed therein. The showerhead assembly (20) has a blocking assembly (24) disposed within the showerhead assembly (20) for restricting the flow of process fluid within the showerhead assembly (20). Restricting the flow of process fluid within the showerhead effectively restricts the flow of process fluid exiting a center portion (30) of showerhead assembly (20), directed at a substrate wafer (16) disposed within the process chamber (12).

Abstract: A system and method are disclosed for restricting process fluid flow within a showerhead assembly which includes a process chamber (12) with a showerhead assembly (20) disposed therein. The showerhead assembly (20) has a blocking assembly (24) disposed within the showerhead assembly (20) for restricting the flow of process fluid within the showerhead assembly (20). Restricting the flow of process fluid within the showerhead effectively restricts the flow of process fluid exiting a center portion (30) of showerhead assembly (20), directed at a substrate wafer (16) disposed within the process chamber (12).

Abstract: A semiconductor processing apparatus (10) is disclosed which includes a process chamber (12) and at least one substrate support (18) disposed within the process chamber (12) operable to support a substrate wafer (20). The semiconductor processing apparatus includes at least one showerhead assembly (14) disposed within the process chamber (12) facing the substrate support (18) and has a showerhead plate (16). The showerhead plate (16) has a plurality of passageways (17) extending therethrough for directing process fluid toward a substrate wafer (20) disposed on the substrate support (18). A blocking assembly (21) is disposed within the process chamber (12), the blocking assembly has an active position (32) between the showerhead assembly (14) and the substrate support (18) to restrict the flow of process fluid between the showerhead assembly (14) and the substrate support (18).

Abstract: An improved method for forming a copper layer (100). After the copper seed layer (116) is formed, any oxidized copper (118) at the surface is electrochemically reduced back to copper rather than being dissolved. Copper (120) is then electrochemically deposited (ECD) over the intact seed layer (116).

Abstract: A system and method are disclosed for restricting process fluid flow within a showerhead assembly which includes a process chamber (12) with a showerhead assembly (20) disposed therein. The showerhead assembly (20) has a blocking assembly (24) disposed within the showerhead assembly (20) for restricting the flow of process fluid within the showerhead assembly (20). Restricting the flow of process fluid within the showerhead effectively restricts the flow of process fluid exiting a center portion (30) of showerhead assembly (20), directed at a substrate wafer (16) disposed within the process chamber (12).

Abstract: A semiconductor processing apparatus (10) is disclosed which includes a process chamber (12) and at least one substrate support (18) disposed within the process chamber (12) operable to support a substrate wafer (20). The semiconductor processing apparatus includes at least one showerhead assembly (14) disposed within the process chamber (12) facing the substrate support (18) and has a showerhead plate (16). The showerhead plate (16) has a plurality of passageways (17) extending therethrough for directing process fluid toward a substrate wafer (20) disposed on the substrate support (18). A blocking assembly (21) is disposed within the process chamber (12), the blocking assembly has an active position (32) between the showerhead assembly (14) and the substrate support (18) to restrict the flow of process fluid between the showerhead assembly (14) and the substrate support (18).

Abstract: A semiconductor processing apparatus (10) is disclosed which includes a process chamber (12) and at least one substrate support (18) disposed within the process chamber (12) operable to support a substrate wafer (20). The semiconductor processing apparatus includes at least one showerhead assembly (14) disposed within the process chamber (12) facing the substrate support (18) and has a showerhead plate (16). The showerhead plate (16) has a plurality of passageways (17) extending therethrough for directing process fluid toward a substrate wafer (20) disposed on the substrate support (18). A blocking assembly (21) is disposed within the process chamber (12), the blocking assembly has an active position (32) between the showerhead assembly (14) and the substrate support (18) to restrict the flow of process fluid between the showerhead assembly (14) and the substrate support (18).