Abstract: A bullet trap (1) is provided that connects to a muzzle end (5) of a weapon (3). The bullet trap (1) has a body (11) with a chamber (17) into which a bullet can be fired. The chamber (17) has a plurality of baffles (27) located one behind the other in an aligned series arrangement. The baffles (27) absorb kinetic energy of a fired bullet and enable the bullet to be trapped within the body (11). The baffles (27) have a thickness at a center of axis of travel of a bullet less than the thickness at a radially outwardly distant position to provide for a deformation at the center of a first of a series of baffles (27) before there will be engagement of a center of second and subsequent baffles (27).

Abstract: A bullet trap (1) is provided that connects to a muzzle end (5) of a weapon (3). The bullet trap (1) has a body (11) with a chamber (17) into which a bullet can be fired. The chamber (17) has a plurality of baffles (27) located one behind the other in an aligned series arrangement. The baffles (27) absorb kinetic energy of a fired bullet and enable the bullet to be trapped within the body (11). The baffles (27) have a thickness at a centre of axis of travel of a bullet less than the thickness at a radially outwardly distant position to provide for a deformation at the centre of a first of a series of baffles (27) before there will be engagement of a centre of second and subsequent baffles (27).

Abstract: A residue remover for removing polymeric material and etch residue includes 2-(2-aminoethylamino)-ethanol and optionally another two-carbon atom linkage alkanolamine compound, gallic acid or catechol, water, a polar organic solvent, and hydroxylamine. A process for removing photoresist or other residue from a substrate, such as an integrated circuit semiconductor wafer including titanium metallurgy, includes the steps of contacting the substrate with the above composition for a time and at a temperature sufficient to remove the photoresist or other residue from the substrate. Use of 2-(2-aminoethylamino)-ethanol in the composition and process provides superior residue removal without attacking titanium or other metallurgy on the substrate. The composition preferably has a flash point greater than about 130° C.

Abstract: A residue remover for removing polymeric material and etch residue includes 2-(2-aminoethylamino)-ethanol and optionally another two-carbon atom linkage alkanolamine compound, gallic acid or catechol, water, a polar organic solvent, and hydroxylamine. A process for removing photoresist or other residue from a substrate, such as an integrated circuit semiconductor wafer including titanium metallurgy, includes the steps of contacting the substrate with the above composition for a time and at a temperature sufficient to remove the photoresist or other residue from the substrate. Use of 2-(2-aminoethylamino)-ethanol in the composition and process provides superior residue removal without attacking titanium or other metallurgy on the substrate. The composition preferably has a flash point greater than about 130° C.

Abstract: A residue remover for removing polymeric material and etch residue includes 2-(2-aminoethylamino)-ethanol and optionally another two-carbon atom linkage alkanolamine compound, gallic acid or catechol, water, a polar organic solvent, and hydroxylamine. A process for removing photoresist or other residue from a substrate, such as an integrated circuit semiconductor wafer including titanium metallurgy, includes the steps of contacting the substrate with the above composition for a time and at a temperature sufficient to remove the photoresist or other residue from the substrate. Use of 2-(2-aminoethylamino)-ethanol in the composition and process provides superior residue removal without attacking titanium or other metallurgy on the substrate. The composition preferably has a flash point greater than about 130° C.