Abstract: Systems and methods are disclosed for using second-harmonic generation of light to monitor the manufacturing process for changes that can affect the performance or yield of produced devices and/or determining critical dimensions of the produced device.

Abstract: A system is disclosed for the examination and inspection of integrated devices such as integrated circuits using 3-D laminography. X-rays are transmitted through the integrated device, and are incident on a photoemissive structure that absorbs x-rays and emits electrons. The electrons emitted by the photoemissive structure are shaped by an electron optical system to form a magnified image of the emitted electrons on a detector. This magnified image is then recorded and processed. In some embodiments, the incidence angle of the x-rays is varied to gather multiple images that allow internal three-dimensional structures of the integrated device to be determined using computed laminography. In some embodiments, the recorded images are compared with reference data to enable inspection for manufacturing quality control.

Abstract: Systems and methods are disclosed for using second-harmonic generation of light to monitor the manufacturing process for changes that can affect the performance or yield of produced devices and/or determining critical dimensions of the produced device.

Abstract: A system is disclosed for the examination and inspection of integrated devices such as integrated circuits using 3-D laminography. X-rays are transmitted through the integrated device, and are incident on a photoemissive structure that absorbs x-rays and emits electrons. The electrons emitted by the photoemissive structure are shaped by an electron optical system to form a magnified image of the emitted electrons on a detector. This magnified image is then recorded and processed. In some embodiments, the incidence angle of the x-rays is varied to gather multiple images that allow internal three-dimensional structures of the integrated device to be determined using computed laminography. In some embodiments, the recorded images are compared with reference data to enable inspection for manufacturing quality control.

Abstract: An apparatus is disclosed for the examination and inspection of integrated devices such as integrated circuits. X-rays are transmitted through the integrated device, and are incident on a photoemissive structure that absorbs x-rays and emits electrons. The electrons emitted by the photoemissive structure are shaped by an electron optical system to form a magnified image of the emitted electrons on a detector. This magnified image is then recorded and processed. For some embodiments of the invention, the photoemissive structure is deposited directly onto the integrated device. In some embodiments, the incidence angle of the x-rays is varied to allow internal three-dimensional structures of the integrated device to be determined. In some embodiments, the recorded image is compared with a reference data to enable inspection for manufacturing quality control.

Abstract: In one embodiment, a computing system may obtain a high-resolution X-ray image and a number of low-resolution X-ray images of an object of interest. The system may divide each of the low-resolution X-ray images into a number of low-resolution patches. Each low-resolution patch may be associated with a portion of the object of interest. The system may input a set of low-resolution patches associated with a same portion of the object of interest into a machine-learning model. Each low-resolution patch of the set may be from a different low-resolution X-ray image. The machine-learning model may output a high-resolution patch for the same portion of the object of interest. The system may compare the high-resolution patch outputted by the machine-learning model to a corresponding portion of the high-resolution X-ray image of the object of interest and adjust one or more parameters of the machine-learning model based on the comparison.

Abstract: The presently-disclosed technology improves the resolution of an x-ray microscope so as to obtain super-resolution x-ray images having resolutions beyond the maximum normal resolution of the x-ray microscope. Furthermore, the disclosed technology provides for the rapid generation of the super-resolution x-ray images and so enables real-time super-resolution x-ray imaging for purposes of defect detection, for example. A method of super-resolution x-ray imaging using a super-resolving patch classifier is provided. In addition, a method of training the super-resolving patch classifier is disclosed. Other embodiments, aspects and features are also disclosed.

Abstract: The presently-disclosed technology improves the resolution of an x-ray microscope so as to obtain super-resolution x-ray images having resolutions beyond the maximum normal resolution of the x-ray microscope. Furthermore, the disclosed technology provides for the rapid generation of the super-resolution x-ray images and so enables real-time super-resolution x-ray imaging for purposes of defect detection, for example. A method of super-resolution x-ray imaging using a super-resolving patch classifier is provided. In addition, a method of training the super-resolving patch classifier is disclosed. Other embodiments, aspects and features are also disclosed.

Abstract: The presently-disclosed technology improves the resolution of an x-ray microscope so as to obtain super-resolution x-ray images having resolutions beyond the maximum normal resolution of the x-ray microscope. Furthermore, the disclosed technology provides for the rapid generation of the super-resolution x-ray images and so enables real-time super-resolution x-ray imaging for purposes of defect detection, for example. A method of super-resolution x-ray imaging using a super-resolving patch classifier is provided. In addition, a method of training the super-resolving patch classifier is disclosed. Other embodiments, aspects and features are also disclosed.

Abstract: An apparatus is disclosed for the examination and inspection of integrated devices such as integrated circuits. X-rays are transmitted through the integrated device, and are incident on a photoemissive structure that absorbs x-rays and emits electrons. The electrons emitted by the photoemissive structure are shaped by an electron optical system to form a magnified image of the emitted electrons on a detector. This magnified image is then recorded and processed. For some embodiments of the invention, the photoemissive structure is deposited directly onto the integrated device. In some embodiments, the incidence angle of the x-rays is varied to allow internal three-dimensional structures of the integrated device to be determined. In some embodiments, the recorded image is compared with a reference data to enable inspection for manufacturing quality control.

Abstract: The presently-disclosed technology improves the resolution of an x-ray microscope so as to obtain super-resolution x-ray images having resolutions beyond the maximum normal resolution of the x-ray microscope. Furthermore, the disclosed technology provides for the rapid generation of the super-resolution x-ray images and so enables real-time super-resolution x-ray imaging for purposes of defect detection, for example. A method of super-resolution x-ray imaging using a super-resolving patch classifier is provided. In addition, a method of training the super-resolving patch classifier is disclosed. Other embodiments, aspects and features are also disclosed.

Abstract: A method and apparatus for inspection and review of defects is disclosed wherein data gathering is improved. In one embodiment, multiple or segmented detectors are used in a particle beam system.

Abstract: An apparatus is disclosed for the examination and inspection of integrated devices such as integrated circuits. X-rays are transmitted through the integrated device, and are incident on a photoemissive structure that absorbs x-rays and emits electrons. The electrons emitted by the photoemissive structure are shaped by an electron optical system to form a magnified image of the emitted electrons on a detector. This magnified image is then recorded and processed. In some embodiments, the integrated device and photoemissive structure are independently mounted and controlled. In other embodiments, the photoemissive device is deposited directly onto the integrated device. In some embodiments, the incidence angle of the x-rays is varied to allow internal three-dimensional structures of the integrated device to be determined. In other embodiments, the recorded image is compared with a reference data to enable inspection for manufacturing quality control.

Abstract: An x-ray source is described. During operation of the x-ray source, an electron source emits a beam of electrons. This beam of electrons is focused to a spot on a target by a magnetic focusing lens. In particular, the magnetic focusing lens includes an immersion lens in which a peak in a magnitude of an associated magnetic field occurs proximate to a plane of the target. Moreover, in response to receiving the beam of focused electrons, the target provides a transmission source of x-rays.

Abstract: An x-ray source is described. During operation of the x-ray source, an electron source emits a beam of electrons. This beam of electrons is focused to a spot on a target by a magnetic focusing lens. In response to receiving the beam of focused electrons, the target provides a transmission source of x-rays. Moreover, a repositioning mechanism selectively repositions the beam of focused electrons to different locations on a surface of the target based on a feedback parameter associated with operation of the x-ray source. This feedback parameter may be based on: an intensity of the x-rays output by the x-ray source; a position of the x-rays output by the x-ray source; an elapsed time during operation of the x-ray source; a cross-sectional shape of the x-rays output by the x-ray source; and/or a spot size of the x-rays output by the x-ray source.

Abstract: During operation of an x-ray source, an electron source emits a beam of electrons. Moreover, a repositioning mechanism selectively repositions the beam of electrons on a surface of a target based on a feedback parameter, where a location of the beam of electrons on the surface of the target defines a spot size of x-rays output by the x-ray source. In response to receiving the beam of electrons, the target provides a transmission source of the x-rays. Furthermore, a beam-parameter detector provides the feedback parameter based on a physical characteristic associated with the beam of electrons and/or the x-rays output by the x-ray source. This physical characteristic may include: at least a portion of an optical spectrum emitted by the target, secondary electrons emitted by the target based on a cross-sectional shape of the beam of electrons; an intensity of the x-rays output by the target; and/or a current from the target.

Abstract: An electron microscope is described. This electron microscope includes an electron emitter that has an evaporation or sublimation rate that is significantly less than that of tungsten at the reduced pressures around the electron emitter during operation of the electron microscope. As a consequence, the electron microscope may be able to operate at reduced pressures that are much larger than those in existing electron microscopes. For example, at least during the operation the reduced pressure in the electron microscope may be greater than or equal to a medium vacuum. This capability may allow the electron microscope to use a roughing pump to provide the reduced pressure, thereby reducing the cost and complexity of the electron microscope, and improving its reliability. In addition, the size of the electron microscope may be reduced, which may enable a hand-held or portable version of the electron microscope.

Abstract: An apparatus is disclosed for the examination and inspection of integrated devices such as integrated circuits. X-rays are transmitted through the integrated device, and are incident on a photoemissive structure that absorbs x-rays and emits electrons. The electrons emitted by the photoemissive structure are shaped by an electron optical system to form a magnified image of the emitted electrons on a detector. This magnified image is then recorded and processed. In some embodiments, the integrated device and photoemissive structure are independently mounted and controlled. In other embodiments, the photoemissive device is deposited directly onto the integrated device. In some embodiments, the incidence angle of the x-rays is varied to allow internal three-dimensional structures of the integrated device to be determined. In other embodiments, the recorded image is compared with a reference data to enable inspection for manufacturing quality control.

Abstract: An x-ray source is described. During operation of the x-ray source, an electron source emits a beam of electrons. This beam of electrons is focused to a spot on a target by a magnetic focusing lens. In particular, the magnetic focusing lens includes an immersion lens in which a peak in a magnitude of an associated magnetic field occurs proximate to a plane of the target. Moreover, in response to receiving the beam of focused electrons, the target provides a transmission source of x-rays.

Abstract: An x-ray source is described. This x-ray source includes an electron source with a refractory binary compound having a melting temperature greater than that of tungsten. For example, the refractory binary compound may include: hafnium carbide, zirconium carbide, tantalum carbide, lanthanum hexaboride and/or compounds that include two or more of these elements.