Abstract: A method of retreading a tire. The method includes the steps of applying a primer to an inner surface of a circumferential tread and applying the primer to an outer surface of a tire casing; applying an adhesive to the primer disposed on the inner surface and the primer disposed on the outer surface; applying the circumferential tread to the tire casing so the inner surface contacts the outer surface and a bondline edge forms circumferentially about the tire casing proximate to a shoulder area of the tire casing; and coupling a moisture reservoir to the circumferential tread proximate to the bondline edge.

Abstract: A carbon black pellet comprising a plurality of agglomerates, aggregates, or primary carbon black particles and a binder including a functional polymer.

Abstract: A carbon black pellet comprising a plurality of agglomerates, aggregates, or primary carbon black particles and a binder including a functional polymer.

Abstract: A carbon black pellet comprising a plurality of agglomerates, aggregates, or primary carbon black particles and a binder including a functional polymer.

Abstract: A method of preparing a precured tire tread includes forming a green tire tread strip having a top surface and a bottom surface. The method also includes curing the green tire tread strip to form a precured tire tread having a top surface and a bottom surface. The method further includes abrasive blasting the bottom surface of the precured tire tread, air blasting the bottom surface of the precured tire tread, and washing the bottom surface of the precured tire tread with a liquid.

Abstract: Pneumatic tires having a tread containing a plurality of sipes that extend radially inward into one or more layers of the tread portion are described as having improved the sipe tear resistance. Increased sipe tear resistance at or near the closed end of the sipes in a tire tread can enhance the performance of the tire during operation and throughout its service life. The rubber compositions of the one or more layers of the tread portion in contact with a sipe or its terminating end portion contain talc to increase the resistance to tearing at or near the end portion of a sipe during operation.

Abstract: An improved system based on the Czochralski process for continuous growth of a single crystal ingot comprises a low aspect ratio, large diameter, and substantially flat crucible, including an optional weir surrounding the crystal. The low aspect ratio crucible substantially eliminates convection currents and reduces oxygen content in a finished single crystal silicon ingot. A separate level controlled silicon pre-melting chamber provides a continuous source of molten silicon to the growth crucible advantageously eliminating the need for vertical travel and a crucible raising system during the crystal pulling process. A plurality of heaters beneath the crucible establish corresponding thermal zones across the melt. Thermal output of the heaters is individually controlled for providing an optimal thermal distribution across the melt and at the crystal/melt interface for improved crystal growth. Multiple crystal pulling chambers are provided for continuous processing and high throughput.

Abstract: A carbon black pellet comprising a plurality of agglomerates, aggregates, or primary carbon black particles and a binder including a hot-polymerized styrene-butadiene copolymer.

Abstract: An improved system based on the Czochralski process for continuous growth of a single crystal ingot comprises a low aspect ratio, large diameter, and substantially flat crucible, including an optional weir surrounding the crystal. The low aspect ratio crucible substantially eliminates convection currents and reduces oxygen content in a finished single crystal silicon ingot. A separate level controlled silicon pre-melting chamber provides a continuous source of molten silicon to the growth crucible advantageously eliminating the need for vertical travel and a crucible raising system during the crystal pulling process. A plurality of heaters beneath the crucible establish corresponding thermal zones across the melt. Thermal output of the heaters is individually controlled for providing an optimal thermal distribution across the melt and at the crystal/melt interface for improved crystal growth. Multiple crystal pulling chambers are provided for continuous processing and high throughput.

Abstract: A carbon black pellet comprising a plurality of agglomerates, aggregates, or primary carbon black particles and a binder including a hot-polymerized styrene-butadiene copolymer.

Abstract: A carbon black pellet comprising a plurality of agglomerates, aggregates, or primary carbon black particles and a binder including a functional polymer.

Abstract: A precured tire tread includes a top surface having a plurality of tread elements thereon, a bottom surface, a front surface, and a rear surface. At least one of the front surface and the rear surface is a roughened surface that is substantially devoid of nonstick surface agents.

Abstract: A method of preparing a precured tire tread includes forming a green tire tread strip having a top surface and a bottom surface. The method also includes curing the green tire tread strip to form a precured tire tread having a top surface and a bottom surface. The method further includes abrasive blasting the bottom surface of the precured tire tread, air blasting the bottom surface of the precured tire tread, and washing the bottom surface of the precured tire tread with a liquid.

Abstract: An improved system based on the Czochralski process for continuous growth of a single crystal ingot comprises a low aspect ratio, large diameter, and substantially flat crucible, including an optional weir surrounding the crystal. The low aspect ratio crucible substantially eliminates convection currents and reduces oxygen content in a finished single crystal silicon ingot. A separate level controlled silicon pre-melting chamber provides a continuous source of molten silicon to the growth crucible advantageously eliminating the need for vertical travel and a crucible raising system during the crystal pulling process. A plurality of heaters beneath the crucible establish corresponding thermal zones across the melt. Thermal output of the heaters is individually controlled for providing an optimal thermal distribution across the melt and at the crystal/melt interface for improved crystal growth. Multiple crystal pulling chambers are provided for continuous processing and high throughput.

Abstract: A method is disclosed for continuous CZ crystal growing wherein one or more crystal ingots are pulled into a growth chamber from a crystal/melt interface defined in a crucible containing molten crystalline material that is continuously replenished by crystalline feedstock. The method includes separating the molten crystalline material, controlling the flow of the molten crystalline material and defining an annular space with respect to sidewalls of a heat shield in the chamber.

Abstract: A process for retreading a tire, the process comprising the steps of providing a liquid rubber cement composition including a solvent, providing a release liner, applying the liquid cement composition to the release liner to form a wet film on said release liner, allowing the solvent to evaporate to thereby convert the wet film to a dried film on the release liner and thereby form a dry-transfer cement composite, providing a cured rubber component having first and second planar surfaces, where the first planar surface includes a tread pattern, adhering the dried film to the second planar surface of the cured rubber component to thereby form a tread composite, and preparing a retreaded tire using the tread composite.

Abstract: In a Czochralski process for growing single crystal silicon ingots, a system is provided for adding solid material to the liquid silicon during crystal growth for the purpose of directly controlling the latent heat of fusion with respect to a crystal melt interface. In contrast to the standard method for controlling power to the crucible heaters, the present system has been found to be much more effective for controlling melt temperature in the crucible, especially in heavily insulated systems. The system provides the advantages of reducing the electric power required to operate a Czochralski grower, while increasing the speed with which the melt temperature can be raised or lowered in a controlled manner.

Abstract: A method is disclosed for continuous CZ crystal growing wherein one or more crystal ingots are pulled into a growth chamber from a crystal/melt interface defined in a crucible containing molten crystalline material that is continuously replenished by crystalline feedstock. The method includes separating the molten crystalline material, controlling the flow of the molten crystalline material and defining an annular space with respect to sidewalls of a heat shield in the chamber.

Abstract: An improved system based on the Czochralski process for continuous growth of a single crystal ingot comprises a low aspect ratio, large diameter, and substantially flat crucible, including an optional weir surrounding the crystal. The low aspect ratio crucible substantially eliminates convection currents and reduces oxygen content in a finished single crystal silicon ingot. A separate level controlled silicon pre-melting chamber provides a continuous source of molten silicon to the growth crucible advantageously eliminating the need for vertical travel and a crucible raising system during the crystal pulling process. A plurality of heaters beneath the crucible establish corresponding thermal zones across the melt. Thermal output of the heaters is individually controlled for providing an optimal thermal distribution across the melt and at the crystal/melt interface for improved crystal growth. Multiple crystal pulling chambers are provided for continuous processing and high throughput.

Abstract: A weir is extended vertically to define an optimal annular gap between the top of the weir and the underside of a super-adjacent heat shield. The annular gap provides a high velocity stream of argon gas to be directed from the growth region to the melt region to substantially eliminate the transport of airborne particles from the melt region to the growth region. The tall weir may be configured as a modular, reusable weir extension supportably engaged with an outer (and/or inner) weir.