Abstract: A new ensemble of logic elements organized in an array and a method of forming the same wherein the architecture includes a main field of transistor elements formed on a substrate material. A group of load transistors and an array of logic gates are formed on the substrate and are located within the main field of transistors. At least one routing channel is provided in the main field, and an input/output structure is located on the substrate. A region of flip-flop elements, also located within the main field, may be provided. Preferably, a plurality of such groups, arrays and regions are formed in parallel strips extending across the main field, and a perpendicular bussing channel also extends across the field to divide the main field into component arrays. The logic gates may be configurable structures or dedicated inverters, and a plurality of input/output structures may be employed. The method includes the electrical interconnection of these elements into logic terms to form an integrated circuit.

Abstract: A transistor cell element that may be used alone or in a matrix array in large scale integrated circuits includes a substrate onto which an isolation region is fabricated. Inner and outer charge carrier regions having a high density of first charge carriers is formed in the substrate to define a channel region therebetween. The inner carrier region is adjacent the isolation region so that the channel region extends in a closed loop from said isolation region, around the inner carrier region and back to the isolation region, with the outer carrier region surrounding the isolation and channel regions. The channel region has a low density of second charge carriers, having opposite charge than the first charge carriers, and a gate structure including a conductive band and an insulating layer is formed over the channel region. In one alternate embodiment, additional isolation regions may be provided with these regions interrupting the channel region.