Abstract: An X-ray imaging device and alignment/scanning system include at least one multilayer X-ray mirror mounted on a multi-axis adjustable mirror mount pivotable about a scanning axis. A mirror scanner is coupled with the mirror mount and synchronized with the X-ray source so that the mirror scanner moves the mirror mount about the scanning axis. The invention may include a plurality of mirrors, optionally in a stack, and preferably including first and second mirrors respectively adapted to reflect X-rays of first and second energies. A movable attenuation plate having a window selectively allows X-rays to be transmitted by one of the mirrors and blocks X-rays from the other mirror(s). Sets of the mirrors may be configured in blocks or interspersed. The mirror scanner may be operable at variable speeds to enable selective control of the scanning speed of the mirror.

Abstract: An aperiodic multilayer structure (2, 2?) comprising a plurality of alternating layers of a first (4, 4?) and a second (6, 6?) material and a capping layer (10, 10?) covering these alternating layers, wherein the structure (2, 2?) is characterized in that the thickness of the alternating layers chaotically varies in at least a portion of said structure (2, 2?). The invention further comprises design method comprising the step of define a time interval and a first plurality of periodic multilayer structures (A), then calculate a first merit function (?R(?)10*I(?)d?) and define a first domain for each first structures. The method further includes the step of apply at least one random mutation to each first structures inside the associated first domain and calculate a second merit function (?R(?)10*I(?)d? for the at least one mutation.

Abstract: An X-ray optical alignment system for X-ray imaging devices includes a visible-light point source and a multi-axis positioner therefor, fixedly mounted with respect to the X-ray focal spot. A mirror or beamsplitter is fixedly mounted with respect to the X-ray focal spot and disposed in the beam path of the X-ray source. The beamsplitter reflects light emitted from the light source and transmits X-rays emitted from the X-ray source. A first X-ray attenuating grid is fixedly but removably mountable with respect to the X-ray source, having a first X-ray attenuation pattern; and a second X-ray attenuating grid is adjustably mountable with respect to the first grid having a second X-ray attenuating pattern corresponding to the first X-ray attenuating pattern. When the grids are aligned, their attenuating patterns are also aligned and allow X-rays from the X-ray source and light reflected from the beamsplitter to pass therethrough.

Abstract: An X-ray imaging device and alignment/scanning system include at least one multilayer X-ray mirror mounted on a multi-axis adjustable mirror mount pivotable about a scanning axis. A mirror scanner is coupled with the mirror mount and synchronized with the X-ray source so that the mirror scanner moves the mirror mount about the scanning axis. The invention may include a plurality of mirrors, optionally in a stack, and preferably including first and second mirrors respectively adapted to reflect X-rays of first and second energies. A movable attenuation plate having a window selectively allows X-rays to be transmitted by one of the mirrors and blocks X-rays from the other mirror(s). Sets of the mirrors may be configured in blocks or interspersed. The mirror scanner may be operable at variable speeds to enable selective control of the scanning speed of the mirror.

Abstract: An X-ray optical alignment system for X-ray imaging devices includes a visible-light point source and a multi-axis positioner therefor, fixedly mounted with respect to the X-ray focal spot. A mirror or beamsplitter is fixedly mounted with respect to the X-ray focal spot and disposed in the beam path of the X-ray source. The beamsplitter reflects light emitted from the light source and transmits X-rays emitted from the X-ray source. A first X-ray attenuating grid is fixedly but removably mountable with respect to the X-ray source, having a first X-ray attenuation pattern; and a second X-ray attenuating grid is adjustably mountable with respect to the first grid having a second X-ray attenuating pattern corresponding to the first X-ray attenuating pattern. When the grids are aligned, their attenuating patterns are also aligned and allow X-rays from the X-ray source and light reflected from the beamsplitter to pass therethrough.

Abstract: X-ray reflective multilayer films with greatly reduced surface roughness and film stress, and smoothing layers for reducing surface roughness of X-ray reflective film substrates, are produced by reactive sputter deposition using a sputter gas having nitrogen in combination with at least one inert gas. The nitrogen is incorporated into the film in a non-stoichiometric manner. Preferably, a gas fraction of the nitrogen is between approximately 5% and approximately 25%. The inert gas is preferably argon. In one embodiment, the materials to be reactively sputtered may include tungsten and boron carbide in alternating layers of the multilayer film. Alternatively, nickel and boron carbide or cobalt and carbon may be used in alternating layers of the multilayer film. Boron carbide may serve as the material for the smoothing layer.

Abstract: A process for controlling the stress of multilayer films formed on a substrate is disclosed. A plurality of periods, each period having at least two layers of material wherein one of the layers of material is under compressive stress and the other layer of material is under tensile stress, are formed in a substrate. The stress in the multilayer film is controlled by selecting a thickness for the layer under compressive stress and a thickness for the layer under tensile stress that will provide a multilayer film of the desired stress. The thickness of each layer is about 0.5 nm to about 10 nm. Multilayer films with a stress of about -50 MPa to about 50 MPa are obtained using the present process. The present invention is also directed to masks with such multilayer films.

Abstract: The invention in one aspect involves a method for repairing an optical system. The optical system includes at least one optical element which comprises, in turn, a substrate having a principal surface, and a multilayer coating overlying the principal surface. The substrate comprises a first material, and the multilayer coating comprises plural second and at least third material layers in alternation. The method includes the steps of removing the multilayer coating from the substrate, and redepositing a new multilayer coating on the substrate. The old multilayer coating is removed in a single etching step while preserving the quality of the principal surface to such an extent that the peak reflectivity of the new multilayer coating is at least 80% the reflectivity of the old multilayer coating.

Abstract: In one aspect, the invention involves an optical element in an x-ray imaging system. The element comprises a substrate overlain by a multilayer coating. The multilayer coating comprises plural first and at least second material layers in alternation. This coating is soluble in at least one etchant solution at an etching temperature less than 100.degree. C. The optical element further comprises a barrier layer intermediate the substrate and the multilayer coating. The barrier layer is relatively insoluble in the etchant solution at the etching temperature. In a second aspect of the invention, the optical element comprises a substrate and a multilayer coating as described above, and further comprises a release layer that underlies the multilayer coating. The release layer comprises a material that is relatively soluble in at least one etchant solution at an etching temperature less than 100.degree. C. In contrast to release layers of the prior art, the inventive release layer comprises germanium.

Abstract: We have found a way to, e.g., substantially increase the number of layers in a pseudomorphic strained layer semiconductor mirror over the number obtainable in an analogous conventional mirror, making it possible to obtain pseudomorphic strained layer mirrors of increased reflectance. Such a pseudomorphic mirror consists of alternating layers of a first and a second semiconductor material (e.g., Ge.sub.x Si.sub.1-x /Si), of thickness t.sub.1 and t.sub.2, and refractive index n.sub.1 and n.sub.2, respectively, with the number of layer pairs chosen such that the mirror thickness is less than or equal to the "critical thickness" L.sub.c. For thicknesses >L.sub.c the mirror will contain dislocations.An article according to the invention comprises a mirror whose layer thicknesses are chosen such that n.sub.1 t.sub.1 .noteq.n.sub.2 t.sub.2, with n.sub.1 t.sub.1 +n.sub.2 t.sub.2 =p.lambda./2, (p being an odd integer, typically 1). In other words, the optical thickness of the layers is not the conventional p.