Abstract: An electrical assembly comprises a housing having a frame portion. A substrate has a first side and a second side opposite the first side. A subscriber identification module is mounted to a first side of the substrate and has device terminals. A first connector portion is secured to the second side of the substrate and has connector terminals. A retainer is associated with an interior of the frame portion. The retainer retains at least one of the substrate and the first connector portion. Conductive (e.g., conductive vias or through-holes) in the substrate connect the connector terminals to the device terminals.

Abstract: An electrical assembly comprises a housing having a frame portion. A substrate has a first side and a second side opposite the first side. A subscriber identification module is mounted to a first side of the substrate and has device terminals. A first connector portion is secured to the second side of the substrate and has connector terminals. A retainer is associated with an interior of the frame portion. The retainer retains at least one of the substrate and the first connector portion. Conductive (e.g., conductive vias or through-holes) in the substrate connect the connector terminals to the device terminals.

Abstract: In accordance with one embodiment, an electrical assembly comprises a housing having a recess in the housing. A first connector portion is securable to the housing. The connector portion comprises a dielectric body and connector terminals. A subscriber identification module is located in or mounted in the housing and has device terminals. A substrate comprises a first section that intersects at an angle a second section. The first section comprises first conductive traces electrically connected to the device terminals. The second section comprises second conductive traces electrically connected to the connector terminals. Conductors are electrically connected to the first conductive traces and the second conductive traces.

Abstract: The assembly has a subscriber identification module comprising a housing with a recess disposed in the housing. An electrical connector portion is secured to the housing. The connector portion comprises a dielectric body and connector terminals. A subscriber identification module is housed in the housing, where the subscriber identification module has device terminals. A conductor or flexible substrate electrically connects the connector terminals to the device terminals. A protective filler overlies the subscriber identification module and at least part of the conductor or the flexible substrate.

Abstract: An electrical assembly comprises a housing, where the housing has an inner housing and a removable outer housing removably connected to the inner housing. A first connector portion is secured to the inner housing. The first connector portion comprises a dielectric body and connector terminals. A subscriber identification module is supported by the inner housing. The subscriber identification module has device terminals. A group of conductors or a conductor assembly supports an electrical connection of the connector terminals to the device terminals. A holder retains the subscriber identification module with respect to the inner housing.

Abstract: Fuser assemblies for fusing toner on media, xerographic apparatuses, and methods of fusing toner on media in xerographic apparatuses are disclosed. An embodiment of the fuser assemblies includes a fuser belt; a first roll supporting the fuser belt, the first roll including a first heating element and a second heating element extending axially along the first roll and along a width of the fuser belt, the first heating element being longer than the second heating element; and a second roll supporting the fuser belt, the second roll including a third heating element and a fourth heating element extending axially along the second roll and along the width of the fuser belt, the third heating element being longer than the fourth heating element.

Abstract: A processor has a fetch unit and a branch execution unit. The fetch unit has a branch predictor. The branch predictor has a branch target buffer and a branch direction predictor. A wake value is a number of instruction fetches that is predicted to be performed after a fetch of a branch. Thus, for a first branch, for example, a first wake number is predicted. A low power mode of the branch predictor is enabled for a duration of the first wake value in response to hit in the branch target buffer in which the hit is in response to the first branch.

Abstract: This invention relates to high nucleation density organometallic ruthenium compounds. This invention also relates to a process for producing a high nucleation density organometallic ruthenium compound comprising reacting a bis(substituted-pentadienyl)ruthenium compound with a substituted cyclopentadiene compound under reaction conditions sufficient to produce said high nucleation density organometallic ruthenium compound. This invention further relates to a method for producing a film, coating or powder by decomposing a high nucleation density organometallic ruthenium compound precursor, thereby producing the film, coating or powder.

Abstract: Fuser assemblies for fusing toner on media, xerographic apparatuses, and methods of fusing toner on media in xerographic apparatuses are disclosed. An embodiment of the fuser assemblies includes a fuser belt; a first roll supporting the fuser belt, the first roll including a first heating element and a second heating element extending axially along the first roll and along a width of the fuser belt, the first heating element being longer than the second heating element; and a second roll supporting the fuser belt, the second roll including a third heating element and a fourth heating element extending axially along the second roll and along the width of the fuser belt, the third heating element being longer than the fourth heating element.

Abstract: A rope cleat secures a rope to a structure. The cleat has a body with opposite first and second portions joined along a longitudinal central plane. The body has a U-shaped cavity inside it tapering between a large entrance leg and a smaller exit leg, which communicate at a confluent portion. A flange is integrally attached to the body first portion. The flange is mounted against the structure through a mounting hole. The flange has an entrance hole and an exit hole spaced apart and extending through the flange. The rope is easily inserted into the large entrance hole, through the U-shaped cavity, and out the smaller exit hole. A knot is then tied to secure the rope in the cleat. The cleat has registration pins on one body portion, and corresponding registration holes on the opposite portion. The pins align the body first and second portions for assembly with a screw.

Abstract: This invention relates to organometallic compounds having the formula (L1)yM(L2)z wherein M is a metal or metalloid, L1 is the same or different and is (i) a substituted or unsubstituted anionic 4 electron donor ligand or (ii) a substituted or unsubstituted anionic 4 electron donor ligand with a pendant neutral 2 electron donor moiety, L2 is the same or different and is (i) a substituted or unsubstituted anionic 2 electron donor ligand or (ii) a substituted or unsubstituted neutral 2 electron donor ligand; y is an integer of 2; and z is an integer of from 0 to 2; and wherein the sum of the oxidation number of M and the electric charges of L1 and L2 is equal to 0; a process for producing the organometallic compounds, and a method for producing a film or coating from the organometallic compounds. The organometallic compounds are useful in semiconductor applications as chemical vapor or atomic layer deposition precursors for film depositions.

Abstract: This invention relates to organometallic compounds having the formula (L1)M(L2)y wherein M is a metal or metalloid, L1 is a substituted or unsubstituted anionic 6 electron donor ligand, L2 is the same or different and is (i) a substituted or unsubstituted anionic 2 electron donor ligand, (ii) a substituted or unsubstituted anionic 4 electron donor ligand, (iii) a substituted or unsubstituted neutral 2 electron donor ligand, or (iv) a substituted or unsubstituted anionic 4 electron donor ligand with a pendant neutral 2 electron donor moiety; and y is an integer of from 1 to 3; and wherein the sum of the oxidation number of M and the electric charges of L1 and L2 is equal to 0; a process for producing the organometallic compounds, and a method for producing a film or coating from the organometallic compounds. The organometallic compounds are useful in semiconductor applications as chemical vapor or atomic layer deposition precursors for film depositions.

Abstract: This invention relates to organometallic compounds having the formula (L1)M(L2)y wherein M is a metal or metalloid, L1 is a substituted or unsubstituted anionic 6 electron donor ligand, L2 is the same or different and is (i) a substituted or unsubstituted anionic 2 electron donor ligand, (ii) a substituted or unsubstituted anionic 4 electron donor ligand, (iii) a substituted or unsubstituted neutral 2 electron donor ligand, or (iv) a substituted or unsubstituted anionic 4 electron donor ligand with a pendant neutral 2 electron donor moiety; and y is an integer of from 1 to 3; and wherein the sum of the oxidation number of M and the electric charges of L1 and L2 is equal to 0; a process for producing the organometallic compounds, and a method for producing a film or coating from the organometallic compounds. The organometallic compounds are useful in semiconductor applications as chemical vapor or atomic layer deposition precursors for film depositions.

Abstract: This invention relates to organometallic compounds having the formula (L1)M(L2)y wherein M is a metal or metalloid, L1 is a substituted or unsubstituted anionic 6 electron donor ligand, L2 is the same or different and is (i) a substituted or unsubstituted anionic 2 electron donor ligand, (ii) a substituted or unsubstituted anionic 4 electron donor ligand, (iii) a substituted or unsubstituted neutral 2 electron donor ligand, or (iv) a substituted or unsubstituted anionic 4 electron donor ligand with a pendant neutral 2 electron donor moiety; and y is an integer of from 1 to 3; and wherein the sum of the oxidation number of M and the electric charges of L1 and L2 is equal to 0; a process for producing the organometallic compounds, and a method for producing a film or coating from the organometallic compounds. The organometallic compounds are useful in semiconductor applications as chemical vapor or atomic layer deposition precursors for film depositions.

Abstract: This invention relates to organometallic compounds having the formula L1ML2 wherein M is a metal or metalloid, L1 is a substituted or unsubstituted 6 electron donor anionic ligand, and L2 is a substituted or unsubstituted 6 electron donor anionic ligand, wherein L1 and L2 are the same or different, a process for producing the organometallic compounds, and a method for producing a film or coating from the organometallic compounds. The organometallic compounds are useful in semiconductor applications as chemical vapor or atomic layer deposition precursors for film depositions.

Abstract: This invention relates to organometallic compounds having the formula (L1)yM(L2)z wherein M is a metal or metalloid, L1 is the same or different and is (i) a substituted or unsubstituted anionic 4 electron donor ligand or (ii) a substituted or unsubstituted anionic 4 electron donor ligand with a pendant neutral 2 electron donor moiety, L2 is the same or different and is (i) a substituted or unsubstituted anionic 2 electron donor ligand or (ii) a substituted or unsubstituted neutral 2 electron donor ligand; y is an integer of 2; and z is an integer of from 0 to 2; and wherein the sum of the oxidation number of M and the electric charges of L1 and L2 is equal to 0; a process for producing the organometallic compounds, and a method for producing a film or coating from the organometallic compounds. The organometallic compounds are useful in semiconductor applications as chemical vapor or atomic layer deposition precursors for film depositions.

Abstract: This invention relates to organometallic compounds having the formula L1ML2 wherein M is a metal or metalloid, L1 is a substituted or unsubstituted 6 electron donor anionic ligand, and L2 is a substituted or unsubstituted 6 electron donor anionic ligand, wherein L1 and L2 are the same or different, a process for producing the organometallic compounds, and a method for producing a film or coating from the organometallic compounds. The organometallic compounds are useful in semiconductor applications as chemical vapor or atomic layer deposition precursors for film depositions.

Abstract: This invention relates to organometallic compounds having the formula L1ML2 wherein M is a metal or metalloid, L1 is a substituted or unsubstituted 6 electron donor anionic ligand, and L2 is a substituted or unsubstituted 6 electron donor anionic ligand, wherein L1 and L2 are the same or different, a process for producing the organometallic compounds, and a method for producing a film or coating from the organometallic compounds. The organometallic compounds are useful in semiconductor applications as chemical vapor or atomic layer deposition precursors for film depositions.

Abstract: This invention relates to organometallic compounds having the formula (L1)yM(L2)z wherein M is a metal or metalloid, L1 is the same or different and is (i) a substituted or unsubstituted anionic 4 electron donor ligand or (ii) a substituted or unsubstituted anionic 4 electron donor ligand with a pendant neutral 2 electron donor moiety, L2 is the same or different and is (i) a substituted or unsubstituted anionic 2 electron donor ligand or (ii) a substituted or unsubstituted neutral 2 electron donor ligand; y is an integer of 2; and z is an integer of from 0 to 2; and wherein the sum of the oxidation number of M and the electric charges of L1 and L2 is equal to 0; a process for producing the organometallic compounds, and a method for producing a film or coating from the organometallic compounds. The organometallic compounds are useful in semiconductor applications as chemical vapor or atomic layer deposition precursors for film depositions.

Abstract: A method for forming a metal carbide layer begins with providing a substrate, an organometallic precursor material, at least one doping agent such as nitrogen, and a plasma such as a hydrogen plasma. The substrate is placed within a reaction chamber; and heated. A process cycle is then performed, where the process cycle includes pulsing the organometallic precursor material into the reaction chamber, pulsing the doping agent into the reaction chamber, and pulsing the plasma into the reaction chamber, such that the organometallic precursor material, the doping agent, and the plasma react at the surface of the substrate to form a metal carbide layer. The process cycles can be repeated and varied to form a graded metal carbide layer.