Abstract: A method and system to map density and temperature of a chip, in situ, is disclosed. The method includes measuring a propagation time that a mechanical propagation wave travels along at least one predefined path in a substrate. The method further includes calculating an average substrate density and temperature along the at least one predefined path as a function of the propagation time and distance. The method further includes determining a defect or unauthorized modification in the substrate based on the average substrate density being different than a baseline substrate density.

Abstract: A method and system to map density and temperature of a chip, in situ, is disclosed. The method includes measuring a propagation time that a mechanical propagation wave travels along at least one predefined path in a substrate. The method further includes calculating an average substrate density and temperature along the at least one predefined path as a function of the propagation time and distance. The method further includes determining a defect or unauthorized modification in the substrate based on the average substrate density being different than a baseline substrate density.

Abstract: A method and system to map density and temperature of a chip, in situ, is disclosed. The method includes measuring a propagation time that a mechanical propagation wave travels along at least one predefined path in a substrate. The method further includes calculating an average substrate density and temperature along the at least one predefined path as a function of the propagation time and distance. The method further includes determining a defect or unauthorized modification in the substrate based on the average substrate density being different than a baseline substrate density.

Abstract: A method and system to map density and temperature of a chip, in situ, is disclosed. The method includes measuring a propagation time that a mechanical propagation wave travels along at least one predefined path in a substrate. The method further includes calculating an average substrate density and temperature along the at least one predefined path as a function of the propagation time and distance. The method further includes determining a defect or unauthorized modification in the substrate based on the average substrate density being different than a baseline substrate density.

Abstract: Disclosed is a fault isolation and measurement system that provides multiple near-field scanning isolation techniques on a common platform. The system incorporates the use of a specialized holder to supply electrical bias to internal circuit structures located within an area of a device or material. The system further uses a multi-probe assembly. Each probe is mounted to a support structure around a common reference point and is a component of a different measurement or fault isolation tool. The assembly moves such that each probe can obtain measurements from the same fixed location on the device or material. The relative positioning of the support structure and/or the holder can be changed in order to obtain measurements from multiple same fixed locations within the area. Additionally, the system uses a processor for providing layered images associated with each signal and for precisely aligning those images with design data in order to characterize, or isolate fault locations within the device or material.

Abstract: An integrated circuit, a method and a system for designing and a method fabricating the integrated circuit. The method including: (a) generating a photomask level design of an integrated circuit design of the integrated circuit, the photomask level design comprising a multiplicity of integrated circuit element shapes; (b) designating regions of the photomask level design between adjacent integrated circuit element shapes, the designated regions large enough to require placement of fill shapes between the adjacent integrated circuit elements based on fill shape rules, the fill shapes not required for the operation of the integrated circuit; and (c) placing one or more monitor structure shapes of a monitor structure in at least one of the designated regions, the monitor structure not required for the operation of the integrated circuit.

Abstract: Disclosed is a fault isolation and measurement system that provides multiple near-field scanning isolation techniques on a common platform. The system incorporates the use of a specialized holder to supply electrical bias to internal circuit structures located within an area of a device or material. The system further uses a multi-probe assembly. Each probe is mounted to a support structure around a common reference point and is a component of a different measurement or fault isolation tool. The assembly moves such that each probe can obtain measurements from the same fixed location on the device or material. The relative positioning of the support structure and/or the holder can be changed in order to obtain measurements from multiple same fixed locations within the area. Additionally, the system uses a processor for providing layered images associated with each signal and for precisely aligning those images with design data in order to characterize, or isolate fault locations within the device or material.

Abstract: A method and structure for an integrated circuit comprising a first transistor and an embedded carbon nanotube field effect transistor (CNT FET) proximate to the first transistor, wherein the CNT FET is dimensioned smaller than the first transistor. The CNT FET is adapted to sense signals from the first transistor, wherein the signals comprise any of temperature, voltage, current, electric field, and magnetic field signals. Moreover, the CNT FET is adapted to measure stress and strain in the integrated circuit, wherein the stress and strain comprise any of mechanical and thermal stress and strain. Additionally, the CNT FET is adapted to detect defective circuits within the integrated circuit.

Abstract: Disclosed is a fault isolation and measurement system that provides multiple near-field scanning isolation techniques on a common platform. The system incorporates the use of a specialized holder to supply electrical bias to internal circuit structures located within an area of a device or material. The system further uses a multi-probe assembly. Each probe is mounted to a support structure around a common reference point and is a component of a different measurement or fault isolation tool. The assembly moves such that each probe can obtain measurements from the same fixed location on the device or material. The relative positioning of the support structure and/or the holder can be changed in order to obtain measurements from multiple same fixed locations within the area. Additionally, the system uses a processor for providing layered images associated with each signal and for precisely aligning those images with design data in order to characterize, or isolate fault locations within the device or material.

Abstract: Disclosed is an apparatus and method for diagnostically testing circuitry within a device. The apparatus and method incorporate the use of energy (e.g., light, heat, magnetic, electric, etc.) applied directly to any location on the device that can affect the electrical activity within the circuitry being tested in order to produce an indicator of a response. A local sensor (e.g., photonic, magnetic, etc.) is positioned at another location on the device where the sensor can detect the indicator of the response within the circuitry. A correlator is configured with response location correlation software and/or circuit tracing software so that when the indicator is detected, the correlator can determine the exact location of a response causing a device failure and/or trace the connectivity of the circuitry, based upon the location of the energy source and the location of the sensor.

Abstract: An integrated circuit, a method and a system for designing and a method fabricating the integrated circuit. The method including: (a) generating a photomask level design of an integrated circuit design of the integrated circuit, the photomask level design comprising a multiplicity of integrated circuit element shapes; (b) designating regions of the photomask level design between adjacent integrated circuit element shapes, the designated regions large enough to require placement of fill shapes between the adjacent integrated circuit elements based on fill shape rules, the fill shapes not required for the operation of the integrated circuit; and (c) placing one or more monitor structure shapes of a monitor structure in at least one of the designated regions, the monitor structure not required for the operation of the integrated circuit.

Abstract: A method for implementing defect inspection of an integrated circuit includes configuring a power bus grid structure on a first metal interconnect level, the power bus grid structure including a first plurality of wire pairs. The first plurality of wire pairs is arranged in a manner such that a first wire in each of the first plurality of wire pairs is electrically coupled to conductive structures beneath the first metal interconnect level, and a second wire in each of the first plurality of wire pairs is initially electrically isolated from the conductive structures beneath the first metal interconnect level. The first wire in each of the first plurality of wire pairs is biased to a known voltage, and a charge contrast inspection is performed between the first wire and the second wire of each of the first plurality of wire pairs.

Abstract: A method and structure for an integrated circuit comprising a first transistor and an embedded carbon nanotube field effect transistor (CNT FET) proximate to the first transistor, wherein the CNT FET is dimensioned smaller than the first transistor. The CNT FET is adapted to sense signals from the first transistor, wherein the signals comprise any of temperature, voltage, current, electric field, and magnetic field signals. Moreover, the CNT FET is adapted to measure stress and strain in the integrated circuit, wherein the stress and strain comprise any of mechanical and thermal stress and strain. Additionally, the CNT FET is adapted to detect defective circuits within the integrated circuit.

Abstract: Disclosed is a shielded clock tree that has one or more clock signal buffers and clock signal splitters, with clock signal wiring connecting the clock signal buffers to the clock signal splitters. Shielding is adjacent the clock signal wiring, where ground wiring connects the shielding to ground. The shielding comprises shield wires positioned adjacent and parallel to the clock signal wiring. The invention provides switches in the ground wiring, and these switches are connected to, and controlled by, a test controller.

Abstract: An integrated circuit, a method and a system for designing and a method fabricating the integrated circuit. The method including: (a) generating a photomask level design of an integrated circuit design of the integrated circuit, the photomask level design comprising a multiplicity of integrated circuit element shapes; (b) designating regions of the photomask level design between adjacent integrated circuit element shapes, the designated regions large enough to require placement of fill shapes between the adjacent integrated circuit elements based on fill shape rules, the fill shapes not required for the operation of the integrated circuit; and (c) placing one or more monitor structure shapes of a monitor structure in at least one of the designated regions, the monitor structure not required for the operation of the integrated circuit.

Abstract: The present invention provides inspection methods and structures for facilitating the visualization and/or detection of specific chip structures. Optical or fluorescent labeling techniques are used to “stain” a specific chip structure for easier detection of the structure. Also, a temporary/sacrificial illuminating (e.g., fluorescent) film is added to the semiconductor process to facilitate the detection of a specific chip structure. Further, a specific chip structure is doped with a fluorescent material during the semiconductor process. A method of the present invention comprises: providing a first and a second material; processing the first material to form a portion of a semiconductor structure; and detecting a condition of the second material to determine whether processing of the first material is complete.

Abstract: Disclosed is an apparatus and method for diagnostically testing circuitry within a device. The apparatus and method incorporate the use of energy (e.g., light, heat, magnetic, electric, etc.) applied directly to any location on the device that can affect the electrical activity within the circuitry being tested in order to produce an indicator of a response. A local sensor (e.g., photonic, magnetic, etc.) is positioned at another location on the device where the sensor can detect the indicator of the response within the circuitry. A correlator is configured with response location correlation software and/or circuit tracing software so that when the indicator is detected, the correlator can determine the exact location of a response causing a device failure and/or trace the connectivity of the circuitry, based upon the location of the energy source and the location of the sensor.

Abstract: A method is disclosed for designing scan chains in an integrated circuit chip with specific parameter sensitivities to identify fabrication process defects causing test fails and chip yield loss. The composition of scan paths in the integrated circuit chip is biased to allow them to also function as on-product process monitors. The method adds grouping constraints that bias scan chains to have common latch cell usage where possible, and also biases cell routing to constrain scan chain routing to given restricted metal layers for interconnects. The method assembles a list of latch design parameters which are sensitive to process variation or integrity, and formulates a plan for scan chain design which determines the number and the length of scan chains. A model is formulated of scan chain design based upon current state of yield and process integrity, wherein certain latch designs having dominant sensitivities are chosen for specific ones of the scan chains on the chip.

Abstract: An apparatus and a method for testing semiconductor devices, such as individual integrated circuits in semiconductor chips, by directing a current in each circuit through a respective selected predetermined path to establish, in each circuit, a respective focused magnetic field and converting each such magnetic field into a respective voltage which, when fed to respective amplifier gated with a respective selected frequency, will modulate each such respective voltage. Each such respective voltage is then used to create a respective pulsating magnetic field that when detected by a respective remote magnetic sensor will provide a series of respective signals representative of the current in the respective circuit from which the pulsating magnetic field was derived.

Abstract: A diagnostic system and method for testing an integrated circuit during fabrication thereof. The diagnostic system has at least one integrated circuit chip that has an electrical signature associated with it; a sacrificial circuit that is adjacent to the integrated circuit chip and has a known electrical signature associated with it and intentionally mis-designed circuitry; and a comparator adapted to compare the electrical signature of the integrated circuit chip with the known electrical signature of the sacrificial circuit, wherein a match in the electrical signature of the integrated circuit chip with the known electrical signature of the sacrificial circuit indicates that the integrated circuit chip is mis-designed. The diagnostic system further includes a semiconductor wafer that has a plurality of integrated circuit chips and a kerf area separating one integrated circuit chip from another integrated circuit chip. A mis-designed integrated circuit chip has abnormally functioning circuitry.