Abstract: The present invention relates to a substrate comprising an ion-implanted layer, for example a cation, wherein the ion implanted layer has a substantially uniform distribution of the implanted ions at a significantly greater depth than previously possible, to a well-defined and sharp boundary within the substrate. The invention further comprises said substrate wherein the substrate is a silicon based substrate, such as glass. The invention also comprises the use of said material as a waveguide and the use of said material in measurement devices.

Abstract: The present invention relates to a substrate comprising an ion-implanted layer, for example a cation, wherein the ion implanted layer has a substantially uniform distribution of the implanted ions at a significantly greater depth than previously possible, to a well-defined and sharp boundary within the substrate. The invention further comprises said substrate wherein the substrate is a silicon based substrate, such as glass. The invention also comprises the use of said material as a waveguide and the use of said material in measurement devices.

Abstract: The present invention relates to a substrate comprising an ion-implanted layer, for example a cation, wherein the ion implanted layer has a substantially uniform distribution of the implanted ions at a significantly greater depth than previously possible, to a well-defined and sharp boundary within the substrate. The invention further comprises said sub-strate wherein the substrate is a silicon based substrate, such as glass. The invention also comprises the use of said material as a waveguide and the use of said material in measurement devices.

Abstract: The present invention relates to a substrate comprising an ion-implanted layer, for example a cation, wherein the ion implanted layer has a substantially uniform distribution of the implanted ions at a significantly greater depth than previously possible, to a well-defined and sharp boundary within the substrate. The invention further comprises said substrate wherein the substrate is a silicon based substrate, such as glass. The invention also comprises the use of said material as a waveguide and the use of said material in measurement devices.

Abstract: The present invention relates to a substrate comprising an ion-implanted layer, for example a cation, wherein the ion implanted layer has a uniform distribution of the implanted ions at a significantly greater depth than previously possible. The invention further comprises said substrate wherein the substrate is a silicon based substrate, such as glass. The invention also comprises the use of said material as a waveguide and the use of said material in measurement devices.

Abstract: The present invention relates to a substrate comprising an ion-implanted layer, for example a cation, wherein the ion implanted layer has a uniform distribution of the implanted ions at a significantly greater depth than previously possible. The invention further comprises said substrate wherein the substrate is a silicon based substrate, such as glass. The invention also comprises the use of said material as a waveguide and the use of said material in measurement devices.

Abstract: The present invention relates to a substrate comprising an ion-implanted layer, for example a cation, wherein the ion implanted layer has a uniform distribution of the implanted ions at a significantly greater depth than previously possible. The invention further comprises said substrate wherein the substrate is a silicon based substrate, such as glass. The invention also comprises the use of said material as a waveguide and the use of said material in measurement devices.

Abstract: A process for fabricating a device capable of random lasing comprising a substrate and a rare earth-doped glass fabricated on the substrate in the form of a waveguide, wherein the glass comprises a germanium glass, a titanium glass or a chalcogenide glass, where the process comprises ablating a target glass with incident radiation from an ultrafast laser in the presence of the substrate to deposit a quantity of the target glass on the substrate and applying rastering to ablate the target glass uniformly. The ultrafast laser emits pulses of 15 ps or less and the relative position of the laser spot on the target glass with respect to the substrate is constant during the ablation and wherein the Gaussian intensity profile of the laser beam has a spot area less than 3000 ?m2.

Abstract: The invention provides a reflective material, adapted for the efficient retro-reflection of radiation emitted by radar, the material comprising a multiplicity of reflective entities which are typically embedded in a substrate, the multiplicity of reflective entities being comprised in at least one reflective surface or electrically conducting surface, and the at least one reflective surface or electrically conducting surface comprising an electrically conductive coating, a high permittivity material, a foil, a film or a fabric formed from electrically conducting fibres or filaments. The reflective entities may comprise discrete shaped entities, most preferably di- or tri-hedral shaped entities, which are preferably embedded in a high permittivity medium. More preferably, the reflective entities are comprised in the machined surface of a reflecting substance comprising a polymeric sheet material which is machined to provide an irregular patterned surface.

Abstract: A random laser comprising a substrate and a rare earth-doped glass fabricated on the substrate in the form of a waveguide, wherein the glass comprises a germanium glass, a titanium glass, or a chalcogenide glass.