Abstract: A method for fabricating a stacked semiconductor system with encapsulated through wire interconnects includes providing a substrate having a first side, a second side and a substrate contact; forming a via in the substrate contact and the substrate to the second side; placing a wire in the via; forming a first contact on the wire proximate to the first side and a second contact on the wire proximate to the second side; and forming a polymer layer on the first side leaving the first contact exposed. The method also includes stacking two or more substrates and electrically connecting the through wire interconnects on the substrates.

Abstract: A semiconductor component includes a semiconductor substrate having a substrate contact, and a through wire interconnect (TWI) bonded to the substrate contact. The through wire interconnect (TWI) includes a via through the substrate contact and the substrate, a compressed wire in the via bonded to the substrate contact, and a contact on the wire. A stacked semiconductor component includes the semiconductor substrate, and a second semiconductor substrate stacked on the substrate and bonded to a through wire interconnect on the substrate.

Abstract: A semiconductor module system includes a module substrate and first and second semiconductor components stacked on the module substrate. The stacked semiconductor components include through wire interconnects that form an internal signal transmission system for the module system. Each through wire interconnect includes a via, a wire in the via and first and second contacts on the wire.

Abstract: A semiconductor component includes a semiconductor substrate having a substrate contact, and a through wire interconnect (TWI) bonded to the substrate contact. The through wire interconnect (TWI) includes a via through the substrate contact and the substrate, a wire in the via bonded to the substrate contact, and a contact on the wire. A stacked semiconductor component includes the semiconductor substrate, and a second semiconductor substrate stacked on the substrate and bonded to a through wire interconnect on the substrate. A method for fabricating a semiconductor component with a through wire interconnect includes the steps of providing a semiconductor substrate with a substrate contact, forming a via through the substrate contact and part way through the substrate, placing the wire in the via, bonding the wire to the substrate contact, and then thinning the substrate from a second side to expose a contact on the wire.

Abstract: Methods and apparatuses for transferring heat from stacked microfeature devices are disclosed herein. In one embodiment, a microfeature device assembly comprises a support member having terminals and a first microelectronic die having first external contacts carried by the support member. The first external contacts are operatively coupled to the terminals on the support member. The assembly also includes a second microelectronic die having integrated circuitry and second external contacts electrically coupled to the first external contacts. The first die is between the support member and the second die. The assembly can further include a heat transfer unit between the first die and the second die. The heat transfer unit includes a first heat transfer portion, a second heat transfer portion, and a gap between the first and second heat transfer portions such that the first external contacts and the second external contacts are aligned with the gap.

Abstract: A semiconductor module system includes a module substrate and first and second semiconductor components stacked on the module substrate. The stacked semiconductor components include through wire interconnects that form an internal signal transmission system for the module system. Each through wire interconnect includes a via, a wire in the via and first and second contacts on the wire.

Abstract: A method for fabricating a semiconductor component with an encapsulated through wire interconnect includes the steps of providing a substrate having a first side, a second side and a substrate contact; forming a via in the substrate contact and the substrate to the second side; placing a wire in the via; forming a first contact on the wire proximate to the first side and a second contact on the wire proximate to the second side; and forming a polymer layer on the first side leaving the first contact exposed. The polymer layer can be formed using a film assisted molding process including the steps of: forming a mold film on tip portions of the bonding members, molding the polymer layer, and then removing the mold film to expose the tip portions of the bonding members. The through wire interconnect provides a multi level interconnect having contacts on opposing sides of the semiconductor substrate.

Abstract: A solid state light (“SSL”), a solid state emitter (“SSE”), and methods of manufacturing SSLs and SSEs. In one embodiment, an SSL comprises a packaging substrate having an electrical contact and a light emitting structure having a front side and a back side. The back side of the light emitting structure is superimposed with the electrical contact of the packaging substrate. The SSL can further include a temperature control element aligned with the light emitting structure and the electrical contact of the packaging substrate.

Abstract: Methods and apparatuses for transferring heat from stacked microfeature devices are disclosed herein. In one embodiment, a microfeature device assembly comprises a support member having terminals and a first microelectronic die having first external contacts carried by the support member. The first external contacts are operatively coupled to the terminals on the support member. The assembly also includes a second microelectronic die having integrated circuitry and second external contacts electrically coupled to the first external contacts. The first die is between the support member and the second die. The assembly can further include a heat transfer unit between the first die and the second die. The heat transfer unit includes a first heat transfer portion, a second heat transfer portion, and a gap between the first and second heat transfer portions such that the first external contacts and the second external contacts are aligned with the gap.

Abstract: A method for fabricating a semiconductor component with a through wire interconnect includes the step of providing a substrate having a circuit side, a back side, and a through via. The method also includes the steps of: threading a wire through the via, forming a contact on the wire on the back side, forming a bonded contact on the wire on the circuit side, and then severing the wire from the bonded contact. The through wire interconnect includes the wire in the via, the contact on the back side and the bonded contact on the circuit side. The contact on the back side, and the bonded contact on the circuit side, permit multiple components to be stacked with electrical connections between adjacent components. A system for performing the method includes the substrate with the via, and a wire bonder having a bonding capillary configured to thread the wire through the via, and form the contact and the bonded contact.

Abstract: A stacked semiconductor component includes a semiconductor substrate having a substrate contact, a substrate opening extending to an inner surface of the substrate contact, and a conductive interconnect comprising a wire in the substrate opening having a wire bonded connection with the inner surface of the substrate contact. The stacked semiconductor component also includes a second substrate stacked on the semiconductor substrate having a contact bonded to the conductive interconnect on the semiconductor substrate. The second substrate can also include conductive interconnects in the form of wire bonded wires, and the stacked semiconductor substrate can include a third semiconductor substrate stacked on the second substrate.

Abstract: A method and apparatus providing a lens master device and use of the same to form a lens template and/or a lens structure. The method includes obtaining a plurality of individual lens masters, each of which has a shaped portion defining at least a portion of a lens structure to be formed. The lens masters are affixed onto a supporting structure to form a lens master device.

Abstract: A support structure for use with a semiconductor substrate in thinning, or backgrinding, thereof, as well as during post-thinning processing of the semiconductor substrate includes a portion that extends substantially along and around an outer periphery of the semiconductor substrate to impart the thinned semiconductor substrate with rigidity. The support structure may be configured as a ring or as a member that substantially covers an active surface of the semiconductor substrate and forms a protective structure over each semiconductor device carried by the active surface.

Abstract: A through-wafer interconnect for imager, memory and other integrated circuit applications is disclosed, thereby eliminating the need for wire bonding, making devices incorporating such interconnects stackable and enabling wafer level packaging for imager devices. Further, a smaller and more reliable die package is achieved and circuit parasitics (e.g., L and R) are reduced due to the reduced signal path lengths.

Abstract: A backside method for fabricating a semiconductor component with a conductive interconnect includes the step of providing a semiconductor substrate having a circuit side, a backside, and a substrate contact on the circuit side. The method also includes the steps of forming a substrate opening from the backside to the substrate contact, and then bonding the conductive interconnect to an inner surface of the substrate contact.

Abstract: A method for fabricating a semiconductor component with a through wire interconnect includes the step of providing a substrate having a circuit side, a back side, and a through via. The method also includes the steps of: threading a wire through the via, forming a contact on the wire on the back side, forming a bonded contact on the wire on the circuit side, and then severing the wire from the bonded contact. The through wire interconnect includes the wire in the via, the contact on the back side and the bonded contact on the circuit side. The contact on the back side, and the bonded contact on the circuit side, permit multiple components to be stacked with electrical connections between adjacent components. A system for performing the method includes the substrate with the via, and a wire bonder having a bonding capillary configured to thread the wire through the via, and form the contact and the bonded contact.

Abstract: Interconnect structures for stacked dies, including penetrating structures for through-silicon vias, and associated systems and methods are disclosed. A system in accordance with a particular embodiment includes a first semiconductor substrate having a first substrate material, and a penetrating structure carried by the first semiconductor substrate. The system further includes a second semiconductor substrate having a second substrate material with a preformed recess. The penetrating structure of the first semiconductor substrate is received in the recess of the second semiconductor substrate and is mechanically engaged with the recess and secured to the second semiconductor substrate.

Abstract: A semiconductor component includes a semiconductor substrate having at least one conductive interconnect on the backside thereof bonded to an inner surface of a substrate contact. A stacked semiconductor component includes multiple semiconductor components in a stacked array having bonded connections between conductive interconnects on adjacent components. An image sensor semiconductor component includes a semiconductor substrate having light detecting elements on the circuit side, and conductive interconnects on the backside.

Abstract: A stacked semiconductor component includes a plurality of semiconductor substrates in a stacked array and a continuous wire extending through aligned vias on the semiconductor substrates of the stacked array in electrical contact with contacts on the semiconductor substrates. A method for fabricating the semiconductor component includes the steps of stacking the semiconductor substrates in a stacked array with aligned vias; threading a wire through the aligned vias; and forming a plurality of electrical connections between the wire and the contacts on the semiconductor substrates.

Abstract: A method and apparatus providing a lens master device and use of the same to form a lens template and/or a lens structure. The method includes obtaining a plurality of individual lens masters, each of which has a shaped portion defining at least a portion of a lens structure to be formed. The lens masters are affixed onto a supporting structure to form a lens master device.