Abstract: Device comprising an ohmic via contact, and method of fabricating thereof. A preferred embodiment comprises forming a metal layer over a substrate, forming a conductive barrier layer over the metal layer, depositing an insulating layer over the conductive barrier layer, creating an opening in the insulating layer to expose the conductive barrier layer, and forming a via contact in the opening. The conductive barrier layer protects the metal layer by preventing the formation of an oxide layer, which could reduce conductivity.

Abstract: A deformable hinge for use in microelectromechanical devices comprises a protection layer that is electrically conductive. The protection layer is on top of another hinge layer; and is more resistive than the hinge layer to the etchant used in during patterning and/or release processes during fabrication of the microelectromechanical device. As a result, the hinge layer can be protected from being damaged during the fabrication process.

Abstract: Methods and apparatus for use with a micromirror element includes a micromirror a micromirror having a substantially flat outer surface disposed outwardly from a support structure that is operable to at least partially support the micromirror. The support structure includes at least one layer overlying at least two discrete planes that are both substantially parallel to the outer surface of the micromirror. In one particular embodiment, the support structure includes annular-shaped sidewalls that encapsulate a photoresist plug.

Abstract: The present invention provides a method for planarizing a metal layer, and a method for manufacturing a micro pixel array. The method for planarizing the metal layer, without limitation, may include the steps of forming a metal layer over a photoresist layer, and then planarizing the metal layer using a chemical mechanical planarization process.

Abstract: Device comprising an ohmic via contact, and method of fabricating thereof. A preferred embodiment comprises forming a metal layer over a substrate, forming a conductive barrier layer over the metal layer, depositing an insulating layer over the conductive barrier layer, creating an opening in the insulating layer to expose the conductive barrier layer, and forming a via contact in the opening. The conductive barrier layer protects the metal layer by preventing the formation of an oxide layer, which could reduce conductivity.

Abstract: Device comprising an ohmic via contact, and method of fabricating thereof. A preferred embodiment comprises forming a metal layer over a substrate, forming a conductive barrier layer over the metal layer, depositing an insulating layer over the conductive barrier layer, creating an opening in the insulating layer to expose the conductive barrier layer, and forming a via contact in the opening. The conductive barrier layer protects the metal layer by preventing the formation of an oxide layer, which could reduce conductivity.

Abstract: A deformable hinge for use in microelectromechanical devices comprises a protection layer that is electrically conductive. The protection layer is on top of another hinge layer; and is more resistive than the hinge layer to the etchant used in during patterning and/or release processes during fabrication of the microelectromechanical device. As a result, the hinge layer can be protected from being damaged during the fabrication process.

Abstract: Methods and apparatus for use with a micromirror element includes a micromirror a micromirror having a substantially flat outer surface disposed outwardly from a support structure that is operable to at least partially support the micromirror. The support structure includes at least one layer overlying at least two discrete planes that are both substantially parallel to the outer surface of the micromirror. In one particular embodiment, the support structure includes annular-shaped sidewalls that encapsulate a photoresist plug.

Abstract: Methods and apparatus for use with a micromirror element includes a micromirror a micromirror having a substantially flat outer surface disposed outwardly from a support structure that is operable to at least partially support the micromirror. The support structure includes at least one layer overlying at least two discrete planes that are both substantially parallel to the outer surface of the micromirror. In one particular embodiment, the support structure includes annular-shaped sidewalls that encapsulate a photoresist plug.

Abstract: The invention provides a method for manufacturing a microelectronic device and a microelectronic device. The method for manufacturing the microelectronic device, without limitation, may include forming a first mirror layer over and within one or more openings in a sacrificial spacer layer, and forming a dielectric layer over an upper surface of the first mirror layer and within the one or more openings. The method may further include subjecting the dielectric layer to an etch, the etch removing the dielectric layer from the upper surface and leaving dielectric portions along sidewalls of the one or more openings, and forming a second mirror layer over the first mirror layer and within the one or more openings, the dielectric portions separating the first mirror layer and the second mirror layer along the sidewalls.

Abstract: A semiconductor device and method of forming thereof. An embodiment comprises forming a spacer layer on a substrate, forming a via having walls and a bottom in the spacer layer, depositing a conformal first conductive layer on the spacer layer and on the walls and the bottom of the via, forming a nucleating layer over the conformal first conductive layer, forming a conformal second conductive layer over the nucleating layer, and removing the spacer layer. The nucleating layer helps in the formation of the conformal second conductive layer, thereby creating a more uniform coating of the conformal first conductive layer with better step coverage.

Abstract: The invention provides a method for manufacturing a microelectronic device and a microelectronic device. The method for manufacturing the microelectronic device, without limitation, may include forming a first mirror layer over and within one or more openings in a sacrificial spacer layer, and forming a dielectric layer over an upper surface of the first mirror layer and within the one or more openings. The method may further include subjecting the dielectric layer to an etch, the etch removing the dielectric layer from the upper surface and leaving dielectric portions along sidewalls of the one or more openings, and forming a second mirror layer over the first mirror layer and within the one or more openings, the dielectric portions separating the first mirror layer and the second mirror layer along the sidewalls.

Abstract: Device comprising an ohmic via contact, and method of fabricating thereof. A preferred embodiment comprises forming a metal layer over a substrate, forming a conductive barrier layer over the metal layer, depositing an insulating layer over the conductive barrier layer, creating an opening in the insulating layer to expose the conductive barrier layer, and forming a via contact in the opening. The conductive barrier layer protects the metal layer by preventing the formation of an oxide layer, which could reduce conductivity.

Abstract: Methods and apparatus for use with a micromirror element includes a micromirror a micromirror having a substantially flat outer surface disposed outwardly from a support structure that is operable to at least partially support the micromirror. The support structure includes at least one layer overlying at least two discrete planes that are both substantially parallel to the outer surface of the micromirror. In one particular embodiment, the support structure includes annular-shaped sidewalls that encapsulate a photoresist plug.

Abstract: The present invention provides a method for planarizing a metal layer, and a method for manufacturing a micro pixel array. The method for planarizing the metal layer, without limitation, may include the steps of forming a metal layer over a photoresist layer, and then planarizing the metal layer using a chemical mechanical planarization process.

Abstract: In one embodiment, a method for forming a metal layer in a via of a semiconductor device includes providing a substrate, the substrate having a plurality of vias formed therein, forming a first portion of a metal layer outwardly from the substrate using a long throw sputtering process, and forming a second portion of the metal layer outwardly form the first portion of the metal layer using a short throw sputtering process. The first and second portions of the metal layer equal a total thickness of the metal layer.