Patents by Inventor David S. Kuo

David S. Kuo has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Apparatuses and methods utilizing etch stop layers
    Patent number: 9683295
    Abstract: Provided herein is an apparatus, including a substrate; an etch stop layer overlying the substrate, wherein the etch stop layer is substantially resistant to etching conditions; and a patterned layer overlying the etch stop layer, wherein the patterned layer is substantially labile to the etching conditions, and wherein the patterned layer comprises a number of features including substantially consistent feature profiles among regions of high feature density and regions of low feature density.
    Type: Grant
    Filed: May 24, 2016
    Date of Patent: June 20, 2017
    Assignee: Seagate Technology LLC
    Inventors: Michael R. Feldbaum, Koichi Wago, Gennady Gauzner, Kim Y. Lee, David S. Kuo
  • APPARATUS FOR METHODS FOR ALIGNED SERVO-RELATED FEATURES
    Publication number: 20170125049
    Abstract: Provided herein is a method, including creating a first pattern in a data region of a substrate, and creating a second pattern in a servo region of a substrate. A circumferential line pattern is created overlapping the first pattern to create rectangle-shaped protrusions in the data region of the substrate. A chevron pattern is created overlapping the second pattern to create chevron-derived protrusions in the servo region of the substrate.
    Type: Application
    Filed: January 10, 2017
    Publication date: May 4, 2017
    Inventors: Shuaigang Xiao, David S. Kuo, XiaoMin Yang, Kim Y. Lee, Yautzong Hsu, Koichi Wago
  • Apparatus and methods for aligned servo-related features
    Patent number: 9620161
    Abstract: Provided herein is an apparatus, including a first region of a substrate corresponding to a data region in a patterned recording medium; a first set of protrusions etched out of the first region of the substrate, wherein the protrusions of the first set of protrusions are rectangle shaped; a second region of the substrate corresponding to a servo region in a patterned recording medium; and a second set of protrusions etched out of the second region of the substrate, wherein the second set of protrusions includes radial lines etched into the substrate across chevrons etched out of the substrate.
    Type: Grant
    Filed: April 16, 2015
    Date of Patent: April 11, 2017
    Assignee: Seagate Technology LLC
    Inventors: Shuaigang Xiao, David S. Kuo, XiaoMin Yang, Kim Y. Lee, Yautzong Hsu, Koichi Wago
  • Apparatuses and methods utilizing etch stop layers
    Patent number: 9605348
    Abstract: Provided herein is an apparatus, including a substrate; an etch stop layer overlying the substrate, wherein the etch stop layer is substantially resistant to etching conditions; and a patterned layer overlying the etch stop layer, wherein the patterned layer is substantially labile to the etching conditions, and wherein the patterned layer comprises a number of features including substantially consistent feature profiles among regions of high feature density and regions of low feature density.
    Type: Grant
    Filed: May 20, 2016
    Date of Patent: March 28, 2017
    Assignee: Seagate Technology LLC
    Inventors: Michael R. Feldbaum, Koichi Wago, Gennady Gauzner, Kim Y. Lee, David S. Kuo
  • SERVO INTEGRATED BPM TEMPLATE
    Publication number: 20170084300
    Abstract: Provided herein is a method including forming a data zone guiding pattern and forming a servo zone guiding pattern. A servo pattern and a data pattern are simultaneously formed. Directed self-assembly of block copolymers is guided by the data zone guiding pattern and the servo zone guiding pattern.
    Type: Application
    Filed: August 10, 2016
    Publication date: March 23, 2017
    Inventors: ShuaiGang Xiao, XiaoMin Yang, David S. Kuo, Kim Yang Lee, Yautzong Hsu
  • APPARATUS AND METHODS FOR ALIGNED SERVO-RELATED FEATURES
    Publication number: 20170025140
    Abstract: Provided herein is an apparatus, including a first region of a substrate corresponding to a data region in a patterned recording medium; a first set of protrusions etched out of the first region of the substrate, wherein the protrusions of the first set of protrusions are rectangle shaped; a second region of the substrate corresponding to a servo region in a patterned recording medium; and a second set of protrusions etched out of the second region of the substrate, wherein the second set of protrusions includes radial lines etched into the substrate across chevrons etched out of the substrate.
    Type: Application
    Filed: April 16, 2015
    Publication date: January 26, 2017
    Applicant: Seagate Technology LLC
    Inventors: Shuaigang Xiao, David S. Kuo, XiaoMin Yang, Kim Y. Lee, Yautzong Hsu, David Koichi
  • Hybrid-guided block copolymer assembly
    Patent number: 9460747
    Abstract: A method for nano-patterning includes imprinting features in a resist with an imprint mold to form one or more topographic surface patterns on the imprinted resist. A block copolymer (“BCP”) material is deposited on the imprinted resist, wherein a molecular dimension L0 of the BCP material correlates by an integer multiple to a spacing dimension of the one or more topographic surface patterns on the imprinted resist. The deposited BCP is annealed and at least a portion of the annealed BCP is removed, forming a template having discrete domains.
    Type: Grant
    Filed: August 19, 2015
    Date of Patent: October 4, 2016
    Assignee: Seagate Technology LLC
    Inventors: Yuan Xu, Kim Y. Lee, David S. Kuo, Koichi Wago, Wei Hu
  • APPARATUSES AND METHODS UTILIZING ETCH STOP LAYERS
    Publication number: 20160266493
    Abstract: Provided herein is an apparatus, including a substrate; an etch stop layer overlying the substrate, wherein the etch stop layer is substantially resistant to etching conditions; and a patterned layer overlying the etch stop layer, wherein the patterned layer is substantially labile to the etching conditions, and wherein the patterned layer comprises a number of features including substantially consistent feature profiles among regions of high feature density and regions of low feature density.
    Type: Application
    Filed: May 20, 2016
    Publication date: September 15, 2016
    Inventors: Michael R. Feldbaum, Koichi Wago, Gennady Gauzner, Kim Y. Lee, David S. Kuo
  • APPARATUSES AND METHODS UTILIZING ETCH STOP LAYERS
    Publication number: 20160265119
    Abstract: Provided herein is an apparatus, including a substrate; an etch stop layer overlying the substrate, wherein the etch stop layer is substantially resistant to etching conditions; and a patterned layer overlying the etch stop layer, wherein the patterned layer is substantially labile to the etching conditions, and wherein the patterned layer comprises a number of features including substantially consistent feature profiles among regions of high feature density and regions of low feature density.
    Type: Application
    Filed: May 24, 2016
    Publication date: September 15, 2016
    Inventors: Michael R. Feldbaum, Koichi Wago, Gennady Gauzner, Kim Y. Lee, David S. Kuo
  • HARD-MASK DEFINED BIT PATTERN SUBSTRATE
    Publication number: 20160181102
    Abstract: Provided is an apparatus that includes a substrate; a first hard-mask pattern that includes a number of first features disposed over a top surface of the substrate; and a second hard-mask pattern disposed over the first hard-mask layer. The second hard-mask pattern includes a number of second features overlapping one or more of the first features.
    Type: Application
    Filed: February 26, 2016
    Publication date: June 23, 2016
    Inventors: XiaoMin Yang, Shuaigang Xiao, Yautzong Hsu, Zhaoning Yu, Kim Y. Lee, David S. Kuo
  • Apparatuses and methods utilizing etch stop layers
    Patent number: 9370907
    Abstract: Provided herein is an apparatus, including a substrate; an etch stop layer overlying the substrate, wherein the etch stop layer is substantially resistant to etching conditions; and a patterned layer overlying the etch stop layer, wherein the patterned layer is substantially labile to the etching conditions, and wherein the patterned layer comprises a number of features including substantially consistent feature profiles among regions of high feature density and regions of low feature density.
    Type: Grant
    Filed: March 20, 2014
    Date of Patent: June 21, 2016
    Assignee: Seagate Technology LLC
    Inventors: Michael R. Feldbaum, Koichi Wago, Gennady Gauzner, Kim Y. Lee, David S. Kuo
  • METHOD OF PATTERNING A STACK
    Publication number: 20160168723
    Abstract: The embodiments disclose a method of fabricating a stack, including replacing a metal layer of a stack imprint structure with an oxide layer, patterning the oxide layer stack using chemical etch processes to transfer the pattern image and cleaning etch residue from the stack imprint structure to substantially prevent contamination of the metal layers.
    Type: Application
    Filed: February 24, 2016
    Publication date: June 16, 2016
    Inventors: Michael R. Feldbaum, Justin Jia-Jen Hwu, David S. Kuo, Gennady Gauzner, Kim Yang Lee, Li-Ping Wang
  • Apparatus including temperature-dependent exchange spring mechanism
    Patent number: 9349402
    Abstract: Provided herein is an apparatus comprising a substrate; a continuous layer over the substrate comprising a first heat sink layer; and a plurality of features over the continuous layer comprising a second heat sink layer, a first magnetic layer over the second heat sink layer, and a second magnetic layer, wherein the first and second magnetic layers are configured to provide a temperature-dependent, exchange spring mechanism.
    Type: Grant
    Filed: February 10, 2015
    Date of Patent: May 24, 2016
    Assignee: Seagate Technology LLC
    Inventors: Xi Chen, Ganping Ju, Yingguo Peng, Timothy J. Klemmer, Yukiko Kubota, Jan-Ulrich Thiele, David S. Kuo, Kai-Chieh Chang, Kangkang Wang, Li Gao, Yinfeng Ding
  • Method of stack patterning using a ion etching
    Patent number: 9330885
    Abstract: The embodiments disclose a method of stack patterning, including loading a stack into a stationary stack stage, rotating one or more ion beam grid assemblies substantially concentrically aligned with the stationary stack stage to etch the stack and controlling the operation of the one or more ion beam grid assemblies to achieve substantial axial uniformity of the etched stack.
    Type: Grant
    Filed: June 30, 2011
    Date of Patent: May 3, 2016
    Assignee: Seagate Technology LLC
    Inventors: Michael R. Feldbaum, Justin Jia-Jen Hwu, David S. Kuo, Gennady Gauzner, Li-Ping Wang
  • Apparatuses and methods including magnetic layer oxidation
    Patent number: 9299380
    Abstract: Provided herein is a method including oxidizing tops of features of a patterned magnetic layer to form oxidized tops of the features; removing an excess of an applied first protective material down to at least the oxidized tops of the features to form a planarized layer; and applying a second protective material over the planarized layer.
    Type: Grant
    Filed: October 24, 2013
    Date of Patent: March 29, 2016
    Assignee: Seagate Technology LLC
    Inventors: Michael R. Feldbaum, Koichi Wago, Bin Lu, David S. Kuo
  • Hard-mask defined bit pattern substrate
    Patent number: 9299609
    Abstract: Provided is an apparatus that includes a substrate; a first hard-mask pattern that includes a number of first features disposed over a top surface of the substrate; and a second hard-mask pattern disposed over the first hard-mask layer. The second hard-mask pattern includes a number of second features overlapping one or more of the first features.
    Type: Grant
    Filed: July 23, 2014
    Date of Patent: March 29, 2016
    Assignee: Seagate Technology LLC
    Inventors: XiaoMin Yang, Shuaigang Xiao, Yautzong Hsu, Zhaoning Yu, Kim Y. Lee, David S. Kuo
  • Method of patterning a stack
    Patent number: 9284649
    Abstract: The embodiments disclose a method of fabricating a stack, including replacing a metal layer of a stack imprint structure with an oxide layer, patterning the oxide layer stack using chemical etch processes to transfer the pattern image and cleaning etch residue from the stack imprint structure to substantially prevent contamination of the metal layers.
    Type: Grant
    Filed: June 30, 2011
    Date of Patent: March 15, 2016
    Assignee: Seagate Technology LLC
    Inventors: Michael R. Feldbaum, Justin Jia-Jen Hwu, David S. Kuo, Gennady Gauzner, Kim Yang Lee, Li-Ping Wang
  • CALIBRATION STANDARD WITH PRE-DETERMINED FEATURES
    Publication number: 20160069929
    Abstract: Provided herein in an apparatus, including a substrate; a functional layer, wherein the functional layer has a composition characteristic of a workpiece of an analytical apparatus; and pre-determined features configured to calibrate the analytical apparatus. Also provided herein is an apparatus, including a functional layer overlying a substrate; and pre-determined features for calibration of an analytical apparatus configured to measure the surface of a workpiece, wherein the functional layer has a composition similar to the workpiece.
    Type: Application
    Filed: April 17, 2013
    Publication date: March 10, 2016
    Inventors: Gennady Gauzner, Zhaoning Yu, Nobuo Kurataka, David S. Kuo, Kim Y. Lee, Yautzong Hsu, Hong Ying Wang
  • HARD-MASK DEFINED BIT PATTERN SUBSTRATE
    Publication number: 20160027681
    Abstract: Provided is an apparatus that includes a substrate; a first hard-mask pattern that includes a number of first features disposed over a top surface of the substrate; and a second hard-mask pattern disposed over the first hard-mask layer. The second hard-mask pattern includes a number of second features overlapping one or more of the first features.
    Type: Application
    Filed: July 23, 2014
    Publication date: January 28, 2016
    Inventors: XiaoMin Yang, Shuaigang Xiao, Yautzong Hsu, Zhaoning Yu, Kim Y. Lee, David S. Kuo
  • Template-based magnetic grain-nucleation sites on seed layer
    Patent number: 9245566
    Abstract: A perpendicular magnetic media includes a substrate, a patterned template, a seed layer and a magnetic layer. The patterned template is formed on the substrate and includes a plurality of growth sites that are evenly spaced apart from each other. The seed layer is formed over the patterned template and the exposed areas of the substrate. Magnetic material is sputter deposited onto the seed layer with one grain of the magnetic material nucleated over each of the growth sites. The grain size distribution of the magnetic material is reduced by controlling the locations of the growth sites which optimizes the performance of the perpendicular magnetic media.
    Type: Grant
    Filed: January 13, 2014
    Date of Patent: January 26, 2016
    Assignee: Seagate Technology LLC
    Inventors: Shuaigang Xiao, Thomas Young Chang, Yingguo Peng, David S. Kuo, Kaizhong Gao, Thomas P. Nolan, Ganping Ju