Abstract: This disclosure describes a structure for transistor devices formed from compound semiconductor materials; and particularly for heterojunction bipolar transistors (HBTs); and more particularly for the collector structure of a double HBT (DHBT). The invention enables high output power at high frequency operation, or high frequency operation at high output power.

Abstract: The invention, called hypercontacting, achieves a very high level of activated doping at an exposed surface region of a compound semiconductor. This enables production of low resistance ohmic contacts by creating a heavily doped region near the contact. Such region lowers the contact's tunneling barrier by decreasing the extent of the depletion region at the contact, thereby reducing resistance.

Abstract: A system for manipulating data is provided. Such a system comprises a host system, a discrete portable data acquisition device for collecting the data, at least one of a wireless wide area network (WWAN) data radio, a wireless local area network (WLAN) data radio, and a wireless personal area network (WPAN) data radio operably engaged with the portable data acquisition device and configured to at least one of transmit the data to the host system, communicate with a peripheral device, and receive data, and a memory operably engaged with the portable data acquisition device for storing the data, the memory comprising a FLASH memory module, a DRAM memory module, and an NVDRAM memory module. Associated systems, devices, and methods are also provided.