Patents by Inventor David T. Price
David T. Price has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20240145504Abstract: A semiconductor device may include a plurality of single-photon avalanche diode (SPAD) pixels. The semiconductor device may be a backside device having a substrate at the backside, dielectric layers on the substrate, metal layers interleaved with the dielectric layers, and a through silicon via (TSV) formed in the backside through the substrate and the dielectric layers. TSV seal rings may be formed around the TSV to protect the semiconductor device from moisture and/or water ingress. The TSV seal rings may be coupled to a high-voltage cathode bond pad and be coupled to offset portions of one of the metal layers to reduce leakage and/or parasitic effects due to the voltage difference between the cathode and the substrate. The TSV seal rings may also be merged with die seal rings at the edge of the substrate.Type: ApplicationFiled: November 1, 2022Publication date: May 2, 2024Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLCInventors: Jeffrey Peter GAMBINO, Rick Carlton JEROME, David T. PRICE, Michael Gerard KEYES, Anne DEIGNAN
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Patent number: 11961859Abstract: Implementations of semiconductor packages may include: a digital signal processor having a first side and a second side and an image sensor array, having a first side and a second side. The first side of the image sensor array may be coupled to the second side of the digital signal processor through a plurality of hybrid bond interconnect (HBI) bond pads and an edge seal. One or more openings may extend from the second side of the image sensor array into the second side of the digital signal processor to an etch stop layer in the second side of the digital signal processor. The one or more openings may form a second edge seal between the plurality of HBI bond pads and the edge of the digital signal processor.Type: GrantFiled: April 24, 2023Date of Patent: April 16, 2024Assignee: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLCInventors: Jeffrey Peter Gambino, Kyle Thomas, David T. Price, Rusty Winzenread, Bruce Greenwood
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Publication number: 20230352518Abstract: An integrated circuit die includes a silicon chromium (SiCr) thin film resistor disposed on a first oxide layer. The SiCr thin film resistor has a resistor body and a resistor head. A second oxide layer overlays the SiCr thin film resistor. The second oxide layer has an opening exposing a surface of the resistor head. A metal pad is disposed in the opening in the second oxide layer and is contact with the surface of the resistor head exposed by the opening. Further, an interlevel dielectric layer is disposed on the second oxide layer overlaying the SiCr thin film resistor. A metal-filled via extends from a top surface of interlevel dielectric layer through the interlevel dielectric layer and contacts the metal pad disposed in the opening in the second oxide layer.Type: ApplicationFiled: July 3, 2023Publication date: November 2, 2023Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLCInventors: Rick Carlton JEROME, Gordon M. GRIVNA, Kevin Alexander STEWART, David T. PRICE, Jeffrey Peter GAMBINO
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Publication number: 20230352515Abstract: Implementations of image sensor devices may include a through-silicon-via (TSV) formed in a backside of an image sensor device and extending through a material of a die to a metal landing pad. The metal landing pad may be within a contact layer. The devices may include a TSV edge seal ring surrounding a portion of the TSV in the contact layer and extending from a first surface of the contact layer into the contact layer to a depth coextensive with a depth of the TSV.Type: ApplicationFiled: July 5, 2023Publication date: November 2, 2023Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLCInventors: Jeffrey Peter GAMBINO, Rick JEROME, David T. PRICE
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Patent number: 11756977Abstract: Implementations of image sensor devices may include a through-silicon-via (TSV) formed in a backside of an image sensor device and extending through a material of a die to a metal landing pad. The metal landing pad may be within a contact layer. The devices may include a TSV edge seal ring surrounding a portion of the TSV in the contact layer and extending from a first surface of the contact layer into the contact layer to a depth coextensive with a depth of the TSV.Type: GrantFiled: June 21, 2018Date of Patent: September 12, 2023Assignee: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLCInventors: Jeffrey Peter Gambino, Rick Jerome, David T. Price
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Publication number: 20230261015Abstract: Implementations of semiconductor packages may include: a digital signal processor having a first side and a second side and an image sensor array, having a first side and a second side. The first side of the image sensor array may be coupled to the second side of the digital signal processor through a plurality of hybrid bond interconnect (HBI) bond pads and an edge seal. One or more openings may extend from the second side of the image sensor array into the second side of the digital signal processor to an etch stop layer in the second side of the digital signal processor. The one or more openings may form a second edge seal between the plurality of HBI bond pads and the edge of the digital signal processor.Type: ApplicationFiled: April 24, 2023Publication date: August 17, 2023Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLCInventors: Jeffrey Peter GAMBINO, Kyle THOMAS, David T. PRICE, Rusty WINZENREAD, Bruce GREENWOOD
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Patent number: 11670655Abstract: Implementations of semiconductor packages may include: a digital signal processor having a first side and a second side and an image sensor array, having a first side and a second side. The first side of the image sensor array may be coupled to the second side of the digital signal processor through a plurality of hybrid bond interconnect (HBI) bond pads and an edge seal. One or more openings may extend from the second side of the image sensor array into the second side of the digital signal processor to an etch stop layer in the second side of the digital signal processor. The one or more openings may form a second edge seal between the plurality of HBI bond pads and the edge of the digital signal processor.Type: GrantFiled: August 9, 2019Date of Patent: June 6, 2023Assignee: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLCInventors: Jeffrey Peter Gambino, Kyle Thomas, David T. Price, Rusty Winzenread, Bruce Greenwood
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Patent number: 11506687Abstract: In one embodiment, a method of forming a semiconductor device may include forming a sense resistor to receive a high voltage signal and form a sense signal that is representative of the high voltage signal. An embodiment of the sense resistor may optionally be formed overlying a polysilicon resistor. The method may also have an embodiment that may include forming a plurality of capacitors in parallel to portions of the sense resistor wherein the plurality of capacitors are connected together in series.Type: GrantFiled: September 3, 2020Date of Patent: November 22, 2022Assignee: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLCInventors: Kevin Alexander Stewart, Martin Kejhar, Radim Mlcousek, Arash Elhami Khorasani, David T. Price, Mark Griswold
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Publication number: 20220367534Abstract: An imaging device may include single-photon avalanche diodes (SPADs). To mitigate crosstalk, isolation structures may be formed around each SPAD. The isolation structures may include front side deep trench isolation structures that extend partially or fully through a semiconductor substrate for the SPADs. The isolation structures may include a metal filler such as tungsten that absorbs photons. The isolation structures may include a p-type doped semiconductor liner to mitigate dark current. The isolation structures may include a buffer layer such as silicon dioxide that is interposed between the metal filler and the p-type doped semiconductor liner. The isolation structures may have a tapered portion or may be formed in two steps such that the isolation structures have different portions with different properties. An additional filler such as polysilicon or borophosphosilicate glass may be included in some of the isolation structures in addition to the metal filler.Type: ApplicationFiled: May 13, 2021Publication date: November 17, 2022Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLCInventors: Jeffrey Peter GAMBINO, David T. PRICE, Marc Allen SULFRIDGE, Richard MAURITZSON, Michael Gerard KEYES, Ryan RETTMANN, Kevin MCSTAY
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Publication number: 20220271118Abstract: An integrated circuit die includes a silicon chromium (SiCr) thin film resistor disposed on a first oxide layer. The SiCr thin film resistor has a resistor body and a resistor head. A second oxide layer overlays the SiCr thin film resistor. The second oxide layer has an opening exposing a surface of the resistor head. A metal pad is disposed in the opening in the second oxide layer and is contact with the surface of the resistor head exposed by the opening. Further, an interlevel dielectric layer is disposed on the second oxide layer overlaying the SiCr thin film resistor. A metal-filled via extends from a top surface of interlevel dielectric layer through the interlevel dielectric layer and contacts the metal pad disposed in the opening in the second oxide layer.Type: ApplicationFiled: February 25, 2021Publication date: August 25, 2022Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLCInventors: Rick Carlton JEROME, Gordon M. GRIVNA, Kevin Alexander STEWART, David T. PRICE, Jeffrey Peter GAMBINO
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Publication number: 20220181462Abstract: In a general aspect, a transistor can include a fin having a proximal end and a distal end. The fin can include a dielectric portion longitudinally extending between the proximal end and the distal end, and a semiconductor layer disposed on the dielectric portion. The semiconductor layer can longitudinally extend between the proximal end and the distal end. The transistor can further include a source region disposed at the proximal end of the fin, and a drain region disposed at the distal end of the fin. The transistor can also include a gate dielectric layer disposed on a channel region of the semiconductor layer. The channel region can be disposed between the gate dielectric layer and the dielectric portion. The channel region can be longitudinally disposed between the source region and the drain region. The transistor can further include a conductive gate electrode disposed on the gate dielectric layer.Type: ApplicationFiled: December 3, 2020Publication date: June 9, 2022Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLCInventors: Jeffrey Peter GAMBINO, Kevin Alexander STEWART, Peter MOENS, David T. PRICE, Derryl ALLMAN
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Publication number: 20220093667Abstract: Implementations of a semiconductor device may include a photodiode included in a second epitaxial layer of a semiconductor substrate; light shield coupled over the photodiode; and a first epitaxial layer located in one or more openings in the light shield. The first epitaxial layer and the second epitaxial layer may form a single crystal.Type: ApplicationFiled: September 23, 2020Publication date: March 24, 2022Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLCInventors: Manuel H. INNOCENT, Tomas GEURTS, David T. PRICE
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Publication number: 20220003800Abstract: In one embodiment, a method of forming a semiconductor device may include forming a sense resistor to receive a high voltage signal and form a sense signal that is representative of the high voltage signal. An embodiment of the sense resistor may optionally be formed overlying a polysilicon resistor. The method may also have an embodiment that may include forming a plurality of capacitors in parallel to portions of the sense resistor wherein the plurality of capacitors are connected together in series.Type: ApplicationFiled: September 3, 2020Publication date: January 6, 2022Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLCInventors: Kevin Alexander STEWART, Martin KEJHAR, Radim MLCOUSEK, Arash ELHAMI KHORASANI, David T. PRICE, Mark GRISWOLD
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Patent number: 11075148Abstract: A stacked assembly of semiconductor devices includes a mounting pad covering a first portion of a low-side semiconductor device, and a contact layer covering a second portion of the low-side semiconductor device. A first mounting clip electrically connected to the contact layer has a supporting portion joining the first mounting clip to a first lead frame portion. A second mounting clip attached to the mounting pad has a supporting portion joining the second mounting clip to a second lead frame portion. A high-side semiconductor device has a first terminal electrically connected to the first mounting clip and thereby to the contact layer, and a second terminal electrically connected to the second mounting clip.Type: GrantFiled: November 6, 2019Date of Patent: July 27, 2021Assignee: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLCInventors: Jeffrey Peter Gambino, David T. Price, Jeffery A. Neuls, Dean E. Probst, Santosh Menon, Peter A. Burke, Bigildis Dosdos
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Publication number: 20210111106Abstract: A stacked assembly of semiconductor devices includes a mounting pad covering a first portion of a low-side semiconductor device, and a contact layer covering a second portion of the low-side semiconductor device. A first mounting clip electrically connected to the contact layer has a supporting portion joining the first mounting clip to a first lead frame portion. A second mounting clip attached to the mounting pad has a supporting portion joining the second mounting clip to a second lead frame portion. A high-side semiconductor device has a first terminal electrically connected to the first mounting clip and thereby to the contact layer, and a second terminal electrically connected to the second mounting clip.Type: ApplicationFiled: November 6, 2019Publication date: April 15, 2021Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLCInventors: Jeffrey Peter GAMBINO, David T. Price, Jeffery A. NEULS, Dean E. PROBST, Santosh MENON, Peter A. BURKE, Bigildis DOSDOS
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Publication number: 20200328271Abstract: Implementations of capacitors may include: a first electrode having a first side and a second side. The capacitor may also include a silicon nitride (SiN) layer including on the second side of the first electrode. An opening may be included in the silicon nitride layer. The capacitors may include a dielectric layer within the opening of the SiN layer. The dielectric layer may include a recess. The capacitor may also include a second electrode having a first side and a second side. The first side of the second electrode may be included within the recess of the dielectric layer.Type: ApplicationFiled: July 9, 2019Publication date: October 15, 2020Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLCInventors: Jeffrey Peter GAMBINO, David T. PRICE, Akihiro HASEGAWA, Derryl ALLMAN, Sallie J. HOSE, Kenneth Andrew BATES, Gregory Frank PIATT
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Publication number: 20200273896Abstract: Implementations of pixels may include a photodiode layer including a photodetector and two or more silicon based circular transistors and an interconnect layer coupled to the photodiode layer. The interconnect layer may include an amorphous oxide semiconductor (AOS) transistor operatively coupled with the two or more silicon based circular transistors.Type: ApplicationFiled: July 9, 2019Publication date: August 27, 2020Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLCInventors: Manuel H. INNOCENT, Kevin Alexander STEWART, David T. PRICE
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Publication number: 20190393257Abstract: Implementations of image sensor devices may include a through-silicon-via (TSV) formed in a backside of an image sensor device and extending through a material of a die to a metal landing pad. The metal landing pad may be within a contact layer. The devices may include a TSV edge seal ring surrounding a portion of the TSV in the contact layer and extending from a first surface of the contact layer into the contact layer to a depth coextensive with a depth of the TSV.Type: ApplicationFiled: June 21, 2018Publication date: December 26, 2019Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLCInventors: Jeffrey Peter Gambino, Rick Jerome, David T. Price
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Publication number: 20190363124Abstract: Implementations of semiconductor packages may include: a digital signal processor having a first side and a second side and an image sensor array, having a first side and a second side. The first side of the image sensor array may be coupled to the second side of the digital signal processor through a plurality of hybrid bond interconnect (HBI) bond pads and an edge seal. One or more openings may extend from the second side of the image sensor array into the second side of the digital signal processor to an etch stop layer in the second side of the digital signal processor. The one or more openings may form a second edge seal between the plurality of HBI bond pads and the edge of the digital signal processor.Type: ApplicationFiled: August 9, 2019Publication date: November 28, 2019Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLCInventors: Jeffrey Peter GAMBINO, Kyle THOMAS, David T. PRICE, Rusty WINZENREAD, Bruce GREENWOOD
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Patent number: 10431614Abstract: Implementations of semiconductor packages may include: a digital signal processor having a first side and a second side and an image sensor array, having a first side and a second side. The first side of the image sensor array may be coupled to the second side of the digital signal processor through a plurality of hybrid bond interconnect (HBI) bond pads and an edge seal. One or more openings may extend from the second side of the image sensor array into the second side of the digital signal processor to an etch stop layer in the second side of the digital signal processor. The one or more openings may form a second edge seal between the plurality of HBI bond pads and the edge of the digital signal processor.Type: GrantFiled: February 1, 2017Date of Patent: October 1, 2019Assignee: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLCInventors: Jeffrey Peter Gambino, Kyle Thomas, David T. Price, Rusty Winzenread, Bruce Greenwood