Abstract: An insulation system and method are disclosed for insulating formed coils of electrical machines, such as motors and generators. The system includes strand/turn insulation that may include one or more layers of different materials, depending upon the dielectric requirements. A ground wall insulation is applied over the group of turns. The coil may be sized in a slot cell section. Additional insulation layers are provided, including a slot corona suppression insulation that extends just beyond stator slots, a voltage grading layer, and an armor layer. The resulting system is highly adaptable to different machine designs and ratings, and affords superior resistance to degradation.

Abstract: A method for generating semiconductor device model parameters includes receiving semiconductor device performance data of statistical instances of semiconductor devices, for a plurality of coordinates in a process space with dimensions of process-dependent device parameters Model parameters are extracted to produce individual model instances, each corresponding to the respective statistical instances for the coordinates in the process space. Statistics of the extracted model parameters are modeled by processing the individual model instances to determine, for each coordinate in the process space, moments describing non-normal marginal distributions of the extracted model parameters and correlations between the extracted model parameters. Semiconductor device model parameters are generated for use in simulating a circuit using the determined moments and the determined correlations, for a selected coordinate in the process space.

Abstract: A method for generating semiconductor device model parameters includes receiving semiconductor device performance data of statistical instances of semiconductor devices, for a plurality of areal trapped charge densities Model parameters are extracted to produce individual model instances, each corresponding to the respective statistical instances for the areal trapped charge densities. Statistics of the extracted model parameters are modeled by processing the individual model instances to determine, for each areal trapped charge density, moments describing non-normal marginal distributions of the extracted model parameters and correlations between the extracted model parameters. Semiconductor device model parameters are generated for use in simulating a circuit using the determined moments and the determined correlations, for a selected areal trapped charge density.

Abstract: In one embodiment, a method for generating semiconductor device model parameters includes the steps: (a) receiving semiconductor device performance data of statistical instances of semiconductor devices, for a plurality of coordinates in a process space with dimensions of process-dependent device parameters; (b) extracting model parameters to produce a plurality of individual model instances each corresponding to the respective statistical instances for the coordinates in process space; (c) modeling statistics of the extracted model parameters by processing the individual model instances to determine, for each coordinate in process space: moments describing non-normal marginal distributions of the extracted model parameters and correlations between the extracted model parameters; and (d) generating semiconductor device model SPICE parameters using the determined moments and the determined correlations, for a selected coordinate in process space.

Abstract: In one embodiment, a method for generating semiconductor device model parameters includes the steps: (a) receiving semiconductor device performance data of statistical instances of semiconductor devices, for a plurality of areal trapped charge densities; (b) extracting model parameters to produce a plurality of individual model instances each corresponding to the respective statistical instances for the areal trapped charge densities; (c) modeling statistics of the extracted model parameters by processing the individual model instances to determine, for each areal trapped charge density: moments describing non-normal marginal distributions of the extracted model parameters and correlations between the extracted model parameters; and (d) generating semiconductor device model SPICE parameters using the determined moments and the determined correlations, for a selected areal trapped charge density.