Abstract: Implementations described herein provide a method for processing a substrate on a substrate support assembly which enables both lateral and azimuthal tuning of the heat transfer between an electrostatic chuck and a substrate. The method includes processing a first substrate using a first temperature profile on a substrate support assembly having primary heaters and spatially tunable heaters. A deviation profile is determined from a result of processing the first substrate. The spatially tunable heaters are controlled in response to the deviation profile to enable discrete lateral and azimuthal tuning of local hot or cold spots on the substrate support assembly in forming a second temperature profile. A second substrate is then processed using the second temperature profile.

Abstract: Implementations described herein provide a method for processing a substrate on a substrate support assembly which enables both lateral and azimuthal tuning of the heat transfer between an electrostatic chuck and a substrate. The method includes processing a first substrate using a first temperature profile on a substrate support assembly having primary heaters and spatially tunable heaters. A deviation profile is determined from a result of processing the first substrate. The spatially tunable heaters are controlled in response to the deviation profile to enable discrete lateral and azimuthal tuning of local hot or cold spots on the substrate support assembly in forming a second temperature profile. A second substrate is then processed using the second temperature profile.

Abstract: Implementations described herein provide a method for processing a substrate on a substrate support assembly which enables both lateral and azimuthal tuning of the heat transfer between an electrostatic chuck and a substrate. The method includes processing a first substrate using a first temperature profile on the ESC having primary heaters and spatially tunable heaters. A deviation profile is determined from a result of processing the first substrate from a target result profile. The first temperature profile is adjusted to a second temperature profile on the ESC based on the deviation profile. Adjusting to the second temperature profile includes incrementing the power to one or more spatially tunable heaters in one or more discrete locations corresponding to the deviations profile. A second substrate is then processed on the ESC using the second temperature profile.

Abstract: Methods and apparatus for a multi-chamber processing system having shared vacuum systems are disclosed herein. In some embodiments, a multi-chamber processing system for processing substrates includes a first process chamber; a second process chamber; a first vacuum system coupled to the first and second process chambers through first and second valves and to a first shared vacuum pump; and a second vacuum system coupled to the first and second process chambers through third and fourth valves and to a second shared vacuum pump, wherein the second vacuum system is fluidly independent from the first vacuum system.

Abstract: Implementations described herein provide a method for processing a substrate on a substrate support assembly which enables both lateral and azimuthal tuning of the heat transfer between an electrostatic chuck and a substrate. The method includes processing a first substrate using a first temperature profile on the ESC having primary heaters and spatially tunable heaters. A deviation profile is determined from a result of processing the first substrate from a target result profile. The first temperature profile is adjusted to a second temperature profile on the ESC based on the deviation profile. Adjusting to the second temperature profile includes incrementing the power to one or more spatially tunable heaters in one or more discrete locations corresponding to the deviations profile. A second substrate is then processed on the ESC using the second temperature profile.