Patents by Inventor David V. Nins

David V. Nins has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 5273910
    Abstract: The present invention provides a large area, high pixel density solid state radiation detector with a real-time and a non-destructive read-out. The solid state detector comprises a plurality of field effect transistors deposited onto a substrate to form an array. A planarization layer is deposited over the array of transistors. An energy sensitive layer is deposited onto the planarization layer. Means is provided for electrically connecting the energy sensitive layer with each transistor of the array. A top electrode layer is deposited onto the energy sensitive layer. The solid state detector also comprises circuitry means for providing electronic read-out from each FET of the array.
    Type: Grant
    Filed: May 5, 1992
    Date of Patent: December 28, 1993
    Assignee: Minnesota Mining and Manufacturing Company
    Inventors: Nang T. Tran, Neil W. Loeding, David V. Nins, deceased
  • Patent number: 5235195
    Abstract: The present invention provides a large area, high pixel density solid state radiation detector with a real-time and a non-destructive read-out. The solid state detector comprises a plurality of field effect transistors deposited onto a substrate to form an array. A planarization layer is deposited over the array of transistors. An energy sensitive layer is deposited onto the planarization layer. Means is provided for electrically connecting the energy sensitive layer with each transistor of the array. A top electrode layer is deposited onto the energy sensitive layer. The solid state detector also comprises circuitry means for providing electronic read-out from each FET of the array.
    Type: Grant
    Filed: October 19, 1992
    Date of Patent: August 10, 1993
    Assignee: Minnesota Mining and Manufacturing Company
    Inventors: Nang T. Tran, Neil W. Loeding, David V. Nins, deceased
  • Patent number: 5182624
    Abstract: The present invention provides a large area, high pixel density solid state radiation detector with a real-time and a non-destructive read-out. The solid state detector comprises a plurality of field effect transistors deposited onto a substrate to form an array. A planarization layer is deposited over the array of transistors. An energy sensitive layer is deposited onto the planarization layer. Means is provided for electrically connecting the energy sensitive layer with each transistor of the array. A top electrode layer is deposited onto the energy sensitive layer. The solid state detector also comprises circuitry means for providing electronic read-out from each FET of the array.
    Type: Grant
    Filed: August 8, 1990
    Date of Patent: January 26, 1993
    Assignee: Minnesota Mining and Manufacturing Company
    Inventors: Nang T. Tran, Neil W. Loeding, David V. Nins