Abstract: A support bracket assembly for supporting a pair of bushing well interrupter devices provided within a transformer enclosure that encloses a transformer. The support bracket assembly includes a mounting bracket assembly rigidly secured to a parking stand on the enclosure and including a plurality of mounting bosses. The support bracket assembly further includes support brackets, a first adjustable link secured to one of the mounting bosses on the mounting assembly and a mounting boss on a support bracket, a second adjustable link secured to another one of the mounting bosses on the mounting assembly and a mounting bosses on a support bracket, and a third adjustable link secured to mounting bosses on two support bracket, where the first, second and third adjustable links form a triangular configuration.

Abstract: A system and method for determining an open or closed position of a magnetically actuated vacuum interrupter. The method includes applying a voltage signal of a known voltage to the actuator over a predetermined period and determining a change in current over time during the period when the voltage signal is applied to the actuator using an output of a Rogowski coil. The method also includes calculating the inductance using the voltage and the change in current over time at a predetermined time during the period and using the calculated inductance to determine whether the actuator and thus the vacuum interrupter are in the open or closed position.

Abstract: A method of controlling wafer bow in an integrated circuit fabrication process may include characterizing the wafer bow in response to performing one or more first fabrication processes to an active side of an integrated circuit wafer. Determining one or more second fabrication processes, to be applied to a back side of the integrated circuit wafer, to bring the wafer bow to below a predetermined threshold based on the one or more first fabrication processes the method may additionally include performing the one or more second fabrication processes on the back side of the integrated circuit wafer.

Abstract: An electroplating apparatus for electroplating metal on a substrate includes a plating chamber configured to contain an electrolyte, a substrate holder configured to hold and rotate the substrate during electroplating, an anode, and an azimuthally asymmetric auxiliary electrode configured to be biased both anodically and cathodically during electroplating. The azimuthally asymmetric auxiliary electrode (which may be, for example, C-shaped), can be used for controlling azimuthal uniformity of metal electrodeposition by donating and diverting ionic current at a selected azimuthal position.

Abstract: A method for characterizing and locating abnormal tissue in an area of interest in a body is provided. The method may include receiving first and second modality examination data including a plurality of first and second modality examination data segments of the area of interest and determining, by evaluating each first and second modality examination data segment, a set of modality detection candidates based on the first and second modality examination data and a first and second modality feature likelihood model.

Abstract: A fusion machine which can be top-loaded on very large polyolefin pipes and pipelines has jaws which consist of an upper half jaw and lower left and right complemental jaws which pivot on the half jaw. Left and right actuators connected between the complemental jaws and the half jaw operate in one direction to cause the complemental jaws to rotate to an opened condition in which the upper half jaw can be lowered onto and lifted from the pipes to be fused and in the other direction to cause the complemental jaws to rotate to a closed condition in which the pipes to be fused are gripped so substantially around their circumferences as to resist their deformation from round during manipulation by the machine. The top-loading machine minimizes the need for heavy equipment to load and unload pipe to and from the fusion machine.

Abstract: An electroplating apparatus for electroplating metal on a substrate includes a plating chamber configured to contain an electrolyte, a substrate holder configured to hold and rotate the substrate during electroplating, an anode, and an azimuthally asymmetric auxiliary electrode configured to be biased both anodically and cathodically during electroplating. The azimuthally asymmetric auxiliary electrode (which may be, for example, C-shaped), can be used for controlling azimuthal uniformity of metal electrodeposition by donating and diverting ionic current at a selected azimuthal position.

Abstract: Methods are provided for conducting a deposition on a semiconductor substrate by selectively depositing a material on the substrate. The substrate has a plurality of substrate materials, each with a different nucleation delay corresponding to the material deposited thereon. Specifically, the nucleation delay associated with a first substrate material on which deposition is intended is less than the nucleation delay associated with a second substrate material on which deposition is not intended according to a nucleation delay differential, which degrades as deposition proceeds. A portion of the deposited material is etched to reestablish the nucleation delay differential between the first and the second substrate materials. The material is further selectively deposited on the substrate.

Abstract: An apparatus for continuous simultaneous electroplating of two metals having substantially different standard electrodeposition potentials (e.g., for deposition of Sn—Ag alloys) comprises an anode chamber for containing an anolyte comprising ions of a first, less noble metal, (e.g., tin), but not of a second, more noble, metal (e.g., silver) and an active anode; a cathode chamber for containing catholyte including ions of a first metal (e.g., tin), ions of a second, more noble, metal (e.g., silver), and the substrate; a separation structure positioned between the anode chamber and the cathode chamber, where the separation structure substantially prevents transfer of more noble metal from catholyte to the anolyte; and fluidic features and an associated controller coupled to the apparatus and configured to perform continuous electroplating, while maintaining substantially constant concentrations of plating bath components for extended periods of use.

Abstract: Methods of electroplating metal on a substrate while controlling azimuthal uniformity, include, in one aspect, providing the substrate to the electroplating apparatus configured for rotating the substrate during electroplating, and electroplating the metal on the substrate while rotating the substrate relative to a shield such that a selected portion of the substrate at a selected azimuthal position dwells in a shielded area for a different amount of time than a second portion of the substrate having the same average arc length and the same average radial position and residing at a different angular (azimuthal) position. The shield is positioned in close proximity of the substrate (e.g., within a distance that is equal to 0.1 of the substrate's radius). The shield in some embodiments may be an ionically resistive ionically permeable element having an azimuthally asymmetric distribution of channels.

Abstract: Disclosed are pre-wetting apparatus designs and methods. These apparatus designs and methods are used to pre-wet a wafer prior to plating a metal on the surface of the wafer. Disclosed compositions of the pre-wetting fluid prevent corrosion of a seed layer on the wafer and also improve the filling rates of features on the wafer.

Abstract: Methods and apparatus for electroplating material onto a substrate are provided. In many cases the material is metal and the substrate is a semiconductor wafer, though the embodiments are no so limited. Typically, the embodiments herein utilize a porous ionically resistive plate positioned near the substrate, the plate having a plurality of interconnecting 3D channels and creating a cross flow manifold defined on the bottom by the plate, on the top by the substrate, and on the sides by a cross flow confinement ring. During plating, fluid enters the cross flow manifold both upward through channels in the plate, and laterally through a cross flow side inlet positioned on one side of the cross flow confinement ring. The flow paths combine in the cross flow manifold and exit at the cross flow exit, which is positioned opposite the cross flow inlet. These combined flow paths result in improved plating uniformity.

Abstract: Methods are provided for conducting a deposition on a semiconductor substrate by selectively depositing a material on the substrate. The substrate has a plurality of substrate materials, each with a different nucleation delay corresponding to the material deposited thereon. Specifically, the nucleation delay associated with a first substrate material on which deposition is intended is less than the nucleation delay associated with a second substrate material on which deposition is not intended according to a nucleation delay differential, which degrades as deposition proceeds. A portion of the deposited material is etched to reestablish the nucleation delay differential between the first and the second substrate materials. The material is further selectively deposited on the substrate.

Abstract: Methods are provided for conducting a deposition on a semiconductor substrate by selectively depositing a material on the substrate. The substrate has a plurality of substrate materials, each with a different nucleation delay corresponding to the material deposited thereon. Specifically, the nucleation delay associated with a first substrate material on which deposition is intended is less than the nucleation delay associated with a second substrate material on which deposition is not intended according to a nucleation delay differential, which degrades as deposition proceeds. A portion of the deposited material is etched to reestablish the nucleation delay differential between the first and the second substrate materials. The material is further selectively deposited on the substrate.

Abstract: The embodiments herein relate to methods and apparatus for determining whether a particular test bath is able to successfully fill a feature on a substrate. In various cases, the substrate is a semiconductor substrate and the feature is a through-silicon-via. Generally, two experiments are used: a first experiment simulates the conditions present in a field region of the substrate during the fill process, and the second experiment simulates the conditions present in a feature on the substrate during the fill process. The output from these experiments may be used with various techniques to predict whether the particular bath will result in an adequately filled feature.

Abstract: A fusion machine which can be top-loaded on very large polyolefin pipes and pipelines has jaws which consist of an upper half jaw and lower left and right complemental jaws which pivot on the half jaw. Left and right actuators connected between the complemental jaws and the half jaw operate in one direction to cause the complemental jaws to rotate to an opened condition in which the upper half jaw can be lowered onto and lifted from the pipes to be fused and in the other direction to cause the complemental jaws to rotate to a closed condition in which the pipes to be fused are gripped so substantially around their circumferences as to resist their deformation from round during manipulation by the machine. The top-loading machine minimizes the need for heavy equipment to load and unload pipe to and from the fusion machine.

Abstract: A fusion machine which can be top-loaded on very large polyolefin pipes and pipelines has jaws which consist of an upper half jaw and lower left and right complemental jaws which pivot on the half jaw. Left and right actuators connected between the complemental jaws and the half jaw operate in one direction to cause the complemental jaws to rotate to an opened condition in which the upper half jaw can be lowered onto and lifted from the pipes to be fused and in the other direction to cause the complemental jaws to rotate to a closed condition in which the pipes to be fused are gripped so substantially around their circumferences as to resist their deformation from round during manipulation by the machine. The top-loading machine minimizes the need for heavy equipment to load and unload pipe to and from the fusion machine.

Abstract: An apparatus for continuous simultaneous electroplating of two metals having substantially different standard electrodeposition potentials (e.g., for deposition of Sn—Ag alloys) comprises an anode chamber for containing an anolyte comprising ions of a first, less noble metal, (e.g., tin), but not of a second, more noble, metal (e.g., silver) and an active anode; a cathode chamber for containing catholyte including ions of a first metal (e.g., tin), ions of a second, more noble, metal (e.g., silver), and the substrate; a separation structure positioned between the anode chamber and the cathode chamber, where the separation structure substantially prevents transfer of more noble metal from catholyte to the anolyte; and fluidic features and an associated controller coupled to the apparatus and configured to perform continuous electroplating, while maintaining substantially constant concentrations of plating bath components for extended periods of use.

Abstract: A method for characterizing and locating abnormal tissue in an area of interest in a body is provided. The method may include receiving first and second modality examination data including a plurality of first and second modality examination data segments of the area of interest and determining, by evaluating each first and second modality examination data segment, a set of modality detection candidates based on the first and second modality examination data and a first and second modality feature likelihood model.

Abstract: The embodiments disclosed herein relate to methods and apparatus for promoting bubble-free circulation of processing fluids in a recirculation system. Certain disclosed techniques involve passive, mechanical valve designs that promote variable resistance to flow in a drain. Other techniques involve automated flow control schemes that utilize feedback from flow meters, level sensors, etc. to achieve a balanced and bubble-free flow. The disclosed embodiments greatly reduce the incorporation of gas into a processing fluid, in particular as the processing fluid returns from a processing cell to a reservoir.