Abstract: A system for controlling convective flow in a light-sustained plasma includes an illumination source configured to generate illumination, a plasma cell including a bulb for containing a volume of gas, a collector element arranged to focus illumination from the illumination source into the volume of gas in order to generate a plasma within the volume of gas contained within the bulb. Further, the plasma cell is disposed within a concave region of the collector element, where the collector element includes an opening for propagating a portion of a plume of the plasma to a region external to the concave region of the collect element.

Abstract: Methods and systems for detecting defects on a wafer using defect-specific and multi-channel information are provided. One method includes acquiring information for a target on a wafer. The target includes a pattern of interest (POI) formed on the wafer and a known defect of interest (DOI) occurring proximate to or in the POI. The method also includes detecting the known DOI in target candidates by identifying potential DOI locations based on images of the target candidates acquired by a first channel of an inspection system and applying one or more detection parameters to images of the potential DOI locations acquired by a second channel of the inspection system. Therefore, the image(s) used for locating potential DOI locations and the image(s) used for detecting defects can be different.

Abstract: A wafer having improved inspection sensitivity to foreign matter on a top-most surface of the wafer, as detected with a surface scanning optical inspection system that uses an inspection wavelength. The wafer includes a substantially homogenous first layer at the top-most surface of the wafer, the first layer having a first thickness. The first layer is at least partially transparent to the inspection wavelength. A substantially homogenous second layer immediately underlies the first layer, the second layer having a second thickness. The second layer is at least partially transparent to the inspection wavelength. A substrate immediately underlies the second layer. The first thickness and the second thickness are set in a combination that produces a local minimum of an electric field at the top-most surface and a local maximum of an electric field within one hundred nanometers above the top-most surface.

Abstract: A system for inspecting specimens such as semiconductor wafers is provided. The system provides scanning of dual-sided specimens using a damping arrangement which filters unwanted acoustic and seismic vibration, including an optics arrangement which scans a first portion of the specimen and a translation or rotation arrangement for translating or rotating the specimen to a position where the optics arrangement can scan the remaining portion(s) of the specimen. The system further includes means for stitching the scans together, thereby providing both damping of the specimen and the need for smaller and less expensive optical elements.

Abstract: A dark field surface inspection tool and system are disclosed herein. The tool includes an illumination source capable of scanning a light beam onto an inspection surface. Light scattered by each inspection point is captured as image data by a photo detector array arranged at a fourier plane. The images captured are adaptively filtered to remove a portion of the bright pixels from the images to generate filtered images. The filtered images are then analyzed to detect defects in the inspection surface. Methods of the invention include using die-to-die comparison to identify bright portions of scattering patterns and generate unique image filters associated with those patterns. The associated images are then filtered to generate filtered images which are then used to detect defects. Also, data models of light scattering behavior can be used to generate filters.

Abstract: A system for inspecting specimens such as semiconductor wafers is provided. The system provides scanning of dual-sided specimens using a damping arrangement which filters unwanted acoustic and seismic vibration, including an optics arrangement which scans a first portion of the specimen and a translation or rotation arrangement for translating or rotating the specimen to a position where the optics arrangement can scan the remaining portion(s) of the specimen. The system further includes means for stitching the scans together, thereby providing both damping of the specimen and the need for smaller and less expensive optical elements.

Abstract: A system for inspecting specimens such as semiconductor wafers is provided. The system provides scanning of dual-sided specimens using a damping arrangement which filters unwanted acoustic and seismic vibration, including an optics arrangement which scans a first portion of the specimen and a translation or rotation arrangement for translating or rotating the specimen to a position where the optics arrangement can scan the remaining portion(s) of the specimen. The system further includes means for stitching the scans together, thereby providing both damping of the specimen and the need for smaller and less expensive optical elements.

Abstract: An inspection tool includes an illumination element for directing light beams onto a workpiece at differing wavelengths or at differing angles of incidence or combinations thereof. Such beams producing reflected light and scattered light optical signals. A scanning element and optical detector elements are provided. The optical detector elements receive reflected light signals and scattered light signals. Circuitry for receiving the reflected light signals and scattered light signals are used to determine thickness values for partially transmissive layers formed on the workpiece and correct for the effects of the thickness of the partially transmissive layer so that said signals can be used to identify and characterize defects of the workpiece. Moreover, the invention includes descriptions of methods for accomplishing such inspections.

Abstract: An inspection tool embodiment includes an illumination source for directing a light beam onto a workpiece to generate scattered light that includes the ordinary scattering pattern of the workpiece as well as light scattered from defects of the workpiece. The embodiment includes a programmable light selection array that receives light scattered from the workpiece and selectively directs the light scattered from defects onto a photosensor which detects the defect signal. Processing circuitry receives the defect signal and conducts surface analysis of the workpiece that can include the characterizing of defects of the workpiece. The programmable light selection arrays can include, but are not limited to, reflector arrays and filter arrays. The invention also includes associated surface inspection methods.

Abstract: A dark field surface inspection tool of the invention includes an illumination source for directing a light beam onto a work piece. The tool includes a scanning element for enabling selected inspection points on the work piece to be scanned by the light beam. During scanning, the light scattered by each inspection point generates light scattering patterns associated with the surface characteristics of the scanned inspection point. The tool includes a photo detector array having photosensitive elements arranged to receive light from the light scattering pattern, thereby capturing an image of the light scattering pattern for each inspection point. Comparison circuitry is included for comparing light scattering patterns with a reference image to enable the identification of defects at the inspection point.

Abstract: A darkfield surface inspection tool of the invention includes an illumination source for illuminating a workpiece and generating a light scattering pattern. The light scattering pattern being configured such that the positions of the light beams of the scattering pattern are uniquely related to the scattering angles of the light beams as they are scattered from the workpiece. The tool also includes a photodetector array positioned at a detector surface to detect the light scattering pattern as it reaches the detector surface. The photodetector array produces an electrical signal that is received by signal processing electronics of the tool and can be used to characterize defects on the workpiece. The invention also includes darkfield surface inspection methods.

Abstract: A system for inspecting specimens such as semiconductor wafers is provided. The system provides scanning of dual-sided specimens using a damping arrangement which filters unwanted acoustic and seismic vibration, including an optics arrangement which scans a first portion of the specimen and a translation or rotation arrangement for translating or rotating the specimen to a position where the optics arrangement can scan the remaining portion(s) of the specimen. The system further includes means for stitching the scans together, thereby providing both damping of the specimen and the need for smaller and less expensive optical elements.

Abstract: An inspection tool embodiment includes an illumination source for directing a light beam onto a workpiece to generate scattered light that includes the ordinary scattering pattern of the workpiece as well as light scattered from defects of the workpiece. The embodiment includes a programmable light selection array that receives light scattered from the workpiece and selectively directs the light scattered from defects onto a photosensor which detects the defect signal. Processing circuitry receives the defect signal and conducts surface analysis of the workpiece that can include the characterizing of defects of the workpiece. The programmable light selection arrays can include, but are not limited to, reflector arrays and filter arrays. The invention also includes associated surface inspection methods.

Abstract: A surface inspection method of the invention includes scanning an inspection surface taking surface measurements. Determinations of various noise levels in the surface are made based on variations in the surface measurements. A dynamic threshold is then determined. The dynamic threshold adapts to the noise levels in the inspection surface to provide a varying threshold that can provide areas of high and low defect sensitivity on the same inspection surface. Defects are then identified by comparing surface measurements with the dynamic threshold. Additionally, the invention includes a surface inspection method that uses signal-to-noise ratios to identify defects. Such a method scans an inspection surface to obtain surface measurements. Noise levels associated with the inspection surface are then determined. Signal-to-noise ratios are determined for the surface measurements. The signal-to-noise ratios are compared with a signal-to-noise ratio threshold value.

Abstract: A system for inspecting specimens such as semiconductor wafers is provided. The system provides scanning of dual-sided specimens using a damping arrangement which filters unwanted acoustic and seismic vibration, including an optics arrangement which scans a first portion of the specimen and a translation or rotation arrangement for translating or rotating the specimen to a position where the optics arrangement can scan the remaining portion(s) of the specimen. The system further includes means for stitching the scans together, thereby providing both damping of the specimen and the need for smaller and less expensive optical elements.

Abstract: A surface inspection method of the invention includes scanning an inspection surface taking surface measurements. Determinations of various noise levels in the surface are made based on variations in the surface measurements. A dynamic threshold is then determined. The dynamic threshold adapts to the noise levels in the inspection surface to provide a varying threshold that can provide areas of high and low defect sensitivity on the same inspection surface. Defects are then identified by comparing surface measurements with the dynamic threshold. Additionally, the invention includes a surface inspection method that uses signal-to-noise ratios to identify defects. Such a method scans an inspection surface to obtain surface measurements. Noise levels associated with the inspection surface are then determined. Signal-to-noise ratios are determined for the surface measurements. The signal-to-noise ratios are compared with a signal-to-noise ratio threshold value.

Abstract: A system for inspecting specimens such as semiconductor wafers is provided. The system provides scanning of dual-sided specimens using a damping arrangement which filters unwanted acoustic and seismic vibration, including an optics arrangement which scans a first portion of the specimen and a translation or rotation arrangement for translating or rotating the specimen to a position where the optics arrangement can scan the remaining portion(s) of the specimen. The system further includes means for stitching the scans together, thereby providing both damping of the specimen and the need for smaller and less expensive optical elements.

Abstract: A system for inspecting specimens such as semiconductor wafers is provided. The system provides scanning of dual-sided specimens using a damping arrangement which filters unwanted acoustic and seismic vibration, including an optics arrangement which scans a first portion of the specimen and a translation or rotation arrangement for translating or rotating the specimen to a position where the optics arrangement can scan the remaining portion(s) of the specimen. The system further includes means for stitching the scans together, thereby providing both damping of the specimen and the need for smaller and less expensive optical elements.

Abstract: A system for inspecting specimens such as semiconductor wafers is provided. The system provides scanning of dual-sided specimens using a damping arrangement which filters unwanted acoustic and seismic vibration, including an optics arrangement which scans a first portion of the specimen and a translation or rotation arrangement for translating or rotating the specimen to a position where the optics arrangement can scan the remaining portion(s) of the specimen. The system further includes means for stitching the scans together, thereby providing both damping of the specimen and the need for smaller and less expensive optical elements.

Abstract: This invention describes a method by which the precision of the reported molecular weights and radii of chromatographically separated molecules may be estimated. By suitably analyzing both the baseline and peak regions of a chromatogram, one may determine standard deviations of the signals from the various chromatographic detectors used in the analysis. This procedure yields standard deviations of the calculated values of molecular weight and root mean square radius of the separated molecules, as well as standard deviations of the calculated moments of the distribution of molecules. These standard deviations provide an estimate of the precision of the measurements.