Patents by Inventor David Wilt
David Wilt has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20230091494Abstract: A solar cell structure is disclosed that includes a first metal layer, formed over predefined portions of a sun-exposed major surface of a semiconductor structure, that form electrical gridlines of the solar cell; a network of carbon nanotubes formed over the first metal layer; and a second metal layer formed onto the network of carbon nanotubes, wherein the second metal layer infiltrates the network of carbon nanotubes to connect with the first metal layer to form a first metal matrix composite comprising a metal matrix and a carbon nanotube reinforcement, wherein the second metal layer is an electrically conductive layer in which the carbon nanotube reinforcement is embedded in and bonded to the metal matrix, and the first metal matrix composite provides enhanced mechanical support as well as enhanced or equal electrical conductivity for the electrical contacts against applied mechanical stressors to the electrical contacts.Type: ApplicationFiled: June 27, 2022Publication date: March 23, 2023Applicant: UNM RAINFOREST INNOVATIONSInventors: Sang M. Han, Omar Abudayyeh, David Wilt, Nathan Gapp
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Patent number: 11374133Abstract: A method for forming electrical contacts for a solar cell and a solar cell formed using the method is provided. The method includes forming a first metal layer over predefined portions of a surface of the solar cell; depositing a carbon nanotube layer over the first metal layer; and forming a second metal layer over the carbon nanotube layer, wherein the first metal layer, the carbon nanotube layer, and the second metal layer form a first metal matrix composite layer that provides electrical conductivity and mechanical support for the metal contacts.Type: GrantFiled: June 17, 2016Date of Patent: June 28, 2022Assignee: UNM RAINFOREST INNOVATIONSInventors: Sang M. Han, Omar Abudayyeh, David Wilt, Nathan Gapp
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Publication number: 20180175218Abstract: A method for forming electrical contacts for a solar cell and a solar cell formed using the method is provided. The method includes forming a first metal layer over predefined portions of a surface of the solar cell; depositing a carbon nanotube layer over the first metal layer; and forming a second metal layer over the carbon nanotube layer, wherein the first metal layer, the carbon nanotube layer, and the second metal layer form a first metal matrix composite layer that provides electrical conductivity and mechanical support for the metal contacts.Type: ApplicationFiled: June 17, 2016Publication date: June 21, 2018Inventors: Sang M. Han, Omar Abudayyeh, David Wilt, Nathan Gapp
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Patent number: 7936019Abstract: A power source and methods thereof includes a structure comprising one or more p type layers, one or more n type layers, and one or more intrinsic layers and at least one source of radiation is disposed on at least a portion of the structure. Each of the p type layers is separated from each of the n type layers by one of the intrinsic layers.Type: GrantFiled: July 13, 2005Date of Patent: May 3, 2011Assignees: Rochester Institute of Technology, Glenn Research CenterInventors: Ryne P. Raffaelle, David Wilt
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Patent number: 7867639Abstract: An alpha voltaic battery includes at least one layer of a semiconductor material comprising at least one p/n junction, at least one absorption and conversion layer on the at least one layer of semiconductor layer, and at least one alpha particle emitter. The absorption and conversion layer prevents at least a portion of alpha particles from the alpha particle emitter from damaging the p/n junction in the layer of semiconductor material. The absorption and conversion layer also converts at least a portion of energy from the alpha particles into electron-hole pairs for collection by the one p/n junction in the layer of semiconductor material.Type: GrantFiled: March 29, 2005Date of Patent: January 11, 2011Assignees: Rochester Institute of Technology, The United States of America as represented by the Administrator of National Aeronautics and Space AdministrationInventors: Ryne P. Raffaelle, Phillip Jenkins, David Wilt, David Scheiman, Donald Chubb, Stephanie Castro
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Patent number: 7867640Abstract: An alpha voltaic battery includes at least one layer of a semiconductor material comprising at least one p/n junction, at least one absorption and conversion layer on the at least one layer of semiconductor layer, and at least one alpha particle emitter. The absorption and conversion layer prevents at least a portion of alpha particles from the alpha particle emitter from damaging the p/n junction in the layer of semiconductor material. The absorption and conversion layer also converts at least a portion of energy from the alpha particles into electron-hole pairs for collection by the one p/n junction in the layer of semiconductor material.Type: GrantFiled: August 22, 2008Date of Patent: January 11, 2011Assignees: Rochester Institute of Technology, The United States of America as represented by the Administrator of the National Aeronautics and Space AdministrationInventors: Ryne P. Raffaelle, Phillip Jenkins, David Wilt, David Scheiman, Donald Chubb, Stephanie Castro
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Patent number: 7718283Abstract: An alpha voltaic battery includes at least one layer of a semiconductor material comprising at least one p/n junction, at least one absorption and conversion layer on the at least one layer of semiconductor layer, and at least one alpha particle emitter. The absorption and conversion layer prevents at least a portion of alpha particles from the alpha particle emitter from damaging the p/n junction in the layer of semiconductor material. The absorption and conversion layer also converts at least a portion of energy from the alpha particles into electron-hole pairs for collection by the one p/n junction in the layer of semiconductor material.Type: GrantFiled: August 22, 2008Date of Patent: May 18, 2010Assignees: Rochester Institute of Technology, Glenn Research Center, Ohio Aerospace InstituteInventors: Ryne P. Raffaelle, Phillip Jenkins, David Wilt, David Scheiman, Donald Chubb, Stephanie Castro
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Publication number: 20080318357Abstract: An alpha voltaic battery includes at least one layer of a semiconductor material comprising at least one p/n junction, at least one absorption and conversion layer on the at least one layer of semiconductor layer, and at least one alpha particle emitter. The absorption and conversion layer prevents at least a portion of alpha particles from the alpha particle emitter from damaging the p/n junction in the layer of semiconductor material. The absorption and conversion layer also converts at least a portion of energy from the alpha particles into electron-hole pairs for collection by the one p/n junction in the layer of semiconductor material.Type: ApplicationFiled: August 22, 2008Publication date: December 25, 2008Applicants: ROCHESTER INSTITUTE OF TECHNOLOGY, GLENN RESEARCH CENTER, OHIO AEROSPACE INSTITUTEInventors: Ryne P. Raffaelle, Phillip Jenkins, David Wilt, David Scheiman, Donald Chubb, Stephanie Castro
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Publication number: 20080311465Abstract: An alpha voltaic battery includes at least one layer of a semiconductor material comprising at least one p/n junction, at least one absorption and conversion layer on the at least one layer of semiconductor layer, and at least one alpha particle emitter. The absorption and conversion layer prevents at least a portion of alpha particles from the alpha particle emitter from damaging the p/n junction in the layer of semiconductor material. The absorption and conversion layer also converts at least a portion of energy from the alpha particles into electron-hole pairs for collection by the one p/n junction in the layer of semiconductor material.Type: ApplicationFiled: August 22, 2008Publication date: December 18, 2008Applicants: ROCHESTER INSTITUTE OF TECHNOLOGY, GLENN RESEARCH CENTER, OHIO AEROSPACE INSTITUTEInventors: Ryne P. Raffaelle, Phillip Jenkins, David Wilt, David Scheiman, Donald Chubb, Stephanie Castro
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Publication number: 20080011349Abstract: A photovoltaic device includes one or more structures, an array of at least one of quantum dots and quantum dashes, at least one groove, and at least one conductor. Each of the structures comprises an intrinsic layer on one of an n type layer and a p type layer and the other one of the n type layer and the p type layer on the intrinsic layer. The array of at least one of quantum dots and quantum dashes is located in the intrinsic layer in at least one of the structures. The groove extends into at least one of the structures and the conductor is located along at least a portion of the groove.Type: ApplicationFiled: May 3, 2007Publication date: January 17, 2008Applicants: ROCHESTER INSTITUTE OF TECHNOLOGY, GLENN RESEARCH CENTERInventors: Ryne Raffaele, David Wilt
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Publication number: 20060017108Abstract: A power source and methods thereof includes a structure comprising one or more p type layers, one or more n type layers, and one or more intrinsic layers and at least one source of radiation is disposed on at least a portion of the structure. Each of the p type layers is separated from each of the n type layers by one of the intrinsic layers.Type: ApplicationFiled: July 13, 2005Publication date: January 26, 2006Applicants: ROCHESTER INSTITUTE OF TECHNOLOGY, GLENN RESEARCH CENTERInventors: Ryne Raffaelle, David Wilt
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Publication number: 20050231064Abstract: An alpha voltaic battery includes at least one layer of a semiconductor material comprising at least one p/n junction, at least one absorption and conversion layer on the at least one layer of semiconductor layer, and at least one alpha particle emitter. The absorption and conversion layer prevents at least a portion of alpha particles from the alpha particle emitter from damaging the p/n junction in the layer of semiconductor material. The absorption and conversion layer also converts at least a portion of energy from the alpha particles into electron-hole pairs for collection by the one p/n junction in the layer of semiconductor material.Type: ApplicationFiled: March 29, 2005Publication date: October 20, 2005Inventors: Ryne Raffaelle, Phillip Jenkins, David Wilt, David Scheiman, Donald Chubb, Stephanie Castro