Patents by Inventor David Wisbey

David Wisbey has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Neutron detection using GD-loaded oxide and nitride heterojunction diodes
    Patent number: 8860161
    Abstract: Solid state neutron detection utilizing gadolinium as a neutron absorber is described. The new class of narrow-gap neutron-absorbing semiconducting materials, including Gd-doped HfO2, Gd-doped EuO, Gd-doped GaN, Gd2O3 and GdN are included in three types of device structures: (1) a p-n heterostructure diode with a ˜30 ?m Gd-loaded semiconductor grown on a conventional semiconductor (Si or B-doped Si); (2) a p-n junction or a p-i-n trilayer diode with a Gd-loaded semiconductoron one side and single-crystal semiconducting Li2B4O7 layer on the other side of the heterojunction; and (3) a p-n junction or a p-i-n trilayer diode with a Gd-loaded semiconductoron on one side and a boron nitride (BN) semiconductor layer on the other side of the heterojunction.
    Type: Grant
    Filed: July 5, 2012
    Date of Patent: October 14, 2014
    Assignee: Quantum Devices, LLC
    Inventors: Peter A. Dowben, Jinke Tang, David Wisbey
  • NEUTRON DETECTION USING GD-LOADED OXIDE AND NITRIDE HETEROJUNCTION DIODES
    Publication number: 20130009262
    Abstract: Solid state neutron detection utilizing gadolinium as a neutron absorber is described. The new class of narrow-gap neutron-absorbing semiconducting materials, including Gd-doped HfO2, Gd-doped EuO, Gd-doped GaN, Gd2O3 and GdN are included in three types of device structures: (1) a p-n heterostructure diode with a ˜30 ?m Gd-loaded semiconductor grown on a conventional semiconductor (Si or B-doped Si); (2) a p-n junction or a p-i-n trilayer diode with a Gd-loaded semiconductoron one side and single-crystal semiconducting Li2B4O7 layer on the other side of the heterojunction; and (3) a p-n junction or a p-i-n trilayer diode with a Gd-loaded semiconductoron on one side and a boron nitride (BN) semiconductor layer on the other side of the heterojunction.
    Type: Application
    Filed: July 5, 2012
    Publication date: January 10, 2013
    Applicant: QUANTUM DEVICES, LLC
    Inventors: PETER A. DOWBEN, Jinke Tang, David Wisbey