Abstract: A system to control gas flow includes an ampoule to store a solid precursor. A heater is to heat the ampoule and to sublimate the solid precursor into a gaseous precursor. A mass flow controller is to regulate a flow of gaseous precursor from the ampoule to a substrate processing chamber. A pressure sensor is to measure a pressure of the gaseous precursor input to the mass flow controller. A controller is to apply power to the electric heater using closed loop control based on the pressure and a pressure setpoint.

Abstract: A semiconductor substrate processing apparatus includes a chemical isolation chamber for processing a semiconductor substrate, a chemical delivery module, and a control module. The chemical delivery module is in fluid communication with the chamber and includes a canister oven, a control oven, and a heating element. The canister oven generates a process gas using a heated precursor. The control oven receives the process gas via a first gas line and supplies the process gas to the chamber via a second gas line. The first gas line extends between an inside surface of the canister oven and an inside surface of the control oven. The heating element heats a portion of the first gas line between the inside surface of the canister oven and the inside surface of the control oven. The controller module adjusts a heating temperature of the heating element based on a temperature of the portion.

Abstract: An apparatus for use in semiconductor processing operations to distribute process gases across a semiconductor wafer. The apparatus may include one or more annular baffles arranged in a stack of annular baffle layers within a plenum volume of the apparatus. Each annular baffle may have a mid-diameter substantially equal to and inner diameter or outer diameter of a baffle in the annular baffle layer above it. The annular baffles may be arranged in a cascading fashion.

Abstract: An apparatus for use in semiconductor processing operations to distribute process gases across a semiconductor wafer. The apparatus may include one or more annular baffles arranged in a stack of annular baffle layers within a plenum volume of the apparatus. Each annular baffle may have a mid-diameter substantially equal to and inner diameter or outer diameter of a baffle in the annular baffle layer above it. The annular baffles may be arranged in a cascading fashion.