Patents by Inventor Davood Shahjerdi

Davood Shahjerdi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Extremely thin semiconductor-on-insulator with back gate contact
    Patent number: 8890247
    Abstract: A structure is provided in which the back gate regions are physically separated from one another as opposed to using reversed biased pn junction diodes. In the present disclosure, the back gate regions can be formed first through a buried dielectric material of an extremely thin semiconductor-on-insulator (ETSOI) substrate. After dopant activation, standard device fabrication processes can be performed. A semiconductor base layer portion of the ETSOI substrate can then be removed from the original ETSOI to expose a surface of the back gates.
    Type: Grant
    Filed: October 15, 2012
    Date of Patent: November 18, 2014
    Assignee: International Business Machines Corporation
    Inventors: Stephen W. Bedell, Bahman Hekmatshoartabari, Ali Khakifirooz, Ghavam G. Shahidi, Davood Shahjerdi