Abstract: A shift register circuit includes a denoising control sub-circuit and a denoising sub-circuit. The denoting control sub-circuit is configured to generate an alternating voltage signal according to a voltage of a first voltage terminal and a signal of a second clock signal terminal in response to a signal of a first clock signal terminal, to rectify the alternating voltage signal and then to output a signal to a first denoising control node, so that the voltage of the first denoting control node is maintained to be a voltage that enables the denoising sub-circuit to be turned on. The denoting sub-circuit is configured to denoise a scan signal output terminal in response to a voltage of the first denoising control node being the voltage that enables the denoising sub-circuit to be turned on.

Abstract: The present disclosure provides a class of Pyridopyrimidine compounds having a structure shown in Formula (I) or their pharmaceutically acceptable salts, or stereoisomers or prodrug molecules and applications thereof. The compounds in the present disclosure can efficiently and selectively degrade AKT3 protein in cells without affecting AKT1/2, thereby significantly inhibiting tumor cell proliferation mediated by high expression of AKT3 protein. It can be used to prepare therapeutic drugs for cancer and other diseases related to abnormal expression of AKT3 protein.

Abstract: The disclosure relates to KRASG12D inhibitor compounds having the structure of Formula (A) or Formula (B), pharmaceutical compositions thereof, and methods of use thereof for inhibiting, treating, and/or preventing KRASG12D mutation-associated diseases, disorders and conditions.

Abstract: Embodiments of the present disclosure provide a datum selection method for minimizing hole position errors in group hole machining of large components, comprising: 1) determining a type of a computer numerical control (CNC) machine tool and establishing a topological structure of the CNC machine tool; 2) establishing a theoretical postural model of a tool center point during a motion; 3) establishing a hole position error model; 4) establishing an average error model of hole positions in group hole machining; and 5) obtaining a machining datum for group holes of corresponding components. For the skeleton and skinned group hole machining of aircraft components, different principles of datum selection are provided respectively, which can effectively improve the positional accuracy of the skeleton or skinned group hole machining, at the same time provides a more scientific and reasonable approach for the datum selection in group hole machining of large components.

Abstract: Embodiments of the present disclosure provide a datum selection method for minimizing hole position errors in group hole machining of large components, comprising: 1) determining a type of a computer numerical control (CNC) machine tool and establishing a topological structure of the CNC machine tool; 2) establishing a theoretical postural model of a tool center point during a motion; 3) establishing a hole position error model; 4) establishing an average error model of hole positions in group hole machining; and 5) obtaining a machining datum for group holes of corresponding components. For the skeleton and skinned group hole machining of aircraft components, different principles of datum selection are provided respectively, which can effectively improve the positional accuracy of the skeleton or skinned group hole machining, at the same time provides a more scientific and reasonable approach for the datum selection in group hole machining of large components.

Abstract: A method and apparatus for determining an outer loop value, a device, and a storage medium are disclosed. The method may include: determining a pre-trained outer loop initialization model based on current feature data of a user equipment (S11); and determining an initialized outer loop value of the user equipment based on a current air interface measurement value of the user equipment and the outer loop initialization model (S12).

Abstract: An optical device stack includes at least one of a photodetector or an optical emitter and a metasurface. The metasurface is disposed over a light-receiving surface of the photodetector or a light emission surface of the optical emitter. The metasurface includes a first conductive layer having an electrically-tunable optical property and an array of conductive nanostructures disposed on a first side of the first conductive layer. A second conductive layer is disposed on a second side of the first conductive layer. An electrical insulator is disposed between the first conductive layer and the second conductive layer. A change in an electrical bias between the metasurface and the second conductive layer, from a first electrical bias to a second electrical bias, tunes the electrically-tunable optical property from a first state to a second state, and changes an electrically-tunable optical filtering property of the metasurface.

Abstract: A method for predicting if a flow over a smooth ramp surface will separate from the ramp surface, wherein the ramp surface has a slope that is everywhere non-positive along the length of the ramp surface relative to the flow at the inflow end of the ramp surface includes i) dividing the height of the ramp surface by the length of the ramp surface to determine a height-to-length ratio of the ramp surface, ii) identifying a maximum slope magnitude of the ramp surface, iii) calculating a maximum normalized slope by dividing the maximum slope magnitude of the ramp surface by the height-to-length ratio of the ramp surface, and calculating a critical ramp slope as a linear function of the height-to-length ratio of the ramp surface. If the maximum normalized slope is greater than the critical ramp slope, the method predicts the turbulent boundary layer will separate from the ramp surface.

Abstract: An electronic device has pixels that form an active area of a display for displaying images for a user. A layer of black ink or other opaque material may be formed on an inner surface of a display cover layer in an inactive area of the display that does not overlap pixels. The housing may have sidewalls such as a rear housing wall that faces away from the display. Ambient light sensor windows may be formed from tapered holes or other holes. The tapered holes may be formed in the opaque material on the display cover layer, may be formed in a rear housing wall or other hosing structure, or may be formed in other portions of the electronic device. Non-tapered holes may also form windows. Tapered holes may have sidewalls with portions that run parallel to their longitudinal axes and portions that are angled relative to their longitudinal axes.

Abstract: An optical device stack includes at least one of a photodetector or an optical emitter and a metasurface. The metasurface is disposed over a light-receiving surface of the photodetector or a light emission surface of the optical emitter. The metasurface includes a first conductive layer having an electrically-tunable optical property and an array of conductive nanostructures disposed on a first side of the first conductive layer. A second conductive layer is disposed on a second side of the first conductive layer. An electrical insulator is disposed between the first conductive layer and the second conductive layer. A change in an electrical bias between the metasurface and the second conductive layer, from a first electrical bias to a second electrical bias, tunes the electrically-tunable optical property from a first state to a second state, and changes an electrically-tunable optical filtering property of the metasurface.

Abstract: An optical device stack includes at least one of a photodetector or an optical emitter and a metasurface. The metasurface is disposed over a light-receiving surface of the photodetector or a light emission surface of the optical emitter. The metasurface includes a first conductive layer having an electrically-tunable optical property and an array of conductive nanostructures disposed on a first side of the first conductive layer. A second conductive layer is disposed on a second side of the first conductive layer. An electrical insulator is disposed between the first conductive layer and the second conductive layer. A change in an electrical bias between the metasurface and the second conductive layer, from a first electrical bias to a second electrical bias, tunes the electrically-tunable optical property from a first state to a second state, and changes an electrically-tunable optical filtering property of the metasurface.

Abstract: An electronic device has pixels that form an active area of a display for displaying images for a user. A layer of black ink or other opaque material may be formed on an inner surface of a display cover layer in an inactive area of the display that does not overlap pixels. The housing may have sidewalls such as a rear housing wall that faces away from the display. Ambient light sensor windows may be formed from tapered holes or other holes. The tapered holes may be formed in the opaque material on the display cover layer, may be formed in a rear housing wall or other hosing structure, or may be formed in other portions of the electronic device. Non-tapered holes may also form windows. Tapered holes may have sidewalls with portions that run parallel to their longitudinal axes and portions that are angled relative to their longitudinal axes.

Abstract: An electronic device has pixels that form an active area of a display for displaying images for a user. A layer of black ink or other opaque material may be formed on an inner surface of a display cover layer in an inactive area of the display that does not overlap pixels. The housing may have sidewalls such as a rear housing wall that faces away from the display. Ambient light sensor windows may be formed from tapered holes or other holes. The tapered holes may be formed in the opaque material on the display cover layer, may be formed in a rear housing wall or other hosing structure, or may be formed in other portions of the electronic device. Non-tapered holes may also form windows. Tapered holes may have sidewalls with portions that run parallel to their longitudinal axes and portions that are angled relative to their longitudinal axes.

Abstract: Embodiments of the invention include a semiconductor light emitting device including a semiconductor structure. The semiconductor structure includes a light emitting layer disposed between an n-type region and a p-type region. A wavelength converting structure is disposed in a path of light emitted by the light emitting layer. A diffuse reflector is disposed along a sidewall of the semiconductor light emitting device and the wavelength converting structure. The diffuse reflector includes a pigment. A reflective layer is disposed between the diffuse reflector and the semiconductor structure. The reflective layer is a different material from the diffuse reflector.

Abstract: An electronic device has pixels that form an active area of a display for displaying images for a user. A layer of black ink or other opaque material may be formed on an inner surface of a display cover layer in an inactive area of the display that does not overlap pixels. The housing may have sidewalls such as a rear housing wall that faces away from the display. Ambient light sensor windows may be formed from tapered holes or other holes. The tapered holes may be formed in the opaque material on the display cover layer, may be formed in a rear housing wall or other hosing structure, or may be formed in other portions of the electronic device. Non-tapered holes may also form windows. Tapered holes may have sidewalls with portions that run parallel to their longitudinal axes and portions that are angled relative to their longitudinal axes.

Abstract: Embodiments of the invention include a semiconductor light emitting device including a semiconductor structure. The semiconductor structure includes a light emitting layer disposed between an n-type region and a p-type region. A wavelength converting structure is disposed in a path of light emitted by the light emitting layer. A diffuse reflector is disposed along a sidewall of the semiconductor light emitting device and the wavelength converting structure. The diffuse reflector includes a pigment. A reflective layer is disposed between the diffuse reflector and the semiconductor structure. The reflective layer is a different material from the diffuse reflector.

Abstract: Embodiments of the invention include a semiconductor light emitting device including a semiconductor structure. The semiconductor structure includes a light emitting layer disposed between an n-type region and a p-type region. A wavelength converting structure is disposed in a path of light emitted by the light emitting layer. A diffuse reflector is disposed along a sidewall of the semiconductor light emitting device and the wavelength converting structure. The diffuse reflector includes a pigment. A reflective layer is disposed between the diffuse reflector and the semiconductor structure. The reflective layer is a different material from the diffuse reflector.

Abstract: Embodiments of the invention include a semiconductor light emitting device including a semiconductor structure. The semiconductor structure includes a light emitting layer disposed between an n-type region and a p-type region. A wavelength converting structure is disposed in a path of light emitted by the light emitting layer. A diffuse reflector is disposed along a sidewall of the semiconductor light emitting device and the wavelength converting structure. The diffuse reflector includes a pigment. A reflective layer is disposed between the diffuse reflector and the semiconductor structure. The reflective layer is a different material from the diffuse reflector.

Abstract: Embodiments of the invention include a semiconductor light emitting device including a semiconductor structure. The semiconductor structure includes a light emitting layer disposed between an n-type region and a p-type region. A wavelength converting structure is disposed in a path of light emitted by the light emitting layer. A diffuse reflector is disposed along a sidewall of the semiconductor light emitting device and the wavelength converting structure. The diffuse reflector includes a pigment. A reflective layer is disposed between the diffuse reflector and the semiconductor structure. The reflective layer is a different material from the diffuse reflector.

Abstract: Embodiments of the invention include a semiconductor light emitting device including a semiconductor structure. The semiconductor structure includes a light emitting layer disposed between an n-type region and a p-type region. A wavelength converting structure is disposed in a path of light emitted by the light emitting layer. A diffuse reflector is disposed along a sidewall of the semiconductor light emitting device and the wavelength converting structure. The diffuse reflector includes a pigment. A reflective layer is disposed between the diffuse reflector and the semiconductor structure. The reflective layer is a different material from the diffuse reflector.