Patents by Inventor Daxing Ren

Daxing Ren has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 8789493
    Abstract: An electrode assembly for a plasma reaction chamber used in semiconductor substrate processing having a backing member having a bonding surface, an inner electrode having a lower surface on one side and a bonding surface on the other side, and an outer electrode having a lower surface on one side and a bonding surface on the other side. At least one of the electrodes has a flange, which extends underneath at least a portion of the lower surface of the other electrode.
    Type: Grant
    Filed: February 13, 2006
    Date of Patent: July 29, 2014
    Assignee: Lam Research Corporation
    Inventors: Daxing Ren, Enrico Magni, Eric Lenz, Ren Zhou
  • Publication number: 20140148013
    Abstract: An actively heated aluminum baffle component such as a thermal control plate or baffle ring of a showerhead electrode assembly of a plasma processing chamber has an exposed outer aluminum oxide layer which is formed by an electropolishing procedure. The exposed outer aluminum oxide layer minimizes defects and particles generated as a result of differential thermal stresses experienced by the aluminum component and outer aluminum oxide layer during plasma processing compared to an identically shaped component having a Type III anodized surface.
    Type: Application
    Filed: February 3, 2014
    Publication date: May 29, 2014
    Applicant: Lam Research Corporation
    Inventors: Hong Shih, G. Grant Peng, Daxing Ren
  • Patent number: 8679252
    Abstract: An actively heated aluminum baffle component such as a thermal control plate or baffle ring of a showerhead electrode assembly of a plasma processing chamber has an exposed outer aluminum oxide layer which is formed by an electropolishing procedure. The exposed outer aluminum oxide layer minimizes defects and particles generated as a result of differential thermal stresses experienced by the aluminum component and outer aluminum oxide layer during plasma processing compared to an identically shaped component having a Type III anodized surface.
    Type: Grant
    Filed: September 23, 2005
    Date of Patent: March 25, 2014
    Assignee: Lam Research Corporation
    Inventors: Hong Shih, G. Grant Peng, Daxing Ren
  • Publication number: 20100205045
    Abstract: A system and method for improving and maintaining retail store customer loyalty through providing customers with quality services, timely assistances, and conveniences in all stages of product shopping. The system provides a web parts based collaborative online platform for retailers, product manufacturers, and service providers to share resources, distribute coupons, promote products and services, and communicate with customers. It further provides shopping assistances to help customers selectively receive coupons, redeem coupons online, build shopping lists online, retrieve shopping list and shopping reminders, find product shelf locations, place online orders, and manage budgets and nutrition. The system has the capability to collect customer shopping activity data, automatically analyze customer product purchase preferences, recommend products and services, and deliver relevant coupons and advertisements to customers.
    Type: Application
    Filed: February 5, 2010
    Publication date: August 12, 2010
    Inventors: Yinying Zhang, Daxing Ren
  • Publication number: 20100138281
    Abstract: A system for retail store shelf stock status monitoring, predicting, and reporting that is capable of monitoring retail store current shelf stock capacity and shelf product freshness at product level, category level, department level, store level, and other product hierarchy levels. It is also capable of intelligently predicting future shelf stock status according to predicted future store sales activities. It uses shelf stock empty index, out-of-stock alert, shelf stock freshness, shelf stock expiration alert, and other shelf stock performance measures to present current shelf status, future shelf status, and past shelf stock performances through interactive store maps and other visual presentation means to optimally deliver retail store shelf stock performance information in real time. The system empowers store clerks, store managers, chain store management, and corporation analysts to monitor, review, and analyze store shelf stock status in real time from anywhere at any time.
    Type: Application
    Filed: November 10, 2009
    Publication date: June 3, 2010
    Inventors: Yinying Zhang, Daxing Ren
  • Patent number: 7517803
    Abstract: Silicon parts of a semiconductor processing apparatus containing low levels of metal impurities that are highly mobile in silicon are provided. The silicon parts include, for example, rings, electrodes and electrode assemblies. The silicon parts can reduce metal contamination of wafers processed in plasma atmospheres.
    Type: Grant
    Filed: September 28, 2004
    Date of Patent: April 14, 2009
    Assignee: Lam Research Corporation
    Inventors: Daxing Ren, Jerome S. Hubacek, Nicholas E. Webb
  • Patent number: 7498269
    Abstract: Silicon electrode assembly decontamination cleaning methods and solutions, which control or eliminate possible chemical attacks of electrode assembly bonding materials, comprise ammonium fluoride, hydrogen peroxide, acetic acid, optionally ammonium acetate, and deionized water.
    Type: Grant
    Filed: June 21, 2007
    Date of Patent: March 3, 2009
    Assignee: Lam Research Corporation
    Inventors: Daxing Ren, Hong Shih
  • Patent number: 7442114
    Abstract: Methods for cleaning an electrode assembly, which can be used for etching a dielectric material in a plasma etching chamber after the cleaning, comprise polishing a silicon surface of the electrode assembly, preferably to remove black silicon contamination therefrom.
    Type: Grant
    Filed: December 23, 2004
    Date of Patent: October 28, 2008
    Assignee: Lam Research Corporation
    Inventors: Tuochuan Huang, Daxing Ren, Hong Shih, Catherine Zhou, Chun Yan, Enrico Magni, Bi Ming Yen, Jerome Hubacek, Dae J. Lim, Dougyong Sung
  • Publication number: 20080023029
    Abstract: Methods of making silicon carbide components of a plasma processing apparatus, and methods of using the components during processing of semiconductor substrates to provide for reduced particle contamination of the substrates, are provided. The silicon carbide components are made by a process that results in free-carbon in the components. The silicon carbide components are treated to remove the free-carbon.
    Type: Application
    Filed: July 20, 2007
    Publication date: January 31, 2008
    Applicant: Lam Research Corporation
    Inventor: Daxing Ren
  • Publication number: 20080015132
    Abstract: Silicon electrode assembly decontamination cleaning methods and solutions, which control or eliminate possible chemical attacks of electrode assembly bonding materials, comprise ammonium fluoride, hydrogen peroxide, acetic acid, optionally ammonium acetate, and deionized water.
    Type: Application
    Filed: June 21, 2007
    Publication date: January 17, 2008
    Applicant: Lam Research Corporation
    Inventors: Daxing Ren, Hong Shih
  • Patent number: 7267741
    Abstract: Silicon carbide components of a plasma processing apparatus, methods of making the components, and methods of using the components during processing of semiconductor substrates to provide for reduced particle contamination of the substrates are provided. The silicon carbide components are made by a process that results in free-carbon in the components. The silicon carbide components are treated to remove the free-carbon from at least the surface.
    Type: Grant
    Filed: November 14, 2003
    Date of Patent: September 11, 2007
    Assignee: Lam Research Corporation
    Inventor: Daxing Ren
  • Publication number: 20070187038
    Abstract: An electrode assembly for a plasma reaction chamber used in semiconductor substrate processing having a backing member having a bonding surface, an inner electrode having a lower surface on one side and a bonding surface on the other side, and an outer electrode having a lower surface on one side and a bonding surface on the other side. At least one of the electrodes has a flange, which extends underneath at least a portion of the lower surface of the other electrode.
    Type: Application
    Filed: February 13, 2006
    Publication date: August 16, 2007
    Inventors: Daxing Ren, Enrico Magni, Eric Lenz, Ren Zhou
  • Patent number: 7247579
    Abstract: Silicon electrode assembly decontamination cleaning methods and solutions, which control or eliminate possible chemical attacks of electrode assembly bonding materials, comprise ammonium fluoride, hydrogen peroxide, acetic acid, optionally ammonium acetate, and deionized water.
    Type: Grant
    Filed: December 23, 2004
    Date of Patent: July 24, 2007
    Assignee: Lam Research Corporation
    Inventors: Daxing Ren, Hong Shih
  • Publication number: 20070068629
    Abstract: An actively heated aluminum baffle component such as a thermal control plate or baffle ring of a showerhead electrode assembly of a plasma processing chamber has an exposed outer aluminum oxide layer which is formed by an electropolishing procedure. The exposed outer aluminum oxide layer minimizes defects and particles generated as a result of differential thermal stresses experienced by the aluminum component and outer aluminum oxide layer during plasma processing compared to an identically shaped component having a Type III anodized surface.
    Type: Application
    Filed: September 23, 2005
    Publication date: March 29, 2007
    Inventors: Hong Shih, G. Peng, Daxing Ren
  • Publication number: 20060141787
    Abstract: Silicon electrode assembly decontamination cleaning methods and solutions, which control or eliminate possible chemical attacks of electrode assembly bonding materials, comprise ammonium fluoride, hydrogen peroxide, acetic acid, optionally ammonium acetate, and deionized water.
    Type: Application
    Filed: December 23, 2004
    Publication date: June 29, 2006
    Inventors: Daxing Ren, Hong Shih
  • Publication number: 20060138081
    Abstract: Methods for cleaning an electrode assembly, which can be used for etching a dielectric material in a plasma etching chamber after the cleaning, comprise polishing a silicon surface of the electrode assembly, preferably to remove black silicon contamination therefrom.
    Type: Application
    Filed: December 23, 2004
    Publication date: June 29, 2006
    Inventors: Tuochuan Huang, Daxing Ren, Hong Shih, Catherine Zhou, Chun Yan, Enrico Magni, Bi Yen, Jerome Hubacek, Dae Lim, Dougyong Sung
  • Publication number: 20050106884
    Abstract: Silicon carbide components of a plasma processing apparatus, methods of making the components, and methods of using the components during processing of semiconductor substrates to provide for reduced particle contamination of the substrates are provided. The silicon carbide components are made by a process that results in free-carbon in the components. The silicon carbide components are treated to remove the free-carbon from at least the surface.
    Type: Application
    Filed: November 14, 2003
    Publication date: May 19, 2005
    Inventor: Daxing Ren
  • Publication number: 20050045593
    Abstract: Silicon parts of a semiconductor processing apparatus containing low levels of metal impurities that are highly mobile in silicon are provided. The silicon parts include, for example, rings, electrodes and electrode assemblies. The silicon parts can reduce metal contamination of wafers processed in plasma atmospheres.
    Type: Application
    Filed: September 28, 2004
    Publication date: March 3, 2005
    Inventors: Daxing Ren, Jerome Hubacek, Nicholas Webb
  • Patent number: 6846726
    Abstract: Silicon parts of a semiconductor processing apparatus containing low levels of metal impurities that are highly mobile in silicon are provided. The silicon parts include, for example, rings, electrodes and electrode assemblies. The silicon parts can reduce metal contamination of wafers processed in plasma atmospheres.
    Type: Grant
    Filed: September 20, 2002
    Date of Patent: January 25, 2005
    Assignee: Lam Research Corporation
    Inventors: Daxing Ren, Jerome S. Hubacek, Nicholas E. Webb
  • Patent number: 6780569
    Abstract: A method for creating semiconductor devices is provided. A photoresist layer is provided on a wafer. The photoresist layer is patterned. Polymers in the patterned photoresist layer are chemically cross-linked by exposure to at least one reactive chemical. The pattern in the photoresist layer is transferred to the wafer. A reaction chamber for processing a wafer with a patterned layer of photoresist material, wherein the photoresist material was patterned by exposing the photoresist material using light of a wavelength less than 248 nm is provided. A chamber is provided with a central cavity. A wafer support for supporting the wafer in the central cavity is provided. A cross-linking reactive chemical source in fluid contact with the chamber and which provides a reactive chemical which causes cross-linking of the photoresist is provided.
    Type: Grant
    Filed: February 4, 2002
    Date of Patent: August 24, 2004
    Assignee: Lam Research Corporation
    Inventors: Eric Hudson, Reza Sadjadi, Daxing Ren, Wan-Lin Chen, Douglas Keil, Peter Cirigliano