Patents by Inventor De-xiang Huang

De-xiang Huang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 5393351
    Abstract: Multijunction thermal converters are formed in an integral multifilm membrane form over a through opening in a nonmagnetic, dielectric substrate. Through the use of conventional photolithographic and etching techniques, very compact, rugged and precise integrated structures are formed to include either single linear elongate heater elements, bifilar or trifilar heater elements, and multijunction thermopiles at reasonable cost. Disposition of the heater element and hot junctions of the thermopiles over a through opening in the substrate, with the cold junctions of the thermopiles disposed over the substrate thickness, enables the heating element to provide a substantially isothermal uniform heating of the thermocouple hot junctions to obtain high thermal efficiency and reduce Thompson and Peltier heating effects. Forming the essential elements into an integrated multifilm membrane also makes possible minimization of interconnections between the elements, and this results in minimized reactance.
    Type: Grant
    Filed: January 13, 1993
    Date of Patent: February 28, 1995
    Assignee: The United States of America as represented by the Secretary of Commerce
    Inventors: Joseph R. Kinard, De-xiang Huang, Donald B. Novotny
  • Patent number: 5287081
    Abstract: Multilayer, thin film multijunction integrated micropotentiometers are formed in an integral multifilm membrane form over a through opening in a nonmagnetic, dielectric substrate. Through the use of conventional photolithographic and etching techniques, integrated structures are formed to include either single elongate heater elements, bifilar heater elements, or trifilar heater elements with multiple return paths. Multijunction thermopiles and resistors are formed with the heater. The individual layers of silicon oxide or silicon nitride, are formed with conventional chemical vapor deposition, sputtering and other known techniques.
    Type: Grant
    Filed: January 13, 1993
    Date of Patent: February 15, 1994
    Assignee: The United States of America as represented by the Secretary of Commerce
    Inventors: Joseph R. Kinard, De-xiang Huang, Donald B. Novotny