Patents by Inventor De-Yu Shen

De-Yu Shen has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Memory with multiple levels of data retention
    Patent number: 9171616
    Abstract: A method for operating a memory includes receiving a command to program a data value at a memory cell, and an indication of which write mode in a plurality of write modes to use. Write modes in the plurality are characterized by different sets of resistance ranges that correspond to data values stored in the memory cell. The method includes executing a program operation according to the indicated one in the plurality of write modes to program the data value in the memory cell. The plurality of write modes includes a first write mode and a second write mode corresponding to shorter data retention than the first write mode. The first and second write modes are characterized by first and second sets of resistance ranges in the different sets of resistance ranges. The method includes periodically refreshing data values in memory cells storing data in the second write mode.
    Type: Grant
    Filed: January 27, 2014
    Date of Patent: October 27, 2015
    Assignee: Macronix International Co., Ltd.
    Inventors: Ren-Shuo Liu, De-Yu Shen, Chia-Lin Yang, Ye-Jyun Lin, Cheng-Yuan Wang
  • MEMORY WITH MULTIPLE LEVELS OF DATA RETENTION
    Publication number: 20150043274
    Abstract: A method for operating a memory includes receiving a command to program a data value at a memory cell, and an indication of which write mode in a plurality of write modes to use. Write modes in the plurality are characterized by different sets of resistance ranges that correspond to data values stored in the memory cell. The method includes executing a program operation according to the indicated one in the plurality of write modes to program the data value in the memory cell. The plurality of write modes includes a first write mode and a second write mode corresponding to shorter data retention than the first write mode. The first and second write modes are characterized by first and second sets of resistance ranges in the different sets of resistance ranges. The method includes periodically refreshing data values in memory cells storing data in the second write mode.
    Type: Application
    Filed: January 27, 2014
    Publication date: February 12, 2015
    Applicant: MACRONIX INTERNATIONAL CO., LTD.
    Inventors: Ren-Shuo Liu, De-Yu Shen, Chia-Lin Yang, Ye-Jyun Lin, Cheng-Yuan Wang