Abstract: A process monitoring system (100) for monitoring a plasma processing system. The process monitoring system (100) includes a plurality of processing subsystems (120), and a control system (110) coupled to the processing subsystems (120). The control system (110) is configured to receive monitor data from the processing subsystems (120) and send control data to the processing subsystems (120). The process monitoring system (100) also includes an external interface (140) coupled to the control system (110), where the external interface (140) includes a paging system. The process monitoring system further includes a man-machine interface (MMI) coupled to the control system (110). The MMI is configured to display the monitor data, display the control data, and access the paging system.

Abstract: Integrated voltage and current (VI) probe (18) for integration inside a transmission line (17) having inner (3) and an outer (4) conductors. Current probes, often implemented as loop antennas, can be coupled to the outer conductor. The probes can either be built onto the same panel or on different panels.

Abstract: A method and system for determining an endpoint in a (near) real-time environment using statistical process control. By utilizing such control, an endpoint of a semiconductor process (e.g., an etch) can be monitored. Monitoring may lead to increased yields by avoiding or reducing error conditions (e.g., under- or over-etching).

Abstract: The facility monitor (670) is used to monitor and collect measured parameter data and alarm status data for a facility (615), such as a semiconductor processing facility. A graphical user interface (GUI) is used for monitoring the current status (625) and accessing the system history of the facility (645). The GUI provides easily readable screens where the graphical display is organized so that the measured parameter data is logically presented to the user, alarm status data are clearly indicated to the user, and the user can efficiently review the data and respond.

Abstract: A process monitoring system (100) for monitoring a plasma processing system. The process monitoring system (100) includes a plurality of processing subsystems (120), and a control system (110) coupled to the processing subsystems (120). The control system (110) is configured to receive monitor data from the processing subsystems (120) and send control data to the processing subsystems (120). The process monitoring system (100) also includes an external interface (140) coupled to the control system (110), where the external interface (140) includes a paging system. The process monitoring system further includes a man-machine interface (MMI) coupled to the control system (110). The MMI is configured to display the monitor data, display the control data, and access the paging system.