Patents by Inventor Debra A. Desrochers

Debra A. Desrochers has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Low temperature chemical vapor deposition process for forming bismuth-containing ceramic thin films useful in ferroelectric memory devices
    Patent number: 7005303
    Abstract: A low temperature CVD process for deposition of bismuth-containing ceramic thin films suitable for integration to fabricate ferroelectric memory devices. The bismuth-containing film can be formed using a tris(?-diketonate) bismuth precursor. Films of amorphous SBT can be formed by CVD and then ferroannealed to produce films with Aurivillius phase composition having superior ferroelectric properties suitable for manufacturing high density FRAMs.
    Type: Grant
    Filed: April 30, 2004
    Date of Patent: February 28, 2006
    Assignee: Advanced Technology Materials, Inc.
    Inventors: Frank S. Hintermaier, Christine Dehm, Wolfgang Hoenlein, Peter C. Van Buskirk, Jeffrey F. Roeder, Bryan C. Hendrix, Thomas H. Baum, Debra A. Desrochers
  • Low temperature chemical vapor deposition process for forming bismuth-containing ceramic thin films useful in ferroelectric memory devices
    Publication number: 20040209384
    Abstract: A low temperature CVD process for deposition of bismuth-containing ceramic thin films suitable for integration to fabricate ferroelectric memory devices. The bismuth-containing film can be formed using a tris(&bgr;-diketonate) bismuth precursor. Films of amorphous SBT can be formed by CVD and then ferroannealed to produce films with Aurivillius phase composition having superior ferroelectric properties suitable for manufacturing high density FRAMs.
    Type: Application
    Filed: April 30, 2004
    Publication date: October 21, 2004
    Inventors: Frank S. Hintermaier, Christine Dehm, Wolfgang Hoenlein, Peter C. Van Buskirk, Jeffrey F. Roeder, Bryan C. Hendrix, Thomas H. Baum, Debra A. Desrochers
  • Low temperature chemical vapor deposition process for forming bismuth-containing ceramic thin films useful in ferroelectric memory devices
    Patent number: 6730523
    Abstract: A low temperature CVD process using a tris (&bgr;-diketonate) bismuth precursor for deposition of bismuth ceramic thin films suitable for integration to fabricate ferroelectric memory devices. Films of amorphous SBT can be formed by CVD and then ferroannealed to produce films with Aurivillius phase composition having superior ferroelectric properties suitable for manufacturing high density FRAMs.
    Type: Grant
    Filed: June 1, 2001
    Date of Patent: May 4, 2004
    Assignees: Advanced Technology Materials, Inc., Siemens Aktiengesellschaft
    Inventors: Frank S. Hintermaier, Christine Dehm, Wolfgang Hoenlein, Peter C. Van Buskirk, Jeffrey F. Roeder, Bryan C. Hendrix, Thomas H. Baum, Debra A. Desrochers
  • Textured Bi-based oxide ceramic films
    Patent number: 6713797
    Abstract: A non-volatile memory cell wherein the capacitor comprises a Bi-based metal oxide having a crystallographic texture to produce high switchable polarization.
    Type: Grant
    Filed: November 23, 1998
    Date of Patent: March 30, 2004
    Assignees: Advanced Technology Materials, Inc., Infineon Technologies North America Corp.
    Inventors: Debra A. Desrochers, Bryan C. Hendrix, Jeffrey F. Roeder, Frank S. Hintermaier
  • MOCVD of SBT using toluene-based solvent system for precursor delivery
    Patent number: 6660331
    Abstract: A solvent composition useful for liquid delivery MOCVD, comprising toluene and a Lewis base, wherein toluene is present at a concentration of from about 75% to about 98% by volume, based on the total volume of toluene and the Lewis base. Such solvent composition is usefully employed to dissolve or suspend precursors therein for liquid delivery MOCVD, e.g., MOCVD of ferroelectric material films such as SBT.
    Type: Grant
    Filed: December 7, 2001
    Date of Patent: December 9, 2003
    Assignee: Advanced Technology Materials, Inc.
    Inventors: Bryan C. Hendrix, Thomas H. Baum, Debra Desrochers Christos, Jeffrey F. Roeder
  • MOCVD of SBT using tetrahydrofuran-based solvent system for precursor delivery
    Patent number: 6511706
    Abstract: A precursor composition useful for liquid delivery MOCVD, including SBT precursors dissolved in a solvent system containing tetrahydrofuran. The associated liquid delivery MOCVD process may be carried out with vaporization of the precursor composition on a porous vaporization element having an average pore diameter in the range of from about 50 to about 200 micrometers, with the resultant precursor vapor being admixed with a carrier gas to achieve high efficiency formation of SBT films.
    Type: Grant
    Filed: November 16, 1999
    Date of Patent: January 28, 2003
    Assignee: Advanced Technology Materials, Inc.
    Inventors: Bryan C. Hendrix, Thomas H. Baum, Debra A. Desrochers-Christos, Jeffrey F. Roeder, Witold Paw
  • Low temperature CVD processes for preparing ferroelectric films using Bi alcoxides
    Patent number: 6500489
    Abstract: Chemical vapor deposition is used to form a film of Bi oxide, Sr oxide, and Ta oxide on a heated substrate by decomposing the precursors of these oxides at the surface of the substrate. The precursor of Bi oxide is a Bi complex which includes at least one alkoxide group and is decomposed and deposited at a temperature lower than 450° C. The film of Bi, Sr, and Ta oxides obtained by low-temperature CVD is predominantly non-ferroelectric, but can be converted into a ferroelectric film by a subsequent heating process.
    Type: Grant
    Filed: December 9, 1998
    Date of Patent: December 31, 2002
    Assignees: Advanced Technology Materials, Inc., Infineon Technologies Corporation
    Inventors: Frank S. Hintermaier, Peter C. Van Buskirk, Jeffrey F. Roeder, Bryan C. Hendrix, Thomas H. Baum, Debra A. Desrochers
  • MOCVD of SBT using toluene-based solvent system for precursor delivery
    Publication number: 20020068129
    Abstract: A solvent composition useful for liquid delivery MOCVD, comprising toluene and a Lewis base, wherein toluene is present at a concentration of from about 75% to about 98% by volume, based on the total volume of toluene and the Lewis base. Such solvent composition is usefully employed to dissolve or suspend precursors therein for liquid delivery MOCVD, e.g., MOCVD of ferroelectric material films such as SBT.
    Type: Application
    Filed: December 7, 2001
    Publication date: June 6, 2002
    Inventors: Bryan C. Hendrix, Thomas H. Baum, Debra A. Desrochers, Jeffrey F. Roeder
  • Reduced degradation of metal oxide ceramic due to diffusion of a mobile specie therefrom
    Patent number: 6350643
    Abstract: Reduced diffusion of excess mobile specie from a metal oxide ceramic is achieved by tailoring the composition an/or deposition parameters. A barrier layer which reacts with the excess mobile specie is provided below the metal oxide ceramic to prevent or reduce the diffusion of the excess mobile specie through the bottom electrode and into the substrate.
    Type: Grant
    Filed: December 18, 1998
    Date of Patent: February 26, 2002
    Assignees: Advanced Technology Materials, Inc., Infineon Technologies Corporation
    Inventors: Frank S. Hintermaier, Jeffrey F. Roeder, Bryan C. Hendrix, Debra A. Desrochers, Thomas H. Baum
  • MOCVD of SBT using toluene based solvent system for precursor delivery
    Patent number: 6340386
    Abstract: A solvent composition useful for liquid delivery MOCVD, comprising toluene and a Lewis base, wherein toluene is present at a concentration of from about 75% to about 98% by volume, based on the total volume of toluene and the Lewis base. Such solvent composition is usefully employed to dissolve or suspend precursors therein for liquid delivery MOCVD, e.g., MOCVD of ferroelectric material films such as SBT.
    Type: Grant
    Filed: November 15, 1999
    Date of Patent: January 22, 2002
    Assignee: Advanced Technology Materials, Inc.
    Inventors: Bryan C. Hendrix, Thomas H. Baum, Debra Desrochers Christos, Jeffrey F. Roeder
  • Low temperature chemical vapor deposition process for forming bismuth-containing ceramic thin films useful in ferroelectric memory devices
    Publication number: 20010041374
    Abstract: A low temperature CVD process using a tris (&bgr;-diketonate) bismuth precursor for deposition of bismuth ceramic thin films suitable for integration to fabricate ferroelectric memory devices. Films of amorphous SBT can be formed by CVD and then ferroannealed to produce films with Aurivillius phase composition having superior ferroelectric properties suitable for manufacturing high density FRAMs.
    Type: Application
    Filed: June 1, 2001
    Publication date: November 15, 2001
    Applicant: Advanced Technology Materials, Inc.
    Inventors: Frank S. Hintermaier, Christine Dehm, Wolfgang Hoenlein, Peter C. Van Buskirk, Jeffrey F. Roeder, Bryan C. Hendrix, Thomas H. Baum, Debra A. Desrochers
  • Low temperature chemical vapor deposition process for forming bismuth-containing ceramic films useful in ferroelectric memory devices
    Patent number: 6303391
    Abstract: A low temperature CVD process using a tris (&bgr;-diketonate) bismuth precursor for deposition of bismuth ceramic thin films suitable for integration to fabricate ferroelectric memory devices. Films of amorphous SBT can be formed by CVD and then ferroannealed to produce films with Aurivillius phase composition having superior ferroelectric properties suitable for manufacturing high density FRAMs.
    Type: Grant
    Filed: November 20, 1997
    Date of Patent: October 16, 2001
    Assignees: Advanced Technology Materials, Inc., Siemens Aktiengesellschaft
    Inventors: Frank S. Hintermaier, Christine Dehm, Wolfgang Hoenlein, Peter C. Van Buskirk, Jeffrey F. Roeder, Bryan C. Hendrix, Thomas H. Baum, Debra A. Desrochers
  • Reduced diffusion of a mobile specie from a metal oxide ceramic into the substrate
    Patent number: 6204158
    Abstract: A scavenger layer is provided to prevent the diffusion of an excess mobile specie from a metal oxide ceramic into unwanted parts of a device. The scavenger layer is provided above the metal oxide ceramic. As the excess mobile specie diffuses out of the metal oxide ceramic, it migrates toward the scavenger layer and reacts with it. The reaction consumes the excess mobile specie.
    Type: Grant
    Filed: December 18, 1998
    Date of Patent: March 20, 2001
    Assignees: Advanced Technology Materials, Inc., Infineon Technologies North America Corp.
    Inventors: Bryan C. Hendrix, Frank S. Hintermaier, Jeffrey F. Roeder, Thomas H. Baum, Debra A. Desrochers
  • Low temperature CVD processes for preparing ferroelectric films using Bi carboxylates
    Patent number: 6180420
    Abstract: Chemical vapor deposition is used to form a film of Bi oxide, Sr oxide, and Ta oxide on a heated substrate by decomposing the precursors of these oxides at the surface of the substrate. The precursor of Bi oxide is a Bi complex which includes at least one carboxylate group and is decomposed and deposited at a temperature lower than 450° C. The film of Bi, Sr, and Ta oxides obtained by low-temperature CVD is predominantly non-ferroelectric, but can be converted into a ferroelectric film by a subsequent heating process.
    Type: Grant
    Filed: December 9, 1998
    Date of Patent: January 30, 2001
    Assignee: Advanced Technology Materials, Inc.
    Inventors: Frank S. Hintermaier, Peter C. Van Buskirk, Jeffrey F. Roeder, Bryan C. Hendrix, Thomas H. Baum, Debra A. Desrochers
  • Low temperature CVD processes for preparing ferroelectric films using Bi amides
    Patent number: 6177135
    Abstract: Chemical vapor deposition is used to form a film of Bi oxide, Sr oxide, and Ta oxide on a heated substrate by decomposing the precursors of these oxides at the surface of the substrate. The precursor of Bi oxide is a Bi complex which includes at least one amide group and is decomposed and deposited at a temperature lower than 450° C. The film of Bi, Sr, and Ta oxides obtained by low-temperature CVD is predominantly non-ferroelectric, but can be converted into a ferroelectric film by a subsequent heating process.
    Type: Grant
    Filed: December 9, 1998
    Date of Patent: January 23, 2001
    Assignee: Advanced Technology Materials, Inc.
    Inventors: Frank S. Hintermaier, Peter C. Van Buskirk, Jeffrey F. Roeder, Bryan C. Hendrix, Thomas H. Baum, Debra A. Desrochers
  • Amorphously deposited metal oxide ceramic films
    Patent number: 6133051
    Abstract: A metal oxide ceramic layer is formed from an amorphous film. The metal oxide ceramic layer comprises, for example, a Bi-based oxide ceramic, The amorphous Bi-based metal oxide layer is annealed to transformed it into a ferroelectric layer. A lower thermal budget is needed to transform the amorphous Bi-based metal oxide ceramic into the ferroelectric phase.
    Type: Grant
    Filed: June 30, 1998
    Date of Patent: October 17, 2000
    Assignee: Advanced Technology Materials, Inc.
    Inventors: Frank S. Hintermaier, Bryan C. Hendrix, Jeffrey F. Roeder, Debra A. Desrochers, Thomas H. Baum