Abstract: A method and system for typing major histocompatibility complex (MHC) alleles. The method includes receiving a set of exon-resolution identifiers for an allele pair associated with an MHC gene. An exon-resolution identifier of the set of exon-resolution identifiers for a corresponding allele of the allele pair describes an allele group, a specific allele protein, and exon region information for the corresponding allele. A plurality of reads is received for a sample. For each exon-resolution identifier of the set of exon-resolution identifiers, a set of intron-resolution identifiers is identified to form a plurality of intron-resolution candidate identifiers. An intron-resolution identifier of the set of intron-resolution identifiers for the corresponding allele describes the allele group, the specific allele protein, the exon region information, and intron region information for the corresponding allele.

Abstract: The present invention relates to a dual-station vacuum processor that pumps uniformly, comprising two vacuum processing chambers that may act as a process processing chamber, and an offset-pumping port and a vacuum pump which are common to and communicate with the two vacuum processing chambers, wherein a damper having a set thickness in a vertical direction is provided in a region proximal to the offset-pumping port in each vacuum processing chamber, so as to lower a pumping rate of gas at the pumping port proximal end and balance the pumping rate with the pumping rate of the gas at the pumping port distal end, thereby ameliorating the impact of chamber offset on the uniformity process processing. The present invention may further provide, in a rib as the damper, a channel in communication with the atmospheric environment outside of the chamber, so as to facilitate connection between a cable pipeline in the chamber and the outside.

Abstract: Disclosed are a plasma reactor and a heating apparatus therefor, wherein the heating apparatus comprises: a programmable power supply, a heater assembly, and a bandpass filter assembly, the heater assembly being configured for connecting with the programmable power supply via the bandpass filter assembly, the bandpass filter assembly including a plurality of bandpass filters, wherein the programmable power supply may input, based on match relationships between outputted AC heating powers and conduction frequencies of the bandpass filters BPF, an AC heating power to a matched heater unit to perform heating, thereby achieving zoned temperature control; the disclosures offer a simple circuit structure due to eliminating the need of switch elements, thereby offering a simple control manner.

Abstract: Disclosed is a corrosion-resistant structure for a gas delivery system in a plasma processing apparatus. By providing a plating layer of corrosion-resistant material at the parts including the gas channel to avoid reacting with the delivered corrosive gas, metal and particle contaminations are reduced. By reversely mounting nozzles such that they reliably cover the plating layer inside the gas outlet holes, the disclosure prevents the corrosion-resistant material from being damaged by the plasma generated inside the cavity. By forming a corrosion-resistant yttrium oxide coating at the surfaces of the nozzles exposed to the cavity, the disclosure prevents the plasma from eroding the nozzles. The disclosure further leverages a flexible corrosion-resistant material, such as Teflon, to the sealing surfaces of the liner in contact with the dielectric window and the cavity, which improves the overall sealing effect of the liner.

Abstract: Disclosed are a bottom electrode assembly, a plasma processing apparatus, and a method of replacing a focus ring, wherein the bottom electrode assembly comprises: a base for supporting a wafer to be processed; a focus ring provided surrounding the outer periphery of the base; a cover ring disposed beneath the focus ring, a plurality of recesses being arranged along the circumferential direction of the cover ring; moving blocks provided in the recesses, an inner top corner of each moving block being provided with a step, the step being configured to support part of the focus ring; and a drive device connected to the moving blocks to activate the moving blocks to drive the focus ring to move up and down. With the bottom electrode assembly, replacement of the focus ring can be performed without opening the process chamber.

Abstract: Disclosed are a plasma processing apparatus and an adjusting method of the same. The apparatus includes: a vacuum chamber enclosed by a chamber body and a chamber lid; a movable upper electrode assembly disposed in the vacuum chamber; a bottom electrode assembly, arranged opposite the movable upper electrode assembly, the bottom electrode assembling being detachably connected with the bottom of the chamber body; a plurality of self-alignment devices each including a self-alignment upper structure and a self-alignment lower structure, the self-alignment upper structure and the self-alignment lower structure being connected to the movable upper electrode assembly and the bottom electrode assembly, respectively, wherein when the self-alignment upper structures and the self-alignment bottom structures are aligned to be jointed together, the center of the movable upper electrode assembly is aligned with that of the bottom electrode assembly.

Abstract: Method for multi-zone temperature control system having temperature control matrix and gate driver; N*M temperature control modules form N-row M-column matrix, power supply line, and power return line; each temperature control module comprising: a temperature control unit adapts to be heated up by electrical power for temperature controlling; semiconductor switch provided with a gate electrode connected with the gate driver, two ends of the gate being connected with the power supply line, and the power return line through the temperature control unit, respectively. In the temperature control matrix, one ends, which are connected with a power return line, of the temperature control units of temperature control modules in a same row or same column are serially connected, and connected with the power supply line; one ends, which are connected with the power supply line at same row or same column are serially connected, and connected with the power supply line.

Abstract: Disclosed is an electrostatic chuck, including a base and a disc structure disposed on the base, the upper surface of the disc structure being configured for holding a wafer, wherein a first through-hole is formed in the base, a shunt part is provided in the first through-hole to partition the first through-hole into a plurality of sub-through-holes, and a filled layer is formed between the shunt part and a sidewall of the first through-hole; and a second through-hole is provided in and axially penetrating through the disc structure, the diameter of the first through-hole being greater than the diameter of the second through-hole, the second through-hole communicating with the first through-hole.

Abstract: Disclosed is a corrosion-resistant structure for a gas delivery system in a plasma processing apparatus. By providing a plating layer of corrosion-resistant material at the parts including the gas channel to avoid reacting with the delivered corrosive gas, metal and particle contaminations are reduced. By reversely mounting nozzles such that they reliably cover the plating layer inside the gas outlet holes, the disclosure prevents the corrosion-resistant material from being damaged by the plasma generated inside the cavity. By forming a corrosion-resistant yttrium oxide coating at the surfaces of the nozzles exposed to the cavity, the disclosure prevents the plasma from eroding the nozzles. The disclosure further leverages a flexible corrosion-resistant material, such as Teflon, to the sealing surfaces of the liner in contact with the dielectric window and the cavity, which improves the overall sealing effect of the liner.

Abstract: Disclosed are a plasma reactor and a heating apparatus therefor, wherein the heating apparatus comprises: a programmable power supply, a heater assembly, and a bandpass filter assembly, the heater assembly being configured for connecting with the programmable power supply via the bandpass filter assembly, the bandpass filter assembly including a plurality of bandpass filters, wherein the programmable power supply may input, based on match relationships between outputted AC heating powers and conduction frequencies of the bandpass filters BPF, an AC heating power to a matched heater unit to perform heating, thereby achieving zoned temperature control; the disclosures offer a simple circuit structure due to eliminating the need of switch elements, thereby offering a simple control manner.

Abstract: Disclosed are a temperature control apparatus for semiconductor processing equipment and a corresponding temperature control method, wherein each heating element in each row or each column in a heating element matrix forms a power return circuit with a same power source, respectively, and a same switch module is provided for the power return circuits of all heating elements in each column or each row of the heating element matrix; the input powers to the heating elements in an entire row or column controlled by each power output port of the power source are adjusted by adjusting the output power magnitude of the corresponding power source, and conduction/disconnection of the power return circuits of an entire column or row controlled by each switch module is controlled by controlling ON/OFF of each switch module.

Abstract: The present invention relates to a dual-station vacuum processor that pumps uniformly, comprising two vacuum processing chambers that may act as a process processing chamber, and an offset-pumping port and a vacuum pump which are common to and communicate with the two vacuum processing chambers, wherein a damper having a set thickness in a vertical direction is provided in a region proximal to the offset-pumping port in each vacuum processing chamber, so as to lower a pumping rate of gas at the pumping port proximal end and balance the pumping rate with the pumping rate of the gas at the pumping port distal end, thereby ameliorating the impact of chamber offset on the uniformity process processing. The present invention may further provide, in a rib as the damper, a channel in communication with the atmospheric environment outside of the chamber, so as to facilitate connection between a cable pipeline in the chamber and the outside.

Abstract: The invention relates to an electrode structure for ICP etcher, including: inductive coils, inductive coil connectors, connect rods and sleeve; in which, inductive coils are set on insulation window and insulation window is set on chamber lid; two ends of the connect rods respectively connect inductive coils and inductive coil connectors; the sleeve is made of conductive material and grounded; first end of the sleeve is covered by a cap while the second is opening; the cap has holes, and the connect rods are set pass through the holes and isolated from the cap; the opening of sleeve is set toward inductive coils, and the inductive coils are shielded inside the sleeve. This invention shields electromagnetic field generated by inductive coil connectors outside the sleeve to avoid influence of even electromagnetic field generated to inductive coils, and guarantee even etching.

Abstract: The present invention discloses a multi-zone active-matrix temperature control system, the control system having a temperature control matrix and a gate driver; the temperature control matrix comprising: N*M temperature control modules forming a N-row M-column matrix, a power supply line, and a power return line; each temperature control module comprising: a temperature control unit adapts to be heated up by electrical power for temperature controlling; a semiconductor switch provided with a gate electrode connected with the gate driver, two ends of the gate, which turn on or off, being connected with the power supply line, and with the power return line through the temperature control unit, respectively.

Abstract: An image analysis system is described. The image analysis system includes a computer apparatus programmed to access at least one image and to register a plurality of starting points. The starting points are positionally referenced to an image boundary of a region of interest of the image. The computer apparatus is further programmed to analyze and connect the starting points to form at least one contour line. Through multiple opposing iterations the contour line delineates the image boundary.