Abstract: A 3D semiconductor device including: a first level including a plurality of first metal layers; a second level, where the second level overlays the first level, where the second level includes at least one single crystal silicon layer, where the second level includes a plurality of transistors, where each transistor of the plurality of transistors includes a single crystal channel, where the second level includes a plurality of second metal layers, where the plurality of second metal layers include interconnections between the transistors of the plurality of transistors, and where the second level is overlaid by a first isolation layer; and a connective path between the plurality of transistors and the plurality of first metal layers, where the connective path includes a via disposed through at least the single crystal silicon layer, and where the via includes contact with at least one of the plurality of transistors.

Abstract: A 3D micro display, the 3D micro display including: a first level including a first single crystal layer, the first single crystal layer includes a plurality of LED driving circuits; a second level including a first plurality of light emitting diodes (LEDs), where the second level is disposed on top of the first level, where the second level includes at least ten individual first LED pixels; and a bonding structure, where the second level includes a plurality of bond pads, where the bonding structure includes oxide to oxide bonding.

Abstract: A 3D micro display, the 3D micro display including: a first level including a first single crystal layer, the first single crystal layer includes a plurality of LED driving circuits; a second level including a first plurality of light emitting diodes (LEDs), the first plurality of LEDs including a second single crystal layer; a third level including a second plurality of light emitting diodes (LEDs), the second plurality of LEDs including a third single crystal layer, where the first level is disposed on top of the second level, where the second level includes at least ten individual first LED pixels; and a bonding structure, where the bonding structure includes oxide to oxide bonding.

Abstract: A semiconductor device, the device comprising: a plurality of transistors, wherein at least one of said plurality of transistors comprises a first single crystal source, channel, and drain, wherein at least one of said plurality of transistors comprises a second single crystal source, channel, and drain, wherein said second single crystal source, channel, and drain is disposed above said first single crystal source, channel, and drain, wherein at least one of said plurality of transistors comprises a third single crystal source, channel, and drain, wherein said third single crystal source, channel, and drain is disposed above said second single crystal source, channel, and drain, wherein at least one of said plurality of transistors comprises a fourth single crystal source, channel, and drain, and wherein said third single crystal channel is self-aligned to said fourth single crystal channel being processed following the same lithography step.

Abstract: A method for producing a 3D semiconductor device including: providing a first level including a first single crystal layer; forming a first metal layer on top of first level; forming a second metal layer on top of the first metal layer; forming at least one second level above the second metal layer; performing a first lithography step on the second level; forming a third level on top of the second level; performing a second lithography step on the third level; perform processing steps to form first memory cells within the second level and second memory cells within the third level, where first memory cells include at least one second transistor, and the second memory cells include at least one third transistor; and deposit a gate electrode for the second and the third transistors simultaneously.

Abstract: An integrated device, the device including: a first level including a first mono-crystal layer, the first mono-crystal layer including a plurality of single crystal transistors; an overlying oxide disposed on top of the first level; a second level including a second mono-crystal layer, the second level overlaying the oxide, where the second mono-crystal layer includes a plurality of semiconductor devices; a third level overlaying the second level, where the third level includes a plurality of image sensors, where the first level includes a plurality of landing pads, where the second level is bonded to the first level, where the bonded includes an oxide to oxide bond; and an isolation layer disposed between the second mono-crystal layer and the third level.

Abstract: A 3D semiconductor device, the device comprising: a first level comprising a first single crystal layer, said first level comprising first transistors, wherein each of said first transistors comprises a single crystal channel; first metal layers interconnecting at least said first transistors; a second metal layer overlaying said first metal layers; and a second level comprising a second single crystal layer, said second level comprising second transistors, wherein said second level overlays said first level, wherein at least one of said first transistors controls power delivery for at least one of said second transistor, wherein said second level is directly bonded to said first level, and wherein said bonded comprises direct oxide to oxide bonds.

Abstract: A 3D semiconductor device, the device including: a first level including a first single crystal layer and first single crystal transistors; a first metal layer; a second metal layer disposed atop the first metal layer; second transistors disposed atop of the second metal layer; third transistors disposed atop of the second transistors, where at least one of the third transistors includes at least one replacement gate, being processed to replace a non-metal gate material with a metal based gate, and where a distance from at least one of the third transistors to at least one of the first transistors is less than 2 microns.

Abstract: A multi-level semiconductor device, the device including: a first level including integrated circuits; a second level including a structure designed to conduct electromagnetic waves, where the second level is disposed above the first level, where the integrated circuits include single crystal transistors; and an oxide layer disposed between the first level and the second level, where the integrated circuits include at least one processor, where the second level is bonded to the oxide layer, and where the bonded includes oxide to oxide bonds.

Abstract: A 3D semiconductor device, the device comprising: a first level comprising a first single crystal layer, said first level comprising first transistors, wherein each of said first transistors comprises a single crystal channel; first metal layers interconnecting at least said first transistors; a second metal layer overlaying said first metal layers; and a second level comprising a second single crystal layer, said second level comprising second transistors, wherein said second level overlays said first level, wherein at least one of said second transistors comprises a gate all around structure, wherein said second level is directly bonded to said first level, and wherein said bonded comprises direct oxide to oxide bonds.

Abstract: A 3D semiconductor device with a built-in-test-circuit (BIST), the device comprising: a first single-crystal substrate with a plurality of logic circuits disposed therein, wherein said first single-crystal substrate comprises a device area, wherein said plurality of logic circuits comprise at least a first interconnected array of processor logic, wherein said plurality of logic circuits comprise at least a second interconnected set of circuits comprising a first logic circuit, a second logic circuit, and a third logic circuit, wherein said second interconnected set of logic circuits further comprise switching circuits that support replacing said first logic circuit and/or said second logic circuit with said third logic circuit; and said built-in-test-circuit (BIST), wherein said first logic circuit is testable by said built-in-test-circuit (BIST), and wherein said second logic circuit is testable by said built-in-test-circuit (BIST).

Abstract: A 3D semiconductor device, the device including: a first level including a plurality of first metal layers; a second level, where the second level overlays the first level, where the second level includes at least one single crystal silicon layer, where the second level includes a plurality of transistors, where each transistor of the plurality of transistors includes a single crystal channel, where the second level includes a plurality of second metal layers, where the plurality of second metal layers include interconnections between the transistors of the plurality of transistors, where the second level is overlaid by a first isolation layer; and a connective path between the plurality of transistors and the plurality of first metal layers, where the connective path includes a via disposed through at least the single crystal silicon layer, and where at least one of the plurality of transistors includes a gate all around structure.

Abstract: A 3D semiconductor device including: a first single crystal layer with first transistors; overlaid by a first metal layer; a second metal layer overlaying the first metal layer and being overlaid by a third metal layer; a logic gates including at least the first metal layer interconnecting the first transistors; second transistors disposed atop the third metal layer; third transistors disposed atop the second transistors; a top metal layer disposed atop the third transistors; and a memory array including word-lines, and at least four memory mini arrays, where each of the memory mini arrays includes at least four rows by four columns of memory cells, where each of the memory cells includes at least one of the second transistors or third transistors, sense amplifier circuit(s) for each of the memory mini arrays, the second metal layer provides a greater current carrying capacity than the third metal layer.

Abstract: A 3D semiconductor device, the device including: a first level including a plurality of first metal layers; a second level, where the second level overlays the first level, where the second level includes at least one single crystal silicon layer, where the second level includes a plurality of transistors, where each transistor of the plurality of transistors includes a single crystal channel, where the second level includes a plurality of second metal layers, where the plurality of second metal layers include interconnections between the transistors of the plurality of transistors, where the second level is overlaid by a first isolation layer; and a connective path between the plurality of transistors and the plurality of first metal layers, where the connective path includes a via disposed through at least the single crystal silicon layer, and where at least one of the plurality of transistors includes a gate all around structure.

Abstract: A method for producing a 3D semiconductor device including: providing a first level including a first single crystal layer; forming peripheral circuitry in and/or on the first level, and includes first single crystal transistors; forming a first metal layer on top of the first level; forming a second metal layer on top of the first metal layer; forming second level disposed on top of the second metal layer; performing a first lithography step; forming a third level on top of the second level; performing a second lithography step; processing steps to form first memory cells within the second level and second memory cells within the third level, where the plurality of first memory cells include at least one second transistor, and the plurality of second memory cells include at least one third transistor; and deposit a gate electrode for second and third transistors simultaneously.

Abstract: An integrated device, the device including: a first level including a first mono-crystal layer, the first mono-crystal layer including a plurality of single crystal transistors; an overlying oxide disposed on top of the first level; a second level including a second mono-crystal layer, the second level overlaying the oxide, where the second mono-crystal layer includes a plurality of semiconductor devices; a third level overlaying the second level, where the third level includes a plurality of image sensors, where the first level includes a plurality of landing pads, where the second level is bonded to the first level, where the bonded includes an oxide to oxide bond; and an isolation layer disposed between the second mono-crystal layer and the third level.

Abstract: A method for producing a 3D semiconductor device including: providing a first level, the first level including a first single crystal layer; forming first alignment marks and control circuits in and/or on the first level, where the control circuits include first single crystal transistors and at least two interconnection metal layers; forming at least one second level disposed above the control circuits; performing a first etch step into the second level; forming at least one third level disposed on top of the second level; performing additional processing steps to form first memory cells within the second level and second memory cells within the third level, where each of the first memory cells include at least one second transistor, where each of the second memory cells include at least one third transistor, performing bonding of the first level to the second level, where the bonding includes oxide to oxide bonding.

Abstract: A multi-level semiconductor device, the device including: a first level including integrated circuits; a second level including a structure designed to conduct electromagnetic waves, where the second level is disposed above the first level, where the integrated circuits include single crystal transistors; and an oxide layer disposed between the first level and the second level, where the second level is bonded to the oxide layer, and where the bonded includes oxide to oxide bonds.

Abstract: A 3D semiconductor device including: a first level including a single crystal silicon layer and a plurality of first transistors, the plurality of first transistors each including a single crystal channel; a first metal layer overlaying the plurality of first transistors; a second metal layer overlaying the first metal layer; a third metal layer overlaying the second metal layer; a second level is disposed above the third metal layer, where the second level includes a plurality of second transistors; a fourth metal layer disposed above the second level; and a connective path between the fourth metal layer and either the third metal layer or the second metal layer, where the connective path includes a via disposed through the second level, where the via has a diameter of less than 800 nm and greater than 5 nm, and where at least one of the plurality of second transistors includes a metal gate.

Abstract: A method for producing a 3D semiconductor device including: providing a first level, the first level including a first single crystal layer; forming first alignment marks and control circuits in and/or on the first level, where the control circuits include first single crystal transistors and at least two interconnection metal layers; forming at least one second level disposed above the control circuits; performing a first etch step into the second level; forming at least one third level disposed on top of the second level; performing additional processing steps to form first memory cells within the second level and second memory cells within the third level, where each of the first memory cells include at least one second transistor, where each of the second memory cells include at least one third transistor, performing bonding of the first level to the second level, where the bonding includes oxide to oxide bonding.