Abstract: A method includes processing a first substrate in a process chamber of a substrate processing system according to a recipe while the first substrate is supported by a substrate support of the process chamber. The first substrate includes a first surface profile after the processing. The method further includes generating a first profile map of the first surface profile of the first substrate using a substrate measurement system of the substrate processing system. The method further includes processing data from the first profile map using a model. The model outputs a first estimated substrate placement value for a placement of the first substrate relative to one or more components of the substrate support. The method further includes determining a recommended placement for substrates on the substrate support based on the first estimated substrate placement value.

Abstract: A computer readable medium includes instructions that, when executed by a processing device, cause the processing device to perform operations. Operations include processing a first substrate in a process chamber while the first substrate is supported by a substrate support at a first placement location. The first substrate includes a first surface profile after processing. Operations further include generating a first surface profile map of the first surface profile using a substrate measurement system. Operations further include determining a plurality of etch rates corresponding to a plurality of locations on the first substrate. Operations further include processing data associated with the plurality of etch rates using a model that is to output one or more estimated surface profiles associated with one or more estimated placement locations. Operations further include determining a recommended placement for substrates on the substrate support based on the one or more estimated placement locations.