Abstract: A beam shaping method and device employing full-image transfer for planar light sources. The method comprises: using multiple first lenses to respectively magnify and image beams emitted by multiple planar light sources, so as to obtain magnified full images of the multiple planar light sources; and seamlessly stitching together the magnified full images of the multiple planar light sources at a primary imaging position, so as to obtain a seamless light source at the primary imaging position. The beam shaping method for the planar light sources achieves the elimination of gaps between the light sources with almost no loss of optical power by means of full-image transfer and seamless stitching, thereby improving the beam quality of the light sources as a whole. This kind of optical shaping method is suitable for shaping and processing planar light sources such as VCSEL and LED.

Abstract: The present disclosure provides a multi-queue multi-cluster task scheduling method and system. The method includes: constructing a training data set; training and optimizing a plurality of parallel deep neural networks (DNN) by using the training data set to obtain a plurality of trained and optimized parallel DNNs; setting a reward function, where the reward function minimizes the sum of a task delay and energy consumption by adjusting a reward value proportion of the task delay and a reward value proportion of the energy consumption; inputting a to-be-scheduled state space into the plurality of trained and optimized parallel DNNs to obtain a plurality of to-be-scheduled action decisions; determining an optimal action decision among the plurality of to-be-scheduled action decisions based on the reward function for output; and scheduling the plurality of task attribute groups to a plurality of clusters based on the optimal action decision.

Abstract: An apparatus may include a first clock generator configured to receive an input clock signal, and generate two or more first-level clock signals of a track-and-hold circuit, a phase interpolator configured to generate an interpolated clock signals, wherein the interpolated clock signal is based on the two or more first-level clock signals, and a second clock generator configured to generate two or more second-level clock signals based on the interpolated clock signal, wherein the phase of the two or more second-level clock signals relative to the phase of a respective first-level clock signal is determined, at least in part, by the phase of the interpolated clock signal.

Abstract: A black silicon carbide ceramic based thermoelectric photodetector, and a thermoelectric optical power meter/thermoelectric optical energy meter using same. The black silicon carbide ceramic based thermoelectric photodetector comprises a thermal conduction plate (21) made of a black silicon carbide ceramic, wherein the surface of one side of the thermal conduction plate (21) is an optical absorption surface (211); and a thermopile (22) or a series connection conductive metal layer (302) is arranged on the surface of either side of the thermal conduction plate (21) to constitute the thermoelectric photodetector. In the thermoelectric photodetector, the black silicon carbide ceramic is used as both the thermal conduction plate (21) and a light absorber, and is directly combined with the thermopile (22) or the series connection conductive metal layer (302) to constitute the thermoelectric photodetector, thereby simplifying the structure of the thermoelectric photodetector.

Abstract: A beam shaping method and device employing full-image transfer for planar light sources. The method comprises: using multiple first lenses to respectively magnify and image beams emitted by multiple planar light sources, so as to obtain magnified full images of the multiple planar light sources; and seamlessly stitching together the magnified full images of the multiple planar light sources at a primary imaging position, so as to obtain a seamless light source at the primary imaging position. The beam shaping method for the planar light sources achieves the elimination of gaps between the light sources with almost no loss of optical power by means of full-image transfer and seamless stitching, thereby improving the beam quality of the light sources as a whole. This kind of optical shaping method is suitable for shaping and processing planar light sources such as VCSEL and LED.

Abstract: A triboluminescence isotope battery can include a housing defining a chamber, and one or more energy conversion devices. Each energy conversion device can include a holder, a cantilever beam, a triboluminescence component, a first photoelectric conversion component, a radioactive source, a first charge collecting component, a second charge collecting, a first thermoelectric conversion component, and a heat dissipation component.

Abstract: Disclosed is a high power VCSEL laser treatment device with a skin cooling function, comprising VCSEL array packaged on a laser heat sink, an optical transmission device arranged in front of light-exiting faces of the VCSEL array and a high-heat conductivity optical window sheet adhered to the light-exiting port end of the optical transmission device. An integrally molded cooling conduction metal piece is arranged on the outer sides of the laser heat sink, the optical transmission device, and the high-heat-conductivity optical window sheet. In addition, one or more semiconductor chilling plates are arranged between the cooling conduction metal piece and the laser heat sink. In the above-mentioned high power VCSEL semiconductor laser treatment device, the semiconductor chilling plates and the VCSEL array share the heat sink, so that the inner structure is simplified.

Abstract: A triboluminescence isotope battery can include a housing defining a chamber, and one or more energy conversion devices. Each energy conversion device can include a holder, a cantilever beam, a triboluminescence component, a first photoelectric conversion component, a radioactive source, a first charge collecting component, a second charge collecting, a first thermoelectric conversion component, and a heat dissipation component.

Abstract: Provided is a high-power semiconductor laser based on VCSEL, comprising a VCSEL laser module. The VCSEL laser module includes a VCSEL chip array (1) consisting of a plurality of VCSEL chips (10) and an inner wall reflection optical transmission device (2) which is arranged in front of a light emergent face of the VCSEL chip array (1); and the light emergent face of the VCSEL chip array (1) is used for secondarily reflecting the reflected light reflected by a target object (3) and the inner wall reflection optical transmission device (2). Also provided is a packaging structure for the high-power semiconductor laser. The VCSEL chip array (1) is packaged by an inwardly concave arc-shaped heat sink (4), so that the purpose of converging the laser light beam near a centre position can be achieved.

Abstract: Disclosed is a high power VCSEL laser treatment device with a skin cooling function, comprising VCSEL array (4) packaged on a laser heat sink (2), an optical transmission device (8) arranged in front of light-exiting faces of the VCSEL array (4) and a high-heat-conductivity optical window sheet (6) adhered to the light-exiting port end of the optical transmission device (8). An integrally molded cooling conduction metal piece (1) is arranged on the outer sides of the laser heat sink (2), the optical transmission device (8) and the high-heat-conductivity optical window sheet (6). In addition, one or more semiconductor chilling plates (7) are arranged between the cooling conduction metal piece (1) and the laser heat sink (2). In the above-mentioned high power VCSEL semiconductor laser treatment device, the semiconductor chilling plates (7) and the VCSEL array (4) share the heat sink, so that the inner structure is simplified.

Abstract: Provided is a high-power semiconductor laser based on VCSEL, comprising a VCSEL laser module. The VCSEL laser module includes a VCSEL chip array (1) consisting of a plurality of VCSEL chips (10) and an inner wall reflection optical transmission device (2) which is arranged in front of a light emergent face of the VCSEL chip array (1); and the light emergent face of the VCSEL chip array (1) is used for secondarily reflecting the reflected light reflected by a target object (3) and the inner wall reflection optical transmission device (2). Also provided is a packaging structure for the high-power semiconductor laser. The VCSEL chip array (1) is packaged by an inwardly concave arc-shaped heat sink (4), so that the purpose of converging the laser light beam near a centre position can be achieved.