Abstract: A capacitive device including a metallic layer; a network of nanotube or nanowire bundles that extend from a face of the metallic layer; a capacitive stack covering the metallic layer and the nanotube bundles in a conforming manner, the stack including an upper conducting layer and an insulating layer, the device including a capacitive zone and a lower contact zone, the capacitive zone being a zone wherein the upper conducting layer encapsulates the nanotube bundles and the insulating layer, while the lower contact zone is a zone wherein the capacitive stack leaves the free ends exposed, and the insulating layer encapsulates the upper conducting layer.

Abstract: A method for manufacturing a capacitive device comprising the following steps: i) provide a substrate comprising: a first area made of a first material and/or having a first texture, a second area made of a second material and/or having a second texture, a third area made of a third material and/or having a third texture, ii) make nanopillars grow over the substrate with which a nanopillar layer is obtained locally having different densities, the density of the first area being lower than the density of the third area, iii) deposit an insulating layer, iv) deposit a conductive layer, with which a capacitive stack is formed at the first area, the capacitive stack comprising the insulating layer and the conductive layer.

Abstract: A method for manufacturing a capacitive device comprising the following steps: a) providing a metallic layer, b) depositing a full-sheet aluminium layer, c) structuring pores in the aluminium layer by a full-sheet anodic etching process, subsequently to which a continuous porous alumina layer is obtained comprising a first main face and a second main face, longitudinal pores extending from the first main face to the second main face, d) forming a capacitive area at a first area of the porous alumina layer, e) forming an upper electrode over the capacitive area, f) forming a contact resumption at a second area of the porous alumina layer, g) forming a lower electrode over the contact resumption.

Abstract: A capacitive device including a metallic layer; a network of nanotube or nanowire bundles that extend from a face of the metallic layer; a capacitive stack covering the metallic layer and the nanotube bundles in a conforming manner, the stack including an upper conducting layer and an insulating layer, the device including a capacitive zone and a lower contact zone, the capacitive zone being a zone wherein the upper conducting layer encapsulates the nanotube bundles and the insulating layer, while the lower contact zone is a zone wherein the capacitive stack leaves the free ends exposed, and the insulating layer encapsulates the upper conducting layer.