Abstract: A waveguide including a substrate, an assembly of semiconductor regions consecutively extending on the substrate along a direction corresponding to a propagation direction of an electromagnetic wave having a wavelength noted ?, the semiconductor regions being electrically alternately doped with a first conductivity type and with a second conductivity type along the propagation direction, a dielectric layer interposed between two consecutive semiconductor regions, at least one pair of consecutive elementary structures having a dimensions along the propagation direction adapted to ? to form a grating where the light propagates with no diffraction effects.

Abstract: A waveguide including a substrate, an assembly of semiconductor regions consecutively extending on the substrate along a direction corresponding to a propagation direction of an electromagnetic wave having a wavelength noted ?, the semiconductor regions being electrically alternately doped with a first conductivity type and with a second conductivity type along the propagation direction, a dielectric layer interposed between two consecutive semiconductor regions, at least one pair of consecutive elementary structures having a dimensions along the propagation direction adapted to ?, to form, a grating where the light propagates with, no diffraction effects,

Abstract: A component, device and improved electro-optical modulation system for increasing compactness, favoring the adaptation of optical and electrical waves, and a method of fabrication. Such a component exhibits a waveguide architecture devised so that the length of the path followed by the luminous flux exhibits, with the length of the path traversed by the electrical control signal, a determined difference for decreasing or compensating for the difference in the speeds of propagation of the luminous flux and of the electrical signal. In particular, the modulation zone includes a path of the luminous flux winding around itself and successively crossing at least two indentations emanating from at least two of these control elements. It thus exhibits a length greater than that traversed by the electrical signal, for example between a first and a second region of interaction between this control signal and this luminous flux.

Abstract: In a process for fabrication of an optical slot waveguide on silicon, a thin single-crystal silicon film is deposited on a substrate covered with an insulating buried layer; a local thermal oxidation is carried out over the entire depth of the thin single-crystal silicon film in order to form an insulating oxidized strip extending along the desired path of the waveguide; an insulating or semi-insulating layer is deposited on the silicon film; two openings having vertical sidewalls are excavated over the entire thickness of this insulating or semi-insulating layer, said openings being separated by a narrow gap constituting an insulating or semi-insulating vertical wall that will be the material of the slot; single-crystal silicon is grown in the openings and right to the edges of the insulating or semi-insulating wall; and then the upper part of the silicon is etched in order to complete the geometry of the waveguide.

Abstract: A component, device and improved electro-optical modulation system for increasing compactness, favouring the adaptation of optical and electrical waves, and a method of fabrication. Such a component exhibits a waveguide architecture devised so that the length of the path followed by the luminous flux exhibits, with the length of the path traversed by the electrical control signal, a determined difference for decreasing or compensating for the difference in the speeds of propagation of the luminous flux and of the electrical signal. In particular, the modulation zone includes a path of the luminous flux winding around itself and successively crossing at least two indentations emanating from at least two of these control elements. It thus exhibits a length greater than that traversed by the electrical signal, for example between a first and a second region of interaction between this control signal and this luminous flux.

Abstract: In a process for fabrication of an optical slot waveguide on silicon, a thin single-crystal silicon film is deposited on a substrate covered with an insulating buried layer; a local thermal oxidation is carried out over the entire depth of the thin single-crystal silicon film in order to form an insulating oxidized strip extending along the desired path of the waveguide; an insulating or semi-insulating layer is deposited on the silicon film; two openings having vertical sidewalls are excavated over the entire thickness of this insulating or semi-insulating layer, said openings being separated by a narrow gap constituting an insulating or semi-insulating vertical wall that will be the material of the slot; single-crystal silicon is grown in the openings and right to the edges of the insulating or semi-insulating wall; and then the upper part of the silicon is etched in order to complete the geometry of the waveguide.

Abstract: An optoelectronic controller for regulating an optical signal. The controller includes a ridge or rib waveguide in an SOI-type substrate. The controller also includes an active zone formed by a plurality of thin layers of silicon. The layers are either N+ type doped or P+ type doped. The zone is defined between an N+ doped zone and a P+ doped zone which together form a PIN diode. The optoelectronic controller is all-silicon and operates by carrier desertion.

Abstract: An optoelectronic controller for regulating an optical signal. The controller includes a ridge or rib waveguide in an SOI-type substrate. The controller also includes an active zone formed by a plurality of thin layers of silicon. The layers are either N+ type doped or P+ type doped. The zone is defined between an N+ doped zone and a P+ doped zone which together form a PIN diode. The optoelectronic controller is all-silicon and operates by means of carrier desertion.