Abstract: Provided are sleep quality assessment methods, apparatuses, electronic devices, and storage medium, and relates to the field of artificial intelligence and deep learning technologies, and in particular to sleep quality assessment methods, apparatuses, electronic devices, and storage medium. The method includes: determining sleep data of a subject; obtaining sleep feature data based on a reference core sleep period of the subject and the sleep data; and evaluating sleep quality of the subject based on the sleep feature data. The method assesses the sleep quality of the subject based on the sleep feature data extracted based on the reference core sleep period of the subject and the sleep data of the subject, takes into account individual factors of the subject in extracting the sleep feature data, thus providing a more accurate assessment of the sleep quality of the subject.

Abstract: The present invention provides a novel organic compound of General Formula 1, a material comprising the same for organic electroluminescence devices, and an organic electroluminescence device comprising the material. The organic compound of the present invention is useful in organic electroluminescence devices as a hole injection layer substance, a hole transport layer substance, an electron blocking layer substance, and an emission layer substance such as green and red phosphorescent host substance, and when used in the organic electroluminescence devices, can reduce the drive voltage, and increase the luminous efficiency, luminance, thermal stability, color purity and service life of the devices.

Abstract: The present invention provides a novel organic compound, a material comprising the same for organic electroluminescence devices, and an organic electroluminescence device comprising the material. The organic compound provided in the present invention is useful in organic electroluminescence devices as a hole injection layer material, a hole transport layer material, an electron blocking layer material, and an emission layer material such as green and red phosphorescent host material, and can reduce the drive voltage, and increase the luminous efficiency, luminance, thermal stability, color purity and service life of the devices.

Abstract: The present invention provides a spiro compound of General Formula 1, and use thereof in the fields of electronic materials, fine chemistry, and medical science. Further, the present invention also provides an organic electroluminescence device fabricated by using the spiro compound of General Formula 1. When used in an organic electroluminescence device, the compound of General Formula 1 provided in the present invention is capable of reducing the drive voltage, and increasing the luminous efficiency, brightness, thermal stability, color purity, and service life of the device.

Abstract: A low dynamic resistance, low capacitance diode of a semiconductor device includes a heavily-doped n-type substrate. A lightly-doped n-type layer 1 micron to 5 microns thick is disposed on the n-type substrate. A lightly-doped p-type layer 3 microns to 8 microns thick is disposed on the n-type layer. The low dynamic resistance, low capacitance diode, of the semiconductor device includes a p-type buried layer, with a peak dopant density above 1×1017 cm?3, extending from the p-type layer through the n-type layer to the n-type substrate. The low dynamic resistance, low capacitance diode also includes an n-type region disposed in the p-type layer, extending to a top surface of the p-type layer.

Abstract: A system includes a voltage surge protection circuit that receives a source voltage from a source. The voltage surge protection circuit includes a reference circuit to generate a reference voltage based on the source voltage when the source voltage exceeds a clamping voltage and a feedback control circuit to receive the reference voltage and clamp an output voltage to the clamping voltage when the voltage from the source exceeds the clamping voltage. A dynamic resistance of the feedback control circuit is substantially zero.

Abstract: A contact array optimization scheme for ESD devices. In one embodiment, contact apertures patterned through a pre-metal dielectric layer over active areas may be selectively modified in size, shape, placement and the like, to increase ESD protection performance, e.g., such as maximizing the transient current density, etc., in a standard ESD rating test.

Abstract: A contact array optimization scheme for ESD devices. In one embodiment, contact apertures patterned through a pre-metal dielectric layer over active areas may be selectively modified in size, shape, placement and the like, to increase ESD protection performance, e.g., such as maximizing the transient current density, etc., in a standard ESD rating test.

Abstract: A low dynamic resistance, low capacitance diode of a semiconductor device includes a heavily-doped n-type substrate. A lightly-doped n-type layer 1 micron to 5 microns thick is disposed on the n-type substrate. A lightly-doped p-type layer 3 microns to 8 microns thick is disposed on the n-type layer. The low dynamic resistance, low capacitance diode, of the semiconductor device includes a p-type buried layer, with a peak dopant density above 1×1017 cm?3, extending from the p-type layer through the n-type layer to the n-type substrate. The low dynamic resistance, low capacitance diode also includes an n-type region disposed in the p-type layer, extending to a top surface of the p-type layer.

Abstract: A low dynamic resistance, low capacitance diode of a semiconductor device includes a heavily-doped n-type substrate. A lightly-doped n-type layer 1 micron to 5 microns thick is disposed on the n-type substrate. A lightly-doped p-type layer 3 microns to 8 microns thick is disposed on the n-type layer. The low dynamic resistance, low capacitance diode, of the semiconductor device includes a p-type buried layer, with a peak dopant density above 1×1017 cm?3, extending from the p-type layer through the n-type layer to the n-type substrate. The low dynamic resistance, low capacitance diode also includes an n-type region disposed in the p-type layer, extending to a top surface of the p-type layer.

Abstract: A low dynamic resistance, low capacitance diode of a semiconductor device includes a heavily-doped n-type substrate. A lightly-doped n-type layer 1 micron to 5 microns thick is disposed on the n-type substrate. A lightly-doped p-type layer 3 microns to 8 microns thick is disposed on the n-type layer. The low dynamic resistance, low capacitance diode, of the semiconductor device includes a p-type buried layer, with a peak dopant density above 1×1017 cm?3, extending from the p-type layer through the n-type layer to the n-type substrate. The low dynamic resistance, low capacitance diode also includes an n-type region disposed in the p-type layer, extending to a top surface of the p-type layer.

Abstract: The present invention provides a novel organic compound of General Formula 1, a material comprising the same for organic electroluminescence devices, and an organic electroluminescence device comprising the material. The organic compound of the present invention is useful in organic electroluminescence devices as a hole injection layer substance, a hole transport layer substance, an electron blocking layer substance, and an emission layer substance such as green and red phosphorescent host substance, and when used in the organic electroluminescence devices, can reduce the drive voltage, and increase the luminous efficiency, luminance, thermal stability, color purity and service life of the devices.

Abstract: The present invention provides a novel organic compound, a material comprising the same for organic electroluminescence devices, and an organic electroluminescence device comprising the material. The organic compound provided in the present invention is useful in organic electroluminescence devices as a hole injection layer material, a hole transport layer material, an electron blocking layer material, and an emission layer material such as green and red phosphorescent host material, and can reduce the drive voltage, and increase the luminous efficiency, luminance, thermal stability, color purity and service life of the devices.

Abstract: The present invention provides a spiro compound of General Formula 1, and use thereof in the fields of electronic materials, fine chemistry, and medical science. Further, the present invention also provides an organic electroluminescence device fabricated by using the spiro compound of General Formula 1. When used in an organic electroluminescence device, the compound of General Formula 1 provided in the present invention is capable of reducing the drive voltage, and increasing the luminous efficiency, brightness, thermal stability, color purity, and service life of the device.

Abstract: A semiconductor device includes a Zener diode having an anode layer and a cathode layer. The Zener diode provides an electrostatic discharge (ESD) path for ESD signals. At least two channel diodes are coupled to the ESD path of the Zener diode. Each of the channel diodes includes a common cathode layer and a separate anode region. The common cathode layer of the channel diodes is disposed on the cathode layer of the Zener diode. At least two channels are provided where each channel is coupled to one of the separate anode regions to provide an electrical connection for protected signal paths to the ESD path.

Abstract: A system includes a voltage surge protection circuit that receives a source voltage from a source. The voltage surge protection circuit includes a reference circuit to generate a reference voltage based on the source voltage when the source voltage exceeds a clamping voltage and a feedback control circuit to receive the reference voltage and clamp an output voltage to the clamping voltage when the voltage from the source exceeds the clamping voltage. A dynamic resistance of the feedback control circuit is substantially zero.

Abstract: An apparatus comprises a first PFET including a first intrinsic body diode; an electrostatic discharge (ESD) subcircuit coupled to a source of the first PFET; a reverse bias voltage element, such as a zener diode, an anode of which is coupled to a gate of the first PFET; a second PFET having a source coupled to a cathode of the zener diode a capacitor coupled to a gate the second PFET; and a first resistor coupled to the gate of the second PFET. The apparatus can protect against both positive and negative electro static transient discharge events.

Abstract: An apparatus comprises a first PFET including a first intrinsic body diode; an electrostatic discharge (ESD) subcircuit coupled to a source of the first PFET; a reverse bias voltage element, such as a zener diode, an anode of which is coupled to a gate of the first PFET; a second PFET having a source coupled to a cathode of the zener diode a capacitor coupled to a gate the second PFET; and a first resistor coupled to the gate of the second PFET. The apparatus can protect against both positive and negative electro static transient discharge events.

Abstract: Electrostatic discharge (ESD) protection circuits for self-protecting cascode stages are disclosed. In one example, an ESD protection circuit is described. A cascode stage is configured to selectively couple an output pad to a reference terminal. An ESD sensor may detect a change in voltage indicative of an ESD event occurring at the output pad, causing a gate drive to turn on the cascode stage to conduct ESD current in response to detection of the ESD event at the output pad. A leakage blocker is also included to prevent leakage current from the cascode stage to the gate drive while there is not an ESD event.

Abstract: Various apparatuses, methods and systems for protecting a driver from electrostatic discharge are disclosed herein. For example, some exemplary embodiments provide a driver, including a buffer, a leakage path blocking transistor connected to an output of the buffer, and an output driver connected to an output of the leakage path blocking transistor. Current from the output driver to the buffer is substantially blocked by the leakage path blocking transistor.