Abstract: The present technology generally relates to methods for metallizing an aluminum paste comprising contacting the aluminum paste with a cleaner, contacting the aluminum paste with an oxidation inhibiting deposit solution to deposit a layer of an oxidation inhibiting composition onto the aluminum paste and contacting the aluminum paste with conductive metal deposit solution to deposit a layer of a conductive metal onto the aluminum paste. Specifically, the present technology includes methods metallizing an aluminum paste comprising contacting the aluminum paste with an acidic cleaner, contacting the aluminum paste with an acid zincate solution to deposit zinc onto the aluminum paste and contacting the aluminum paste with an electroless nickel deposit solution to coat the aluminum paste with a nickel-phosphorus layer.

Abstract: The present technology generally relates to methods for metallizing an aluminum paste comprising contacting the aluminum paste with a cleaner, contacting the aluminum paste with an oxidation inhibiting deposit solution to deposit a layer of an oxidation inhibiting composition onto the aluminum paste and contacting the aluminum paste with conductive metal deposit solution to deposit a layer of a conductive metal onto the aluminum paste. Specifically, the present technology includes methods metallizing an aluminum paste comprising contacting the aluminum paste with an acidic cleaner, contacting the aluminum paste with an acid zincate solution to deposit zinc onto the aluminum paste and contacting the aluminum paste with an electroless nickel deposit solution to coat the aluminum paste with a nickel-phosphorus layer.

Abstract: Disclosed are methods for repairing seed layers prior to subsequent metallization during the manufacture of electronic devices. Also disclosed are electronic devices containing substantially continuous seed layers.

Abstract: Disclosed are electrolytes for copper electroplating that provide enhanced fill of small features with less overplate. Also disclosed are methods of plating substrates, such as electronic devices, using such electrolytes.

Abstract: Disclosed are methods for repairing seed layers prior to subsequent metallization during the manufacture of electronic devices.

Abstract: Disclosed are methods for repairing or enhancing discontinuous metal seed layers prior to subsequent metallization during the manufacture of electronic devices. Such repair methods do not require the use of a second electroplating bath.

Abstract: Disclosed is a method of electroplating substrate such that small recessed features are completely filled with minimum thickness of the deposited metal over fields.

Abstract: Disclosed are compositions and methods for providing a planarized metal layer on a substrate having small apertures. The compositions and methods of the present invention provide complete fill of small apertures with reduced void formation.

Abstract: Disclosed are methods of repairing metal seed layers prior to subsequent metallization. Such repair methods provide metal seed layers disposed on a substrate that are substantially free of metal oxide and substantially free of discontinuities.

Abstract: Disclosed are methods for analyzing additive breakdown products in electroplating baths as well as methods of controlling the presence of such breakdown products in electroplating baths.

Abstract: Disclosed is a process flows for treating seed layers including copper such that various problems such as oxidation and insufficient coverage can be repaired in an effective and efficient manner.

Abstract: Disclosed are methods for repairing seed layers prior to subsequent metallization during the manufacture of electronic devices.

Abstract: Disclosed are electroplating baths for enhancing copper seed layers and for subsequent metallization on the seed layers. Methods of enhancing copper seed layers and depositing metal on such seed layers are also disclosed.

Abstract: Disclosed are methods for repairing or enhancing discontinuous metal seed layers prior to subsequent metallization during the manufacture of electronic devices. Such repair methods do not require the use of a second electroplating bath.

Abstract: Disclosed is a method for repairing of seed layers by removal of oxidized metal from the seed layers prior to subsequent metallization. Also disclosed is a method for monitoring such repair to provide substantially metal oxide free seed layers.

Abstract: Disclosed are methods for repairing seed layers prior to subsequent metallization during the manufacture of electronic devices. Also disclosed are electronic devices containing substantially continuous seed layers.

Abstract: Disclosed are electrolytes for copper electroplating that provide enhanced fill of small features with less overplate. Also disclosed are methods of plating substrates, such as electronic devices, using such electrolytes.

Abstract: Disclosed are methods of repairing metal seed layers prior to subsequent metallization. Such repair methods provide metal seed layers disposed on a substrate that are substantially free of metal oxide and substantially free of discontinuities.