Abstract: Methods and systems for an emissive fiber capable of being used for making emissive fabric by providing an optical fiber having a core and and embedding up conversion particles into at least one of the cladding and core to produce an emissive fiber that emits visible light when excited by light from near infrared light source that excites the up conversion particles. The optical fiber can have a core index of refraction that is greater than or less than the refractive index of the cladding for near infrared light or an index difference between the core and cladding of zero. Plural optical fibers are intertwined to produce an emissive fabric, wherein coupling a light source with the emissive fibers transmits a light beam through the fiber to excite the up conversion particles to emit visible light. The up conversion material can be embedded into the core, the cladding, or both.

Abstract: Methods, apparatus and systems for an up-converter resonant cavity light emitting diode device includes a semiconductor light source, an up-converter to form the light emitter with up-converting materials and an electrical source coupled with the semiconductor light source for providing electrical energy to the semiconductor light source to provide a desired wavelength emitted light. The semiconductor light source is a resonant cavity light emitting diode or laser that emits an approximately 975 mm wavelength to provide electrical and optical confinement to the semiconductor light source to form a resonant cavity up-converting light emitting diode (UC/RCLED). Rows and columns of electrodes provide active matrix addressing of plural sets of UC/RCLEDs for display devices.

Abstract: Methods, apparatus and systems for an up-converter resonant cavity light emitting diode device includes a semiconductor light source, an up-converter to form the light emitter with up-converting materials and an electrical source coupled with the semiconductor light source for providing electrical energy to the semiconductor light source to provide a desired wavelength emitted light. The semiconductor light source is a resonant cavity light emitting diode or laser that emits an approximately 975 nm wavelength to provide electrical and optical confinement to the semiconductor light source to form an up-converting resonant cavity light emitting diode (UC/RCLED). Rows and columns of electrodes provide active matrix addressing of plural sets of UC/RCLEDs for display devices.

Abstract: Methods, apparatus and systems for an up-converter resonant cavity light emitting diode device includes a semiconductor light source, an up-converter to form the light emitter with up-converting materials and an electrical source coupled with the semiconductor light source for providing electrical energy to the semiconductor light source to provide a desired wavelength emitted light. The semiconductor light source is a resonant cavity light emitting diode or laser that emits an approximately 975 nm wavelength to provide electrical and optical confinement to the semiconductor light source to form a resonant cavity up-converting light emitting diode (UC/RCLED). Rows and columns of electrodes provide active matrix addressing of plural sets of UC/RCLEDs for display devices.

Abstract: A light emitting device includes a substrate, at least one semiconductor light emitting device formed in or on the substrate, and upconverting material disposed in or on the substrate. The upconverting material is disposed in a path of light processed or emitted by the semiconductor device. The upconverting material absorbs light emitted by the semiconductor device and emits upconverted light in response. Integrated pixelated displays include a plurality of pixels formed on a surface of the substrate, with each pixel including up-conversion material based red light source, a blue light source a green light source, and a structure for selectively controlling emission from the red, blue and green lights sources for each of the pixels.

Abstract: A light emitting device includes a substrate, at least one semiconductor light emitting device formed in or on the substrate, and upconverting material disposed in or on the substrate. The upconverting material is disposed in a path of light processed or emitted by the semiconductor device. The upconverting material absorbs light emitted by the semiconductor device and emits upconverted light in response. Integrated pixelated displays include a plurality of pixels formed on a surface of the substrate, with each pixel including up-conversion material based red light source, a blue light source a green light source, and a structure for selectively controlling emission from the red, blue and green lights sources for each of the pixels.

Abstract: Solid-state optoelectronic and electronic devices that use semiconductor quantum dots for manipulation of photonic or electronic properties include a semiconductor active region forming a quantum dot heterostructure having a plurality of quantum dot layers each having discrete quantum hole states and a p-type impurity layer formed proximate to at least one of the quantum dot layers to provide excess equilibrium hole charge to occupy at least some of the discrete quantum hole states to improve To and other performance characteristics of quantum dot devices.

Abstract: Solid-state optoelectronic and electronic devices that use semiconductor quantum dots for manipulation of photonic or electronic properties include a semiconductor active region forming a quantum dot heterostructure having a plurality of quantum dot layers each having discrete quantum hole states and a p-type impurity layer formed proximate to at least one of the quantum dot layers to provide excess equilibrium hole charge to occupy at least some of the discrete quantum hole states to improve To and other performance characteristics of quantum dot devices.

Abstract: Disclosed is a low threshold vertical cavity surface emitter having a low refraction index confining layer directly in the cavity spacer. This allows a ½ wavelength cavity spacer and a lateral size of as low as 2 &mgr;m. Also disclosed is a method of rapid temperature annealing to seal a III-V crystal and inhibit oxidative degradation.

Abstract: Disclosed is a low threshold vertical cavity surface emitter having a low refraction index confining layer (36) directly in the cavity spacer. This allows a ½ wavelength cavity spacer and lateral size of as low as 2 &mgr;m. Also disclosed is a method of rapid temperature annealing to seal a III-V crystal and inhibit oxidative degradation.

Abstract: An improved aperture is provided. The aperture comprises: at least a first layer; the first layer being oxidized in a laterally oriented first region; the first layer being modified within a laterally oriented second region, the second region being oxidized less than the first region; a second layer disposed above the first layer, the second layer being oxidized less than the first layer and providing material to modify the laterally oriented second region and thereby define an aperture. Additionally, a method for producing the aperture is disclosed.

Abstract: This invention embodies a Vertical Cavity Surface Emitting Laser with a top mirror comprising at least one pair of quarterwave layers, each pair consisting of a low index of refraction layer and a high index of refraction layer, the high index of refraction layer being a semiconductor chosen from GaP and ZnS and the low index of refraction layer being chosen from borosilicate glass (BSG) CaF.sub.2,MgF.sub.2 and NaF. Especially useful in vertical cavity surface emitting lasers are mirrors formed by a stack of a plurality of pairs of GaP/BSG or ZnS/CdF.sub.2. Such mirrors have a high reflectivity characteristics required for an efficient operation of the laser. The GaP/BSG or ZnS/CaF.sub.2 mirror structure represents a considerable improvement over previous designs for VCSELs in terms of ultimate reflectivity, low loss, and post growth processing compatibility.

Abstract: In the present invention, spontaneous photon emission intensity in a semiconductor quantum well is strongly influenced by a highly reflecting interface, with the quantum well to interface spacing being less than the optical emission wavelength of the quantum well. An enhancement/inhibition ratio on the order of 10 is possible according to the present invention using a single reflector, and enhancement/inhibition ratios on the order of 1000 are possible when two reflectors are used in the quantum well light-emitting diode structures. In addition, according to the present invention, the gain, directionality, and efficiency of a vertical cavity surface-emitting laser can also be greatly improved. A method of making a device according to the present invention is also presented.

Abstract: This invention is a semiconductor vertical cavity surface emitting laser comprising a lasing cavity with an active layer, a bottom (rear) mirror and a top (front) mirror, and a front and rear electrodes for applying excitation current in direction substantially parallel to the direction of optical propagation. In accordance with this invention the front mirror comprises a thin, semitransparent metal layer which also acts as the front electrode. The metal layer is upon a highly doped layer forming a non-alloyed ohmic contact. The metal is selected from Ag and Al and is deposited in thickness ranging from 5 to 55 nm. The VCSEL is a semiconductor device wherein the semiconductor material is a III-V or II-VI compound semiconductor. For a VCSEL with GaAs active layer, the light output from the front metal mirror/electrode side yields a high external differential quantum efficiency as high as 54 percent. This is the highest quantum efficiency obtained in VCSEL structures.

Abstract: In a vertical cavity laser, such as an InP based vertical laser, the energy bandgap in the active region can be made equal to or larger than the bandgap in a semiconductor mirror stack by virtue of degenerate doping in the stack sufficient to suppress electronic band-to-band optical absorption. For example, the active region of an InP based laser can be lattice-matched GaInAs, GaInAsP, or a multiple quantum well structure composed of layers of InP and GaInAs--with the mirror stack composed of alternating layers of InP and degenerately doped n-type lattice-matched GaInAs or GaInAsP.

Abstract: An electrically pumped vertical cavity laser depends upon reflection as between an unaided DBR reflector on one side of the cavity and a metal-supplemented DBR reflector on the other. Placement of the shorter supplemented DBR on the p-conductivity type side of the cavity reduces the resistance of the electrical series pump path. Permitted use of an active region of a thickness of 1 .mu.m or less in the lasing direction results in low lasing threshold. The structural approach is of significance for laser integration in integrated circuits, whether electro-optic or all-optic.