Abstract: Apparatus and method for obtaining stable matching networks for plasma tools for use in the plasma processing industry. In an RF plasma apparatus, running at a matched condition for a transmission line and the plasma tool matching network such that the input impedance at the input to the transmission line is different than that of the output impedance of an RF generator and such that when the plasma density in the plasma tool decreases the input impedance will match the output impedance of the generator.

Abstract: Disclosed is a plasma dry processing apparatus for producing a plasma with a resonance zone including a chamber for plasma processing at least one workpiece, the workpiece situated at a first end of the chamber; an induction coil at a second end of the chamber, spaced from the workpiece, for providing a radio frequency induced electromagnetic magnetic field to generate a helicon plasma within the chamber; a plurality of magnetic dipoles contained within the material of the induction coil, the magnetic dipoles having their fields directed towards the interior of, and producing a well-confined plasma within, the chamber, wherein the fields are adjacent to the second end of the chamber and keep the plasma spaced from the second end of the chamber.

Abstract: A novel method and apparatus for achieving electrostatic deflection of high current ion beams within a scanning apparatus. In one embodiment, a pair of gates are provided, with one gate being oriented proximate each side of the deflection plates, and each gate being biased to a negative voltage of a sufficient amplitude to repel electrons which otherwise would be attracted to the positively-biased deflection plates to thereby protect the electron cloud from degradation, and maintain space charge neutralization of the ion beam. In another embodiment, means are provided to drive the deflection plates at negative voltages at all times and to maintain portions of the ground tube of the apparatus adjacent the deflection plates at a ground or negative level in order to avoid degradation of the electron sheath.