Abstract: A mixed mode RAM/ROM cell includes a volatile memory cell and an antifuse coupled to the cell. In an array of mixed mode memory cells, addressing circuitry is coupled to the volatile memory cells and programming circuitry is coupled to the antifuses. After an antifuse is programmed, the associated memory cell is transformed from a volatile memory to a non-volatile memory. Specifically, during normal operation, a standard supply voltage is provided to all antifuses. Thus, after a power down or power fluctuation, the programmed antifuses ensure subsequent configuration of their respective volatile memory cells.

Abstract: A central processing unit (10) has a cache memory system (24) associated therewith for interfacing with a main memory system (23). The cache memory system (24) includes a primary cache (26) comprised of SRAMS and a secondary cache (28) comprised of DRAM. The primary cache (26) has a faster access than the secondary cache (28). When it is determined that the requested data is stored in the primary cache (26) it is transferred immediately to the central processing unit (10). When it is determined that the data resides only in the secondary cache (28), the data is accessed therefrom and routed to the central processing unit (10) and simultaneously stored in the primary cache (26). If a hit occurs in the primary cache (26), it is accessed and output to a local data bus (32). If only the secondary cache (28) indicates a hit, data is accessed from the appropriate one of the arrays (80)-(86) and transferred through the primary cache ( 26) via transfer circuits (96), (98), (100) and (102) to the data bus (32).

Abstract: A method and apparatus is described for initiating a selected functional mode for a semiconductor memory circuit to determine the implementation of redundant elements in a semiconductor memory. The method for initiating the selected functional mode comprises applying an active state of at least a first of the operational signals to the memory circuit followed by applying an active state of a second of the operational signals to the memory circuit. The timing of the second operational signal relative to the first operational signal is not within the defined specification limits of the first and the second operational signals for conventional data transfer to and from the memory. An example of the selected functional mode is the activation of circuitry (62) which serves to apply a predetermined data state to a redundant column (63) which can be substituted to replace a defective primary column within a memory array.

Abstract: A dynamic RAM integrated circuit has improved resistance to soft errors caused by alpha particles by changing the trip-point voltage of the sense amplifier from a first value that provides resistance to bit line errors to a second, lower value that provides resistance to cell errors.