Patents by Inventor Dennis M. Hayden

Dennis M. Hayden has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 6582857
    Abstract: The current invention performs short pulse laser ablation of clear defect regions on a mask prior to patching the clear defect regions. The short-pulse laser ablation removes any residue that absorbs light. Thus, the ablation completely cleans the surface of the clear defect regions, meaning that any patches of the surface will better adhere to the surface of the mask. This is particularly important during those situations where a later etch of a conductive surface added to the mask creates a solvent because the etchant interacts with residue on the mask, and wherein the solvent attacks the patch material at the patch material's interface.
    Type: Grant
    Filed: March 16, 2000
    Date of Patent: June 24, 2003
    Assignee: International Business Machines Corporation
    Inventors: Philip S. Flanigan, Dennis M. Hayden, Michael S. Hibbs, Timothy E. Neary
  • Patent number: 6534225
    Abstract: The present invention provides various methods for eliminating printable alternating phase shift defects from an alternating phase shift mask without the need of using a trim mask. Specifically, unwanted printable defects are removed by employing methods which provide a gradual sloped region in the transparent or semi-transparent substrate which is formed in an area of the substrate opposite to that of the opaque image which is formed thereon.
    Type: Grant
    Filed: June 27, 2001
    Date of Patent: March 18, 2003
    Assignee: International Business Machines Corporation
    Inventors: Steven D. Flanders, Dennis M. Hayden, Timothy E. Neary
  • Patent number: 6515736
    Abstract: A reticle capturing system includes a reticle that defines a first recess extending into the reticle from a first edge of the reticle and a second recess extending into the reticle from a second edge of the reticle. The reticle capturing system also includes a first finger selectively extending into the first recess and a second finger selectively extending into the second recess. The first and second fingers may be tapered so that the reticle capturing system will be self centering. The reticle capturing system may also include a third recess defined by the reticle and a third finger selectively extending into a recess. A method for capturing a reticle includes providing a reticle that defines a recess at an edge of the reticle and inserting the finger into the recess. The method may further include inserting a second finger into a second recess.
    Type: Grant
    Filed: May 4, 2000
    Date of Patent: February 4, 2003
    Assignee: International Business Machines Corporation
    Inventors: Dennis M. Hayden, Timothy E. Neary
  • Publication number: 20030003371
    Abstract: The present invention provides various methods for eliminating printable alternating phase shift defects from an alternating phase shift mask without the need of using a trim mask. Specifically, unwanted printable defects are removed by employing methods which provide a gradual sloped region in the transparent or semi-transparent substrate which is formed in an area of the substrate opposite to that of the opaque image which is formed thereon.
    Type: Application
    Filed: June 27, 2001
    Publication date: January 2, 2003
    Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION
    Inventors: Steven D. Flanders, Dennis M. Hayden, Timothy E. Neary
  • Patent number: 6346352
    Abstract: The present invention discloses a method of controlling the precise removal of unwanted material from a light transmittable substrate for isolating and removing defects from a surface of the light transmittable substrate and for direct writing of a reticle or photomask, and the resultant reticle or photomask. The depth of ion implantation of a light absorbing material such as gallium, arsenic, boron, phosphorus, antimony or combinations thereof into the defect and/or the areas surrounding the defect on the light transmittable substrate controls the depth of material removed from the substrate. Unexpectedly, the use of laser ablation at pulses not greater than 10−5 seconds to remove the unwanted material provides precision removal while preventing heat damage to the substrate.
    Type: Grant
    Filed: February 25, 2000
    Date of Patent: February 12, 2002
    Assignee: International Business Machines Corporation
    Inventors: Dennis M. Hayden, Timothy E. Neary, John N. Ross
  • Patent number: 6190836
    Abstract: A method of repairing defects on masks includes the step of providing a coating on the mask to prevent damage to clear regions of the mask from laser ablation splatter, laser ablation caused quartz pitting, laser deposition staining, and FIB caused gallium staining. The coating is a metal, a polymer, or a carbon material. The coating is formed on clear regions of the mask as well as either over or under the light absorbing material of the mask. A coating comprising a thin copper layer significantly improves imaging with the ion beam while protecting clear regions of the mask from FIB stain. A coating formed of a photosensitive polymer is used to etch opaque defects. While wanted opaque regions adjacent an opaque defect are also etched in this etch step, these created clear defects are then repaired in a subsequent FIB deposition step while a copper coating protects adjacent clear regions from FIB stain.
    Type: Grant
    Filed: April 28, 2000
    Date of Patent: February 20, 2001
    Assignee: International Business Machines Corporation
    Inventors: Brian J. Grenon, Richard A. Haight, Dennis M. Hayden, Michael S. Hibbs, J. Peter Levin, Timothy E. Neary, Raymond E. Rochefort, Dennis A. Schmidt, Jacek G. Smolinski, Alfred Wagner
  • Patent number: 6165649
    Abstract: A method of repairing defects on masks includes the step of providing a coating on the mask to prevent damage to clear regions of the mask from laser ablation splatter, laser ablation caused quartz pitting, laser deposition staining, and FIB caused gallium staining. The coating is a metal, a polymer, or a carbon material. The coating is formed on clear regions of the mask as well as either over or under the light absorbing material of the mask. A coating comprising a thin copper layer significantly improves imaging with the ion beam while protecting clear regions of the mask from FIB stain. A coating formed of a photosensitive polymer is used to etch opaque defects. While wanted opaque regions adjacent an opaque defect are also etched in this etch step, these created clear defects are then repaired in a subsequent FIB deposition step while a copper coating protects adjacent clear regions from FIB stain.
    Type: Grant
    Filed: January 21, 1997
    Date of Patent: December 26, 2000
    Assignee: International Business Machines Corporation
    Inventors: Brian J. Grenon, Richard A. Haight, Dennis M. Hayden, Michael S. Hibbs, J. Peter Levin, Timothy E. Neary, Raymond E. Rochefort, Dennis A. Schmidt, Jacek G. Smolinski, Alfred Wagner
  • Patent number: 6156461
    Abstract: A method of repairing defects on masks includes the step of providing a coating on the mask to prevent damage to clear regions of the mask from laser ablation splatter, laser ablation caused quartz pitting, laser deposition staining, and FIB caused gallium staining. The coating is a metal, a polymer, or a carbon material. The coating is formed on clear regions of the mask as well as either over or under the light absorbing material of the mask. A coating comprising a thin copper layer significantly improves imaging with the ion beam while protecting clear regions of the mask from FIB stain. A coating formed of a photosensitive polymer is used to etch opaque defects. While wanted opaque regions adjacent an opaque defect are also etched in this etch step, these created clear defects are then repaired in a subsequent FIB deposition step while a copper coating protects adjacent clear regions from FIB stain.
    Type: Grant
    Filed: February 14, 2000
    Date of Patent: December 5, 2000
    Assignee: International Business Machines Corporation
    Inventors: Brian J. Grenon, Richard A. Haight, Dennis M. Hayden, Michael S. Hibbs, J. Peter Levin, Timothy E. Neary, Raymond E. Rochefort, Dennis A. Schmidt, Jacek G. Smolinski, Alfred Wagner
  • Patent number: 6090507
    Abstract: A method of repairing defects on masks includes the step of providing a coating on the mask to prevent damage to clear regions of the mask from laser ablation splatter, laser ablation caused quartz pitting, laser deposition staining, and FIB caused gallium staining. The coating is a metal, a polymer, or a carbon material. The coating is formed on clear regions of the mask as well as either over or under the light absorbing material of the mask. A coating comprising a thin copper layer significantly improves imaging with the ion beam while protecting clear regions of the mask from FIB stain. A coating formed of a photosensitive polymer is used to etch opaque defects. While wanted opaque regions adjacent an opaque defect are also etched in this etch step, these created clear defects are then repaired in a subsequent FIB deposition step while a copper coating protects adjacent clear regions from FIB stain.
    Type: Grant
    Filed: March 3, 1999
    Date of Patent: July 18, 2000
    Assignee: International Business Machines Corporation
    Inventors: Brian J. Grenon, Richard A. Haight, Dennis M. Hayden, Michael S. Hibbs, J. Peter Levin, Timothy E. Neary, Raymond E. Rochefort, Dennis A. Schmidt, Jacek G. Smolinski, Alfred Wagner